中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [13]
采集方式
OAI收割 [13]
内容类型
期刊论文 [13]
发表日期
2011 [13]
学科主题
光电子学 [13]
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共13条,第1-10条
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发表日期:2011
学科主题:光电子学
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Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As
期刊论文
OAI收割
ieee international conference on group iv photonics gfp, 2011, 页码: 314-316
Hu, Weixuan
;
Cheng, Buwen
;
Xue, Chunlai
;
Su, Shaojian
;
Liu, Zhi
;
Li, Yaming
;
Wang, Qiming
收藏
  |  
浏览/下载:49/0
  |  
提交时间:2012/06/13
Epitaxial growth
Germanium
Indium
Photonics
Semiconducting silicon compounds
Silicon
Growth of high quality Ge epitaxial films on Si substrate by low temperature buffer technique
期刊论文
OAI收割
guangdianzi jiguang/journal of optoelectronics laser, 2011, 卷号: 22, 期号: 7, 页码: 1030-1033
Zhou, Zhi-Wen
;
He, Jing-Kai
;
Li, Cheng
;
Yu, Jin-Zhong
收藏
  |  
浏览/下载:46/0
  |  
提交时间:2012/06/13
Atomic force microscopy
Atomic spectroscopy
Chemical vapor deposition
Diffraction
Epitaxial growth
Germanium
Raman spectroscopy
Semiconducting silicon compounds
Substrates
Surface morphology
Ultrahigh vacuum
X ray diffraction
High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD
期刊论文
OAI收割
semiconductor science and technology, 2011, 卷号: 26, 期号: 5, 页码: article no.55013
Wu CM
;
Zhang BP
;
Shang JZ
;
Cai LE
;
Zhang JY
;
Yu JZ
;
Wang QM
收藏
  |  
浏览/下载:61/3
  |  
提交时间:2011/07/05
CHEMICAL-VAPOR-DEPOSITION
MOLECULAR-BEAM EPITAXY
PHASE EPITAXY
MIRRORS
GAN
WAVELENGTHS
Flattening of low temperature epitaxial Ge1-xSnx/Ge/Si(100) alloys via mass transport during post-growth annealing
期刊论文
OAI收割
applied surface science, 2011, 卷号: 257, 期号: 9, 页码: 4468-4471
Wang W
;
Su SJ
;
Zheng J
;
Zhang GZ
;
Xue CL
;
Zuo YH
;
Cheng BW
;
Wang QM
收藏
  |  
浏览/下载:97/7
  |  
提交时间:2011/07/05
Germanium tin alloys
Germanium buffer
Surface morphology evolution
Mass transport
SURFACE
GROWTH
EVOLUTION
DECAY
Strained and strain-relaxed epitaxial Ge1-xSnx alloys on Si(100) substrates
期刊论文
OAI收割
chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: art. no. 068103
作者:
Su SJ
收藏
  |  
浏览/下载:93/5
  |  
提交时间:2011/07/07
GeSn alloys
strained
strain-relaxed
molecular beam epitaxy
Strained and strain-relaxed epitaxial Ge(1-x)Sn(x) alloys on Si(100) substrates
期刊论文
OAI收割
chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: 68103
Wang, W
;
Su, SJ
;
Zheng, J
;
Zhang, GZ
;
Zuo, YH
;
Cheng, BW
;
Wang, QM
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2012/02/06
GeSn alloys
strained
strain-relaxed
molecular beam epitaxy
Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates
期刊论文
OAI收割
journal of crystal growth, 2011, 卷号: 317, 期号: 1, 页码: 43-46
Su SJ
;
Wang W
;
Cheng BW
;
Zhang GZ
;
Hu WX
;
Xue CL
;
Zuo YH
;
Wang QM
收藏
  |  
浏览/下载:71/4
  |  
提交时间:2011/07/05
Thermal stability
Molecular beam epitaxy
Germanium tin alloys
Germanium
MOLECULAR-BEAM EPITAXY
LOW-TEMPERATURE
SEMICONDUCTORS
GE(001)2X1
The contributions of composition and strain to the phonon shift in Ge1-xSnx alloys
期刊论文
OAI收割
solid state communications, 2011, 卷号: 151, 期号: 8, 页码: 647-650
Su SJ
;
Wang W
;
Cheng BW
;
Hu WX
;
Zhang GZ
;
Xue CL
;
Zuo YH
;
Wang QM
收藏
  |  
浏览/下载:64/3
  |  
提交时间:2011/07/05
Semiconductors
Raman scattering
MOLECULAR-BEAM EPITAXY
RAMAN FREQUENCIES
SEMICONDUCTORS
GE(001)2X1
SILICON
SCATTERING
GROWTH
A practical route towards fabricating GaN nanowire arrays
期刊论文
OAI收割
crystengcomm, 2011, 卷号: 13, 期号: 19, 页码: 5929-5935
Liu, JQ
;
Huang, J
;
Gong, XJ
;
Wang, JF
;
Xu, K
;
Qiu, YX
;
Cai, DM
;
Zhou, TF
;
Ren, GQ
;
Yang, H
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2012/02/06
LIGHT-EMITTING-DIODES
EPITAXIAL LATERAL OVERGROWTH
CHEMICAL-VAPOR-DEPOSITION
WELL NANOROD ARRAYS
ULTRAVIOLET-LIGHT
GROWTH
NANOGENERATORS
DISLOCATIONS
BRIGHTNESS
LAYERS
Analysis of Modified Williamson-Hall Plots on GaN Layers
期刊论文
OAI收割
chinese physics letters, 2011, 卷号: 28, 期号: 1, 页码: article no.16101
Liu JQ
;
Qiu YX
;
Wang JF
;
Xu K
;
Yang H
收藏
  |  
浏览/下载:36/3
  |  
提交时间:2011/07/05
X-RAY-DIFFRACTION
THIN-FILMS
GROWTH