中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [17]
采集方式
OAI收割 [17]
内容类型
期刊论文 [16]
学位论文 [1]
发表日期
2011 [17]
学科主题
半导体材料 [17]
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共17条,第1-10条
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发表日期:2011
学科主题:半导体材料
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Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures
期刊论文
OAI收割
chinese physics letters, 2011, 卷号: 28, 期号: 2, 页码: article no.27801
作者:
Xu B
收藏
  |  
浏览/下载:51/3
  |  
提交时间:2011/07/05
CONTINUOUS-WAVE OPERATION
EMISSION
LASERS
WAVELENGTH
EXCITONS
ENERGY
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers
期刊论文
OAI收割
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者:
Jia CH
;
Song HP
收藏
  |  
浏览/下载:118/2
  |  
提交时间:2011/07/05
Anisotropy
Crystal morphology
Metalorganic chemical vapor deposition
a-Plane InN
INDIUM NITRIDE
MOVPE GROWTH
CUBIC INN
SAPPHIRE
GAN
MBE
Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy
期刊论文
OAI收割
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75010
作者:
Yang T
;
Yang XG
;
Wang KF
收藏
  |  
浏览/下载:63/2
  |  
提交时间:2011/07/05
HIGH-DENSITY
TEMPERATURE-DEPENDENCE
SELF-FORMATION
LAYERS
WELL
MBE
Experimental and theoretical study for InAs quantum dashes-in-a-step-well structure on (001)-oriented InP substrate
期刊论文
OAI收割
journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: article no.84345
Kong JX
;
Zhu QS
;
Xu B
;
Wang ZG
收藏
  |  
浏览/下载:39/3
  |  
提交时间:2011/07/05
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots
期刊论文
OAI收割
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者:
Xu B
;
Zhou GY
;
Ye XL
;
Zhang HY
收藏
  |  
浏览/下载:53/5
  |  
提交时间:2011/07/05
SELF-ORGANIZED ISLANDS
MOLECULAR-BEAM-EPITAXY
OPTICAL-PROPERTIES
SURFACES
EMISSION
DENSITY
SIZE
Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer
期刊论文
OAI收割
journal of applied physics, 2011, 卷号: 109, 期号: 6, 页码: article no.64320
作者:
Yang T
收藏
  |  
浏览/下载:52/5
  |  
提交时间:2011/07/05
PHOTOLUMINESCENCE
EMISSION
INALAS
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD
期刊论文
OAI收割
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42
作者:
Song HP
;
Shi K
;
Sang L
;
Wei HY
收藏
  |  
浏览/下载:57/3
  |  
提交时间:2011/07/05
Metal organic chemical vapor deposition
Sapphire
Zinc compounds
Semiconducting II-VI materials
VAPOR-PHASE EPITAXY
OPTICAL-PROPERTIES
ZNO NANORODS
RAMAN-SCATTERING
M-PLANE
FILMS
PHOTOLUMINESCENCE
DEPOSITION
NANOWIRES
FIELDS
Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment
期刊论文
OAI收割
journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: article no.83501
作者:
Zhou GY
;
Zhang HY
;
Xu B
;
Ye XL
收藏
  |  
浏览/下载:67/4
  |  
提交时间:2011/07/05
INAS ISLANDS
MU-M
ESCAPE
GAAS
GAAS(100)
SUBSTRATE
VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy
期刊论文
OAI收割
journal of crystal growth, 2011, 卷号: 329, 期号: 1, 页码: 40548
Zhao J
;
Zeng YP
;
Yang QM
;
Li YY
;
Cui LJ
;
Liu C
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2011/09/14
ZINC BLENDE CDSE
THIN-FILMS
OPTICAL-PROPERTIES
DEPOSITION
ZNSE
Comparison of as-grown and annealed GaN/InGaN:Mg samples
期刊论文
OAI收割
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 34, 页码: 345101
Deng QW
;
Wang XL
;
Xiao HL
;
Wang CM
;
Yin HB
;
Chen H
;
Lin DF
;
Jiang LJ
;
Feng C
;
Li JM
;
Wang ZG
;
Hou X
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2012/01/06
LIGHT-EMITTING-DIODES
VAPOR-PHASE EPITAXY
BAND-GAP
MG
PHOTOLUMINESCENCE
INGAN
DEPENDENCE
STRAIN
ENERGY
INN