机构

• 高能物理研究所 [12]

采集方式

• OAI收割 [12]

内容类型

• 期刊论文 [12]

发表日期

• 2014 [1]
• 2011 [1]
• 2010 [2]
• 2009 [1]
• 2007 [1]
• 2005 [2]
• 更多

学科主题

• Physics [12]

筛选

浏览/检索结果: 共12条，第1-10条 帮助 限定条件 学科主题：Physics    专题：高能物理研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Mid-gap photoluminescence and magnetic properties of GaMnN films grown by metal-organic chemical vapor deposition 期刊论文  OAI收割 CHINESE PHYSICS B, 2014, 卷号: 23, 期号: 10, 页码: 107803 作者:  Xing HY(邢海英);  Xing, HY;  崔明启;Xu, ZC;  Cui, MQ;  Xie, YX 收藏  |  浏览/下载：16/0  |  提交时间：2016/04/08 GaMnN  photoluminescence  magnetism  metal-organic chemical vapor deposition   Influence of ultrathin amorphous silicon layers on the nucleation of microcrystalline silicon films under hydrogen plasma treatment 期刊论文  OAI收割 APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 4, 页码: 41902 作者:  Zuo, ZW;  Guan, WT;  Wang, Y;  Lu, J;  Wang, JZ 收藏  |  浏览/下载：13/0  |  提交时间：2016/06/29 Different origins of the yellow luminescence in as-grown high-resistance GaN and unintentional-doped GaN films 期刊论文  OAI收割 JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 107, 期号: 2, 页码: 23528 作者:  Xu, FJ;  Shen, B;  Lu, L;  Miao, ZL;  Song, J 收藏  |  浏览/下载：22/0  |  提交时间：2016/06/29 gallium compounds  III-V semiconductors  MOCVD  photoluminescence  positron annihilation  vacancies (crystal)  wide band gap semiconductors   Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films 期刊论文  OAI收割 APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 15, 页码: 151904 作者:  Yang, AL;  Song, HP;  Liang, DC;  Wei, HY;  Liu, XL 收藏  |  浏览/下载：42/0  |  提交时间：2016/06/29 alloying  annealing  electrical conductivity  excitons  II-VI semiconductors  magnesium compounds  MOCVD coatings  photoluminescence  positron annihilation  semiconductor thin films  vacancies (crystal)  wide band gap semiconductors  zinc compounds   Positron annihilation in (Ga, Mn)N: A study of vacancy-type defects 期刊论文  OAI收割 APPLIED PHYSICS LETTERS, 2009, 卷号: 94, 期号: 15, 页码: 151907 作者:  Yang, XL;  Zhu, WX;  Wang, CD;  Fang, H;  Yu, TJ 收藏  |  浏览/下载：25/0  |  提交时间：2016/06/29 doping profiles  Doppler broadening  ferromagnetic materials  gallium compounds  III-V semiconductors  magnetic thin films  manganese compounds  MOCVD  positron annihilation  semiconductor doping  semiconductor thin films  semimagnetic semiconductors  vacancies (crystal)  wide band gap semiconductors   Studies on surface roughness and growth mechanisms of microcrystalline silicon films by grazing incidence X-ray reflectivity 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2007, 卷号: 56, 期号: 4, 页码: 2422-2427 作者:  Zhou, BQ;  Liu, FZ;  Zhu, MF;  Zhou, YQ;  Wu, ZH 收藏  |  浏览/下载：17/0  |  提交时间：2016/06/29 grazing incidence X-ray reflectivity  microcrystalline silicon film  surface roughness  growth mechanism   The microstructure of hydrogenated microcrystalline silicon thin films studied by small-angle x-ray scattering 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2005, 卷号: 54, 期号: 5, 页码: 2172-2175 作者:  Zhou, BQ;  Liu, FZ;  Zhu, MF;  Gu, JH;  Zhou, YQ 收藏  |  浏览/下载：22/0  |  提交时间：2016/06/29 hydrogenated microcrystalline silicon thin film  microstructure  micro-voids  small-angle x-ray scattering   Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation 期刊论文  OAI收割 HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION, 2005, 卷号: 29, 页码: #REF! 作者:  Chen, J 收藏  |  浏览/下载：14/0  |  提交时间：2016/04/11 GaN  metalorganic chemical vapor deposition (MOCVD)  epitaxy lateral overgrowth  stacking faults  synchrotron radiation X-ray diffraction (XRD)  pole figure   Influence of CO2 reforming of CH4 reaction performance by adding vapor on Ni/CeO2-ZrO2-Al2O3 catalyst 期刊论文  OAI收割 CHINESE JOURNAL OF CHEMICAL PHYSICS, 2004, 卷号: 17, 期号: 1, 页码: #REF! 作者:  Li, CL;  Fu, YL;  Ming, M;  Bian, GZ;  Xie, YN 收藏  |  浏览/下载：20/0  |  提交时间：2016/04/12 CO2  reforming of CH4 reaction  steam addition  Ni/CeO2-ZrO2-Al2O3 catalyst  XAFS  coke deposit   Microstructures and strain relaxation in modulation-doped AlxGa1-xN/GaN heterostructures 期刊论文  OAI收割 INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2004, 卷号: 18, 期号: 7, 页码: 989-998 作者:  Tan, WS;  Shen, B;  Sha, H;  Cai, HL;  Wu, XS 收藏  |  浏览/下载：15/0  |  提交时间：2016/06/29 high resolution X-ray diffraction  metal organic chemical vapor deposition  reciprocal space mapping  semiconducting III-V nitride  strain relaxation  relaxation line model