中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [36]
采集方式
OAI收割 [36]
内容类型
期刊论文 [29]
会议论文 [7]
发表日期
2006 [36]
学科主题
半导体材料 [36]
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共36条,第1-10条
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发表日期:2006
学科主题:半导体材料
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Correlation between optical and electrical properties in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates
期刊论文
OAI收割
journal of applied physics, 2006, 卷号: 100, 期号: 3, 页码: art.no.033705
Cui LJ (Cui L. J.)
;
Zeng YP (Zeng Y. P.)
;
Wang BQ (Wang B. Q.)
;
Zhu ZP (Zhu Z. P.)
;
Guo SL (Guo S. L.)
;
Chu JH (Chu J. H.)
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2010/04/11
QUANTUM-WELL STRUCTURES
PHOTOLUMINESCENCE SPECTRA
HEMTS
Evolution of wetting layer of InAs/GaAs quantum dots studied by reflectance difference spectroscopy
期刊论文
OAI收割
applied physics letters, 2006, 卷号: 88, 期号: 7, 页码: art.no.071903
作者:
Jin P
收藏
  |  
浏览/下载:547/12
  |  
提交时间:2010/04/11
GROWTH
INAS
GAAS
SURFACES
Porous ZnAl2O4 spinel nanorods doped with Eu3+: synthesis and photoluminescence
期刊论文
OAI收割
nanotechnology, 2006, 卷号: 17, 期号: 12, 页码: 2982-2987
Cheng BC
;
Qu SC
;
Zhou HY
;
Wang ZG
收藏
  |  
浏览/下载:118/0
  |  
提交时间:2010/04/11
SPRAY-PYROLYSIS TECHNIQUE
SOL-GEL PROCESS
ZINC ALUMINATE
OPTICAL-PROPERTIES
CATHODOLUMINESCENT CHARACTERISTICS
HYDROTHERMAL SYNTHESIS
NANOCRYSTALLINE
COMBUSTION
SPECTRA
METHANE
High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001)
期刊论文
OAI收割
applied physics letters, 2006, 卷号: 88, 期号: 12, 页码: art.no.123104
作者:
Ye XL
;
Jin P
收藏
  |  
浏览/下载:76/0
  |  
提交时间:2010/04/11
NANOWIRES
THRESHOLD
WELLS
INP
Low -temperature preparation of ZnO films on Si substrates by MOCVD
期刊论文
OAI收割
功能材料与器件学报, 2006, 卷号: 12, 期号: 1, 页码: 63-66
作者:
Wang Jun
;
Wang Jun
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2010/11/23
Research on the band-gap of InN grown on siticon substrates
会议论文
OAI收割
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Xiao, HL
;
Wang, XL
;
Wang, JX
;
Zhang, NH
;
Liu, HX
;
Zeng, YP
;
Li, JM
收藏
  |  
浏览/下载:100/15
  |  
提交时间:2010/03/29
MOLECULAR-BEAM EPITAXY
WURTZITE INN
NITRIDE
ABSORPTION
ALLOYS
FILMS
Characteristic of rapid thermal annealing on GaIn(N)(Sb)As/GaAs quantum well grown by molecular-beam epitaxy
期刊论文
OAI收割
journal of applied physics, 2006, 卷号: 99, 期号: 3, 页码: art.no.034903
作者:
Xu YQ
收藏
  |  
浏览/下载:121/0
  |  
提交时间:2010/04/11
IMPROVED LUMINESCENCE EFFICIENCY
OPTICAL-PROPERTIES
LASERS
NITROGEN
ORIGIN
Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates
期刊论文
OAI收割
nanotechnology, 2006, 卷号: 17, 期号: 5, 页码: 1251-1254
作者:
Wei HY
收藏
  |  
浏览/下载:59/0
  |  
提交时间:2010/04/11
OPTICAL-PROPERTIES
RAMAN-SCATTERING
EPILAYERS
LUMINESCENCE
ALINGAN
PHONON
LAYERS
FILMS
ALN
GAN
Effect of substrate temperature on the growth and photoluminescence properties of vertically aligned ZnO nanostructures
期刊论文
OAI收割
journal of crystal growth, 2006, 卷号: 292, 期号: 1, 页码: 19-25
Li C (Li Chun)
;
Fang GJ (Fang Guojia)
;
Fu Q (Fu Qiang)
;
Su FH (Su Fuhai)
;
Li GH (Li Guohua)
;
Wu XG (Wu Xiaoguang)
;
Zhao XZ (Zhao Xingzhong)
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2010/04/11
nanostructure
vapor phase transport
ZnO
semiconductor materials
PHYSICAL VAPOR-DEPOSITION
OPTICAL-PROPERTIES
THERMAL EVAPORATION
FIELD-EMISSION
NANOWIRES
NANORODS
MECHANISM
ARRAYS
Selective growth of InAs islands on patterned GaAs (100) substrate
期刊论文
OAI收割
superlattices and microstructures, 2006, 卷号: 39, 期号: 5, 页码: 446-453
作者:
Xu B
;
Jin P
收藏
  |  
浏览/下载:92/0
  |  
提交时间:2010/04/11
patterned substrate
molecular beam epitaxy
quantum dots
InAs
GaAs
InGaAs
ASSEMBLED QUANTUM DOTS
MOLECULAR-BEAM EPITAXY
FABRICATION