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浏览/检索结果: 共16条，第1-10条 帮助 限定条件 专题：上海微系统与信息技术研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 The optical property of tensile-strained n-type doped Ge 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2012, 卷号: 61, 期号: 3, 页码: 36202 Huang, SH; Li, C; Chen, CZ; Yuan-Yu, Z; Lai, HK; Chen, SY 收藏  |  浏览/下载：11/0  |  提交时间：2013/04/17 strain  n-type doped germanium  internal quantum efficiency  optical gain   The structure and electrical properties of HfTaON high-k films prepared by DIBSD 期刊论文  OAI收割 APPLIED SURFACE SCIENCE, 2012, 卷号: 258, 期号: 7, 页码: 2953-2958 Yu, T; Jin, CG; Yang, XM; Dong, YJ; Zhang, HY; Zhuge, LJ; Wu, XM; Wu, ZF 收藏  |  浏览/下载：7/0  |  提交时间：2013/04/17 HfTaON  XPS  TEM  FTIR  Crystallization temperature  Electrical characteristic   Improved photovoltaic performance of InGaN single junction solar cells by using n-on-p type device structure 期刊论文  OAI收割 JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2010, 卷号: 12, 期号: 7, 页码: 1452-1456 Song, M; Wu, Z; Fang, Y; Xiang, R; Sun, Y; Wang, H; Yu, C; Xiong, H; Dai, J; Chen, C 收藏  |  浏览/下载：14/0  |  提交时间：2012/03/24 IN1-XGAXN ALLOYS  HETEROSTRUCTURES  POLARIZATION  GAN   Improved photovoltaic performance of InGaN single junction solar cells by using n-on-p type device structure 期刊论文  OAI收割 JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2010, 卷号: 12, 期号: 7, 页码: 1452-1456 Song, M; Wu, Z; Fang, Y; Xiang, R; Sun, Y; Wang, H; Yu, C; Xiong, H; Dai, J; Chen, C 收藏  |  浏览/下载：11/0  |  提交时间：2013/05/10 Materials Science  Physics  Multidisciplinary  Optics  Applied   Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication 期刊论文  OAI收割 NANOTECHNOLOGY, 2008, 卷号: 19, 期号: 17, 页码: 175307-175307 Wang, HQ; Jin, ZH; Zheng, YM; Ma, HL; Li, T; Wang, YL 收藏  |  浏览/下载：8/0  |  提交时间：2011/12/17 Macropore formation without illumination on low doped n-type silicon 期刊论文  OAI收割 JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 卷号: 154, 期号: 3, 页码: D175-D181 Bao, XQ; Jiao, JW; Wang, YL; Na, KW; Choi, H 收藏  |  浏览/下载：7/0  |  提交时间：2011/12/17 P-TYPE SILICON  POROUS SILICON  FORMATION MECHANISM  ANODIC-DISSOLUTION  STABILITY ANALYSIS  SI  MORPHOLOGY  PHYSICS   A high-quality SOI structure fabricated by low-temperature technology with B+/H+ co-implantation and plasma bonding 期刊论文  OAI收割 SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 卷号: 21, 期号: 7, 页码: 959-963 Ma, XB; Liu, WL; Chen, C; Zhan, D; Song, ZT; Feng, SL 收藏  |  浏览/下载：11/0  |  提交时间：2012/03/24 N-TYPE SILICON  BORON  DEFECT   Carrier capture cross-section of nonradiative recombination centres introduced by proton implantation in GaAs 期刊论文  OAI收割 SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 卷号: 19, 期号: 11, 页码: 1325-1328 Guo, XG; Lu, W; Chen, XS; Cao, JC 收藏  |  浏览/下载：10/0  |  提交时间：2011/12/17 TOTAL-ENERGY CALCULATIONS  WAVE BASIS-SET  N-TYPE GAAS  THERMAL-STABILITY  LAYERS  SEMICONDUCTORS  IRRADIATION  DEFECTS   Silicon behavior in GaN grown by radiofrequency plasma molecular beam epitaxy 期刊论文  OAI收割 THIN SOLID FILMS, 2001, 卷号: 401, 期号: 1-2, 页码: 279-283 Li, W; Li, AZ 收藏  |  浏览/下载：17/0  |  提交时间：2012/03/24 SI-DOPED GAN  CHEMICAL-VAPOR-DEPOSITION  PHOTOLUMINESCENCE SPECTROSCOPY  PHOTO-LUMINESCENCE  N-TYPE  GAAS  FILMS  TRANSITIONS  NITRIDE  ENERGY   Investigation of damage behaviour and isolation effect of n-type 6H-SiC by implantation of oxygen 期刊论文  OAI收割 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2000, 卷号: 33, 期号: 12, 页码: 1551-1555 Wang, LW; Huang, JP; Duo, XZ; Song, ZT; Lin, CL; Zetterling, CM; Ostling, M 收藏  |  浏览/下载：9/0  |  提交时间：2012/03/24 ENHANCED THERMAL-OXIDATION  ION-IMPLANTATION  SILICON-CARBIDE  AMORPHIZATION  LAYERS