机构

• 半导体研究所 [21]

采集方式

• OAI收割 [21]

内容类型

• 期刊论文 [20]
• 会议论文 [1]

发表日期

• 2011 [1]
• 2009 [6]
• 2008 [2]
• 2007 [2]
• 2006 [2]
• 2005 [1]
• 更多

学科主题

• 半导体物理 [21]

筛选

浏览/检索结果: 共21条，第1-10条 帮助 限定条件 学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Molecular beam epitaxy growth of GaAs on an offcut Ge substrate 期刊论文  OAI收割 chinese physics b, CHINESE PHYSICS B, 2011, 2011, 卷号: 20, 20, 期号: 1, 页码: article no.18102, Article no.18102 作者:  He JF;  Niu ZC;  Chang XY;  Ni HQ;  Zhu Y   |  收藏  |  浏览/下载：105/7  |  提交时间：2011/07/05 molecular beam epitaxy  anti-phase domain  GaAs/Ge interface  CHEMICAL VAPOR-DEPOSITION  JUNCTION SOLAR-CELLS  DOMAIN-FREE GROWTH  TEMPERATURE  QUALITY  FUTURE  Molecular Beam Epitaxy  Anti-phase Domain  Gaas/ge Interface  Chemical Vapor-deposition  Junction Solar-cells  Domain-free Growth  Temperature  Quality  Future   Structure, magnetization, and low-temperature spin dynamic behavior of zincblende Mn-rich Mn(Ga)As nanoclusters embedded in GaAs 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 105, 期号: 5, 页码: art. no. 053912 Wang WZ; Deng JJ; Lu J; Sun BQ; Wu XG; Zhao JH 收藏  |  浏览/下载：213/74  |  提交时间：2010/03/08 annealing  Curie temperature  ferromagnetic materials  gallium arsenide  III-V semiconductors  magnetic susceptibility  magnetisation  manganese compounds  nanofabrication  nanostructured materials  RKKY interaction  semiconductor thin films  semimagnetic semiconductors  spin dynamics   Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713 作者:  Zhang XW;  You JB;  Yin ZG 收藏  |  浏览/下载：70/1  |  提交时间：2010/03/08 annealing  carrier density  carrier mobility  diffusion  electrical conductivity  electrical resistivity  hydrogen  II-VI semiconductors  impurity states  interstitials  light transmission  plasma materials processing  semiconductor thin films  sputter deposition  vacancies (crystal)  visible spectra  wide band gap semiconductors  zinc compounds   Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 105, 期号: 2, 页码: art. no. 023104 作者:  Zhu JJ;  Zhang SM;  Jiang DS;  Zhao DG;  Yang H 收藏  |  浏览/下载：191/56  |  提交时间：2010/03/08 aluminium compounds  claddings  gallium compounds  III-V semiconductors  indium compounds  quantum well lasers  refractive index  waveguide lasers   Effect of Ka-band microwave on the spin dynamics of electrons in a GaAs/Al0.35Ga0.65As heterostructure 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 94, 期号: 19, 页码: art. no. 192107 作者:  Qian X 收藏  |  浏览/下载：79/7  |  提交时间：2010/03/08 aluminium compounds  carrier lifetime  gallium arsenide  high-frequency effects  III-V semiconductors  optical Kerr effect  semiconductor heterojunctions  spin dynamics  two-dimensional electron gas   Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 95, 期号: 4, 页码: art. no. 041901 作者:  Yang H;  Wang H;  Wang H;  Wang YT;  Yang H 收藏  |  浏览/下载：64/1  |  提交时间：2010/03/08 edge dislocations  gallium compounds  III-V semiconductors  impurities  photoluminescence  semiconductor doping  semiconductor thin films  silicon  wide band gap semiconductors  X-ray diffraction   Ultrafast dynamics of four-state magnetization reversal in (Ga,Mn)As 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 95, 期号: 5, 页码: art. no. 052108 作者:  Zhang XH 收藏  |  浏览/下载：78/1  |  提交时间：2010/03/08 gallium arsenide  high-speed optical techniques  III-V semiconductors  Kerr magneto-optical effect  magnetic domain walls  magnetic switching  magnetic thin films  magnetisation reversal  manganese compounds  nucleation  optical pumping  semiconductor thin films  semimagnetic semiconductors   Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy 期刊论文  OAI收割 chinese physics b, 2008, 卷号: 17, 期号: 3, 页码: 1119-1123 Gao, HL; Zeng, YP; Wang, BQ; Zhu, ZP; Wang, ZG 收藏  |  浏览/下载：54/6  |  提交时间：2010/03/08 molecular beam epitaxy  semiconducting III-V materials  high electron mobility transistors   Dislocation scattering in AlxGa1-xN/GaN heterostructures 期刊论文  OAI收割 applied physics letters, 2008, 卷号: 93, 期号: 18, 页码: art. no. 182111 Xu, XQ; Liu, XL; Han, XX; Yuan, HR; Wang, J; Guo, Y; Song, HP; Zheng, GL; Wei, HY; Yang, SY; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：61/0  |  提交时间：2010/03/08 aluminium compounds  dislocation density  electron mobility  gallium compounds  III-V semiconductors  interface roughness  semiconductor heterojunctions  two-dimensional electron gas  wide band gap semiconductors   稀磁半导体的研究进展 期刊论文  OAI收割 物理学进展, 2007, 卷号: 27, 期号: 2, 页码: 109-150 赵建华; 邓加军; 郑厚植 收藏  |  浏览/下载：21/0  |  提交时间：2010/11/23