机构

• 半导体研究所 [17]

采集方式

• OAI收割 [17]

内容类型

• 期刊论文 [14]
• 会议论文 [3]

发表日期

• 2011 [1]
• 2010 [1]
• 2008 [1]
• 2007 [1]
• 2006 [3]
• 2004 [1]
• 更多

学科主题

• 半导体材料 [17]

筛选

浏览/检索结果: 共17条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 mu m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design 期刊论文  OAI收割 chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: article no.44201 作者:  Cao YL;  Yang T 收藏  |  浏览/下载：18/0  |  提交时间：2011/07/05 WELL LASERS  DEPENDENCE  DIODE  GAIN   Catalytic Activation of Mg-Doped GaN by Hydrogen Desorption Using Different Metal Thin Layers 期刊论文  OAI收割 japanese journal of applied physics, JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 2010, 卷号: 49, 49, 期号: 10, 页码: art. no. 100201, Art. No. 100201 作者:  Wei TB (Wei Tongbo);  Wang JX (Wang Junxi);  Liu NX (Liu Naixin);  Lu HX (Lu Hongxi);  Zeng YP (Zeng Yiping)   |  收藏  |  浏览/下载：19/0  |  提交时间：2010/11/14 LOW-TEMPERATURE ACTIVATION  Low-temperature Activation  Films  FILMS   AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD 会议论文  OAI收割 34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007 Tang, J; Wang, XL; Xiao, HL; Ran, JX; Wang, CM; Wang, XY; Hu, GX; Li, JM 收藏  |  浏览/下载：45/0  |  提交时间：2010/03/09 PERFORMANCE  HETEROSTRUCTURES  OPTIMIZATION  MOBILITY   Band gap narrowing in heavily B doped Si1-xGex strained layers 期刊论文  OAI收割 acta physica sinica, 2007, 卷号: 56, 期号: 11, 页码: 6654-6659 Yao F (Yao Fei); Xue CL (Xue Chun-Lai); Cheng BW (Cheng Bu-Wen); Wang QM (Wang Qi-Ming) 收藏  |  浏览/下载：42/0  |  提交时间：2010/03/29 SiGe layer   Growth of high quality semi-insulating InP single crystal by suppression of compensation defects 会议论文  OAI收割 3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005 Zhao, YW; Dong, ZY; Duan, ML; Sun, WR; Yang, ZX 收藏  |  浏览/下载：202/19  |  提交时间：2010/03/29 indium phosphide   Recent research results on deep level defects in semi-insulating InP - Application to improve material quality 会议论文  OAI收割 12th international conference on indium phosphide and related materials, princeton, nj, may 07-11, 2006 Zhao, YW (Zhao, Youwen); Dong, ZY (Dong, Zhiyuan); Dong, HW (Dong, Hongwei); Sun, NF (Sun, Niefeng); Sun, TN (Sun, Tongnian) 收藏  |  浏览/下载：61/12  |  提交时间：2010/03/29 STIMULATED CURRENT SPECTROSCOPY  CURRENT TRANSIENT SPECTROSCOPY  FE-DOPED INP  POINT-DEFECTS  COMPENSATION  TEMPERATURE  DONORS  TRAPS   Growth of high quality semi-insulating InP single crystal by suppression of compensation defects 期刊论文  OAI收割 journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 75-77 Zhao YW; Dong ZY; Duan ML; Sun WR; Yang ZX 收藏  |  浏览/下载：37/0  |  提交时间：2010/04/11 indium phosphide  defect  semi-insualting  STIMULATED CURRENT SPECTROSCOPY  CURRENT TRANSIENT SPECTROSCOPY  SEMI-INSULATING INP  DEEP-LEVEL DEFECTS  FE   Depth distribution of the strain in the GaN layer with low-temperature AlN interlayer on Si(111) substrate studied by Rutherford backscattering/channeling 期刊论文  OAI收割 applied physics letters, 2004, 卷号: 85, 期号: 23, 页码: 5562-5564 Lu, Y; Cong, GW; Liu, XL; Lu, DC; Wang, ZG; Wu, MF 收藏  |  浏览/下载：20/0  |  提交时间：2010/03/17 STRESS   Photoluminescence of Mg-doped GaN grown by metalorganic chemical vapor deposition 期刊论文  OAI收割 journal of vacuum science & technology a, 2003, 卷号: 21, 期号: 4, 页码: 838-841 Qu BZ; Zhu QS; Sun XH; Wan SK; Wang ZG; Nagai H; Kawaguchi Y; Hiramatsu K; Sawaki N 收藏  |  浏览/下载：291/4  |  提交时间：2010/08/12 P-TYPE GAN  LIGHT-EMITTING-DIODES  LOCALIZED EXCITONS  GALLIUM NITRIDE  FILMS  DEFECTS  LUMINESCENCE  COMPENSATION  SPECTROSCOPY  ACCEPTORS   Investigation of Residual Donor Defects in Undoped and Fe-Doped LEC InP 期刊论文  OAI收割 半导体学报, 2002, 卷号: 23, 期号: 5, 页码: 455-458 Zhao Youwen; Sun Niefeng; S. Fung; C. D. Beling; Sun Tongnian; Lin Lanying 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/23