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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [13]
采集方式
OAI收割 [13]
内容类型
期刊论文 [13]
发表日期
2015 [1]
2011 [2]
2010 [4]
2009 [1]
2006 [1]
2002 [1]
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学科主题
光电子学 [13]
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Efficient 1.54-μm emission through Eu2 þ sensitization of Er3 þ in thin films of Eu2 þ/Er3 þ codoped barium strontium silicate under broad ultraviolet light excitation
期刊论文
OAI收割
Journal of Luminescence, 2015, 卷号: 157, 页码: 193–196
Leliang Li
;
Jun Zheng
;
Yuhua Zuo
;
Buwen Cheng
;
Qiming Wang
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2016/03/23
Electronic band structure of a type-II 'W' quantum well calculated by an eight-band k center dot p model
期刊论文
OAI收割
chinese physics b, 2011, 卷号: 20, 期号: 3, 页码: article no.30507
Yu X
;
Gu YX
;
Wang Q
;
Wei X
;
Chen LH
收藏
  |  
浏览/下载:65/4
  |  
提交时间:2011/07/06
type-II 'W' quantum well
Burt-Foreman Hamiltonian
finite element methods
LASERS
ALLOYS
Structural and electronic properties of Si nanocrystals embedded in amorphous SiC matrix
期刊论文
OAI收割
journal of alloys and compounds, 2011, 卷号: 509, 期号: 9, 页码: 3963-3966
Song C
;
Rui YJ
;
Wang QB
;
Xu J
;
Li W
;
Chen KJ
;
Zuo YH
;
Wang QM
收藏
  |  
浏览/下载:54/6
  |  
提交时间:2011/07/05
Silicon carbide
Thin films
Crystal structure
Electronic properties
THIN-FILMS
SILICON
PHOTOLUMINESCENCE
SUPERLATTICE
ALLOYS
Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers
期刊论文
OAI收割
physical review b, 2010, 卷号: 81, 期号: 12, 页码: art. no. 125314
作者:
Wang H
;
Wang H
;
Yang
;
Jiang DS
收藏
  |  
浏览/下载:121/5
  |  
提交时间:2010/04/28
GAN
ALLOYS
Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition
期刊论文
OAI收割
chinese physics b, 2010, 卷号: 19, 期号: 2, 页码: art. no. 026804
Lu GJ (Lu Guo-Jun)
;
Zhu JJ (Zhu Jian-Jun)
;
Jiang DS (Jiang De-Sheng)
;
Wang YT (Wang Yu-Tian)
;
Zhao DG (Zhao De-Gang)
;
Liu ZS (Liu Zong-Shun)
;
Zhang SM (Zhang Shu-Ming)
;
Yang H (Yang Hui)
收藏
  |  
浏览/下载:109/2
  |  
提交时间:2010/04/22
metalorganic chemical vapor deposition
Al1-xInxN
gradual variation in composition
optical reflectance spectra
X-RAY-DIFFRACTION
PHASE EPITAXY
RELAXATION
FILMS
HETEROSTRUCTURES
SEPARATION
DYNAMICS
ALLOYS
REGION
LAYERS
Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques
期刊论文
OAI收割
chinese physics b, 2010, 卷号: 19, 期号: 10, 页码: art. no. 106802
Guo X (Guo Xi)
;
Wang H (Wang Hui)
;
Jiang DS (Jiang De-Sheng)
;
Wang YT (Wang Yu-Tian)
;
Zhao DG (Zhao De-Gang)
;
Zhu JJ (Zhu Jian-Jun)
;
Liu ZS (Liu Zong-Shun)
;
Zhang SM (Zhang Shu-Ming)
;
Yang H (Yang Hui)
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2010/11/02
InGaN
In-plane grazing incidence x-ray diffraction
reciprocal space mapping
biaxial strain
CRITICAL LAYER THICKNESS
OPTICAL-PROPERTIES
LATTICE-CONSTANTS
GAN
HETEROSTRUCTURES
ALLOYS
WELLS
Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties
期刊论文
OAI收割
physica b-condensed matter, 2010, 卷号: 405, 期号: 22, 页码: 4668-4672
Wang H (Wang H.)
;
Jiang DS (Jiang D. S.)
;
Jahn U (Jahn U.)
;
Zhu JJ (Zhu J. J.)
;
Zhao DG (Zhao D. G.)
;
Liu ZS (Liu Z. S.)
;
Zhang SM (Zhang S. M.)
;
Qiu YX (Qiu Y. X.)
;
Yang H (Yang H.)
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/12/12
InGaN
Dislocation
Metalorganic chemical vapor deposition
High resolution X-ray diffraction
Cathodoluminescence
MISFIT DISLOCATIONS
QUANTUM-WELLS
BAND-GAP
EPILAYERS
GENERATION
ALLOYS
INN
Substantial photo-response of InGaN p-i-n homojunction solar cells
期刊论文
OAI收割
semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055009
Zeng SW
;
Zhang BP
;
Sun JW
;
Cai JF
;
Chen C
;
Yu JZ
收藏
  |  
浏览/下载:58/7
  |  
提交时间:2010/03/08
FUNDAMENTAL-BAND GAP
INN
ABSORPTION
ALLOYS
ENERGY
Comparison between double crystals X-ray diffraction micro-Raman measurement on composition determination of high Ge content Si1_xGex layer epitaxied on Si substrate
期刊论文
OAI收割
journal of materials science & technology, 2006, 卷号: 22, 期号: 5, 页码: 651-654
Zhao L (Zhao Lei)
;
Zuo YH (Zuo Yuhua)
;
Cheng BW (Cheng Buwen)
;
Yu JZ (Yu Jinzhong)
;
Wang QM (Wang Qiming)
收藏
  |  
浏览/下载:37/0
  |  
提交时间:2010/04/11
Si1_xGex
Ge content
composition determination
double crystals X-ray diffraction (DCXRD)
micro-Raman measurement
BAND-GAP
HETEROSTRUCTURES
SUPERLATTICES
ALLOYS
RELAXATION
SCATTERING
THICKNESS
STRAIN
Photoluminescence of Te isoelectronic traps in ZnSeTe/ZnSe quantum wells under hydrostatic pressure
期刊论文
OAI收割
journal of infrared and millimeter waves, 2002, 卷号: 21, 期号: 1, 页码: 28-32
Fang ZL
;
Li GH
;
Han HX
;
Ding K
;
Chen Y
;
Peng CL
;
Yuan SX
收藏
  |  
浏览/下载:79/6
  |  
提交时间:2010/08/12
Te isoelectronic traps
pressure
photoluminescence
MOLECULAR-BEAM EPITAXY
ZNSE1-XTEX
ALLOYS
EMISSION
CENTERS
BEHAVIOR