机构

• 半导体研究所 [22]

采集方式

• OAI收割 [22]

内容类型

• 会议论文 [22]

发表日期

• 2008 [1]
• 2007 [1]
• 2006 [3]
• 2005 [1]
• 2004 [3]
• 2003 [3]
• 更多

学科主题

• 半导体材料 [22]

筛选

浏览/检索结果: 共22条，第1-10条 帮助 限定条件 学科主题：半导体材料    内容类型：会议论文     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 High epitaxial growth rate of 4H-SiC using TCS as silicon precursor 会议论文  OAI收割 9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008 Ji, G; Sun, GS; Ning, J; Liu, XF; Zhao, YM; Wang, L; Zhao, WS; Zeng, YP 收藏  |  浏览/下载：34/0  |  提交时间：2010/03/09 Micro-raman investigation of defects in a 4H-SiC homoepilayer 会议论文  OAI收割 6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006 Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Li, JM (Li, J. M.); Zhao, YM (Zhao, Y. M.); Li, JY (Li, J. Y.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Luo, MC (Luo, M. C.); Zeng, YP (Zeng, Y. P.) 收藏  |  浏览/下载：162/28  |  提交时间：2010/03/29 micro-raman  4H-SiC  defects  3C-inclusions  triangle-shaped inclusion  EPITAXIAL LAYERS  SILICON-CARBIDE   Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文  OAI收割 international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005 Sun, GS (Sun, Guosheng); Ning, J (Ning, Jin); Gong, QC (Gong, Quancheng); Gao, X (Gao, Xin); Wang, L (Wang, Lei); Liu, XF (Liu, Xingfang); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin) 收藏  |  浏览/下载：100/29  |  提交时间：2010/03/29 homoepitaxial growth  low-pressure hot-wall CVD  structural and optical characteristics  intentional doping  Schottky barrier diodes   Raman scattering study on vibrational modes in Ga1-xMnxN prepared by Mn-ion implantation 会议论文  OAI收割 11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005 Islam MR; Chen NF; Yamada M 收藏  |  浏览/下载：126/8  |  提交时间：2010/03/29 Raman scattering   Light-induced changes in diphasic nanocrystalline silicon films and solar cells 会议论文  OAI收割 21st international conference on amorphous and nanocrystalline semiconductors, lisbon, portugal, sep 04-09, 2005 Hao, HY (Hao, Huiying); Liao, XB (Liao, Xianbo); Zeng, XB (Zeng, Xiangbo); Diao, HW (Diao, Hongwei); Xu, Y (Xu, Ying); Kong, GL (Kong, Guanglin) 收藏  |  浏览/下载：243/53  |  提交时间：2010/03/29 silicon   Photoluminescence and Raman scattering correlated study of boron-doped silicon nanowires 会议论文  OAI收割 icmat symposium on science and technologies of nanomaterials, singapore, singapore, dec 07-12, 2003 Zeng, XB; Liao, XB; Dai, ST; Wang, B; Xu, YY; Xiang, XB; Hu, ZH; Diao, HW; Kong, GL 收藏  |  浏览/下载：203/49  |  提交时间：2010/03/29 chemical vapor deposition processes  nanomaterials  semiconducting silicon  VISIBLE PHOTOLUMINESCENCE  POROUS SILICON  AMORPHOUS-SILICON  SI  SPECTROSCOPY  FILMS  NANOSTRUCTURES  CONFINEMENT  GROWTH   Raman scattering study on diluted magnetic semiconductor Ga1-xMnxAs prepared by Mn-ion implantation 会议论文  OAI收割 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 Islam MR; Chen NF; Yamada M 收藏  |  浏览/下载：130/33  |  提交时间：2010/03/29 Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy 会议论文  OAI收割 10th international conference on defects - recognition, imaging and physics in semiconductors (drip 10), batz sur mer, france, sep 29-oct 02, 2003 作者:  Ye XL;  Xu B 收藏  |  浏览/下载：11/0  |  提交时间：2010/10/29 SHORT-PERIOD SUPERLATTICES  RAMAN-SCATTERING  QUANTUM-WELLS  GROWTH  ROUGHNESS  SEGREGATION  ALAS/GAAS  ALAS  GAAS   The diphasic nc-Si/a-Si : H thin film with improved medium-range order 会议论文  OAI收割 20th international conference on amorphous and microcrystalline semiconductors, campos do jordao, brazil, aug 25-29, 2003 Zhang S; Liao X; Xu Y; Martins R; Fortunato E; Kong G 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 AMORPHOUS-SILICON FILMS  SCATTERING  ABSORPTION  DENSITIES  HYDROGEN   High-mobility Ga-polarity GaN achieved by NH3-MBE 会议论文  OAI收割 symposium on gan and related alloys held at the 2002 mrs fall meeting, boston, ma, dec 02-06, 2002 Wang JX; Wang XL; Sun DZ; Li JM; Zeng YP; Hu GX; Liu HX; Lin LY 收藏  |  浏览/下载：31/0  |  提交时间：2010/10/29 MOLECULAR-BEAM EPITAXY  ION-SCATTERING SPECTROSCOPY  LATTICE POLARITY  SINGLE-CRYSTALS  FILMS  POLARIZATION  GAN(0001)  SURFACES  GROWTH  DIODES