中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 2011 [17]
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  • 半导体材料 [17]
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Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures 期刊论文  OAI收割
chinese physics letters, 2011, 卷号: 28, 期号: 2, 页码: article no.27801
作者:  
Xu B
收藏  |  浏览/下载:51/3  |  提交时间:2011/07/05
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文  OAI收割
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者:  
Jia CH;  Song HP
收藏  |  浏览/下载:118/2  |  提交时间:2011/07/05
Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy 期刊论文  OAI收割
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75010
作者:  
Yang T;  Yang XG;  Wang KF
收藏  |  浏览/下载:63/2  |  提交时间:2011/07/05
Experimental and theoretical study for InAs quantum dashes-in-a-step-well structure on (001)-oriented InP substrate 期刊论文  OAI收割
journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: article no.84345
Kong JX; Zhu QS; Xu B; Wang ZG
收藏  |  浏览/下载:39/3  |  提交时间:2011/07/05
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文  OAI收割
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者:  
Xu B;  Zhou GY;  Ye XL;  Zhang HY
收藏  |  浏览/下载:53/5  |  提交时间:2011/07/05
Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer 期刊论文  OAI收割
journal of applied physics, 2011, 卷号: 109, 期号: 6, 页码: article no.64320
作者:  
Yang T
收藏  |  浏览/下载:52/5  |  提交时间:2011/07/05
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD 期刊论文  OAI收割
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42
作者:  
Song HP;  Shi K;  Sang L;  Wei HY
收藏  |  浏览/下载:57/3  |  提交时间:2011/07/05
Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment 期刊论文  OAI收割
journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: article no.83501
作者:  
Zhou GY;  Zhang HY;  Xu B;  Ye XL
收藏  |  浏览/下载:67/4  |  提交时间:2011/07/05
VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy 期刊论文  OAI收割
journal of crystal growth, 2011, 卷号: 329, 期号: 1, 页码: 40548
Zhao J; Zeng YP; Yang QM; Li YY; Cui LJ; Liu C
收藏  |  浏览/下载:8/0  |  提交时间:2011/09/14
Comparison of as-grown and annealed GaN/InGaN:Mg samples 期刊论文  OAI收割
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 34, 页码: 345101
Deng QW; Wang XL; Xiao HL; Wang CM; Yin HB; Chen H; Lin DF; Jiang LJ; Feng C; Li JM; Wang ZG; Hou X
收藏  |  浏览/下载:18/0  |  提交时间:2012/01/06