机构

• 半导体研究所 [6]

采集方式

• OAI收割 [6]

内容类型

• 会议论文 [6]

发表日期

• 2006 [6]

学科主题

• 半导体物理 [6]

筛选

浏览/检索结果: 共6条，第1-6条 帮助 限定条件 发表日期：2006    内容类型：会议论文    学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers 会议论文  OAI收割 2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004 Fang, ZD (Fang, Zhidan); Gong, M (Gong, Meng); Miao, ZH (Miao, Zhenhua); Niu, ZC (Niu, Zhichuan) 收藏  |  浏览/下载：113/32  |  提交时间：2010/03/29 quantum dots  photoluminescence  combination layer  1.3 MU-M  LASERS  INALAS   Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors 会议论文  OAI收割 2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004 Zeng, YX (Zeng, Yuxin); Liu, W (Liu, Wei); Yang, FH (Yang, Fuhua); Xu, P (Xu, Ping); Tan, PH (Tan, Pingheng); Zheng, HZ (Zheng, Houzhi); Zeng, YP (Zeng, Yiping); Xing, YJ (Xing, Yingjie); Yu, DP (Yu, Dapeng) 收藏  |  浏览/下载：98/31  |  提交时间：2010/03/29 InAs quantum dot  photoluminescence  modulation-doped  field effect transistor  MU-M  CAPPING LAYER   1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy 会议论文  OAI收割 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Niu, ZC; Zhang, SY; Ni, HQ; Wu, DH; He, ZH; Sun, Z; Han, Q; Wu, RG 收藏  |  浏览/下载：223/60  |  提交时间：2010/03/29 IMPROVED LUMINESCENCE EFFICIENCY  TEMPERATURE  PHOTOLUMINESCENCE  NITROGEN  ORIGIN  DIODES   Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy 会议论文  OAI收割 3rd international conference on materials for advanced technologies/9th international conference on advanced materials, singapore, singapore, jul 03-08, 2005 Jiang, DS; Qu, YH; Ni, HQ; Wu, DH; Xu, YQ; Niu, ZC 收藏  |  浏览/下载：110/24  |  提交时间：2010/03/29 molecular beam epitaxy   Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots 会议论文  OAI收割 3rd asian conference on chemical vapor deposition, taipei, taiwan, nov 12-14, 2004 Kong LM; Cai JF; Wu ZY; Gong Z; Niu ZC; Feng ZC 收藏  |  浏览/下载：166/29  |  提交时间：2010/03/29 time-resolved photoluminescence   Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z 会议论文  OAI收割 conference on ultrafast phenomena in semiconductors and nanostructure materials x, san jose, ca, jan 23-25, 2006 Sun, Z (Sun, Z.); Xu, ZY (Xu, Z. Y.); Yang, XD (Yang, X. D.); Sun, BQ (Sun, B. Q.); Ji, Y (Ji, Y.); Zhang, SY (Zhang, S. Y.); Ni, HQ (Ni, H. Q.); Niu, ZC (Niu, Z. C.) 收藏  |  浏览/下载：182/36  |  提交时间：2010/03/29 GaInNAs/GaAs quantum wells  optical properties  nonradiative recombination effect  time-resolved photoluminescence  PL decay dynamics  PL thermal quenching  MOLECULAR-BEAM EPITAXY  GAASN ALLOYS  EXCITATION