机构

• 半导体研究所 [123]

采集方式

• OAI收割 [123]

内容类型

• 期刊论文 [100]
• 会议论文 [23]

发表日期

• 2017 [1]
• 2015 [1]
• 2013 [2]
• 2012 [2]
• 2011 [9]
• 2010 [7]
• 更多

学科主题

• 光电子学 [123]

筛选

浏览/检索结果: 共123条，第1-10条 帮助 限定条件 学科主题：光电子学     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer 期刊论文  OAI收割 Journal of Crystal Growth, 2017, 卷号: 467, 页码: 1-5 作者:  Feng Liang;  Degang Zhao;  Desheng Jiang;  Zongshun Liu;  Jianjun Zhu 收藏  |  浏览/下载：30/0  |  提交时间：2018/07/11 Lateral growth of single-crystal Ge on insulating substrate using amorphous Si seed by rapid melting growth 期刊论文  OAI收割 thin solid films, Thin Solid Films, 2015, 2015, 卷号: 597, 597, 页码: 39–43, 39–43 作者:  Zhi Liu;  Juanjuan Wen;  Tianwei Zhou;  Chunlai Xue;  Yuhua Zuo   |  收藏  |  浏览/下载：11/0  |  提交时间：2016/03/22 Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy 期刊论文  OAI收割 journal of crystal growth, 2013, 卷号: 371, 页码: 7-10 Zhou, Kun; Liu, Jianping; Zhang, Shuming; Li, Zengcheng; Feng, Meixin; Li, Deyao; Zhang, Liqun; Wang, Feng; Zhu, Jianjun; Yang, Hui 收藏  |  浏览/下载：11/0  |  提交时间：2013/08/27 Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy 期刊论文  OAI收割 journal of crystal growth, 2013, 卷号: 372, 页码: 43-48 Su, X. J.; Xu, K.; Ren, G. Q.; Wang, J. F.; Xu, Y.; Zeng, X. H.; Zhang, J. C.; Cai, D. M.; Zhou, T. F.; Liu, Z. H.; Yang, H. 收藏  |  浏览/下载：11/0  |  提交时间：2013/08/27 In situ formation of indium catalysts to synthesize crystalline silicon nanowires on flexible stainless steel substrates by PECVD 期刊论文  OAI收割 journal of crystal growth, 2012, 卷号: 347, 期号: 1, 页码: 7-10 Xie, XB; Zeng, XB; Yang, P; Wang, C; Wang, QM 收藏  |  浏览/下载：13/0  |  提交时间：2013/03/17 Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD) 期刊论文  OAI收割 journal of crystal growth, 2012, 卷号: 348, 期号: 1, 页码: 25-30 Zhu, JJ; Fan, YM; Zhang, H; Lu, GJ; Wang, H; Zhao, DG; Jiang, DS; Liu, ZS; Zhang, SM; Chen, GF; Zhang, BS; Yang, H 收藏  |  浏览/下载：17/0  |  提交时间：2013/02/27 High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD 期刊论文  OAI收割 semiconductor science and technology, 2011, 卷号: 26, 期号: 5, 页码: article no.55013 Wu CM; Zhang BP; Shang JZ; Cai LE; Zhang JY; Yu JZ; Wang QM 收藏  |  浏览/下载：60/3  |  提交时间：2011/07/05 CHEMICAL-VAPOR-DEPOSITION  MOLECULAR-BEAM EPITAXY  PHASE EPITAXY  MIRRORS  GAN  WAVELENGTHS   Flattening of low temperature epitaxial Ge1-xSnx/Ge/Si(100) alloys via mass transport during post-growth annealing 期刊论文  OAI收割 applied surface science, 2011, 卷号: 257, 期号: 9, 页码: 4468-4471 Wang W; Su SJ; Zheng J; Zhang GZ; Xue CL; Zuo YH; Cheng BW; Wang QM 收藏  |  浏览/下载：97/7  |  提交时间：2011/07/05 Germanium tin alloys  Germanium buffer  Surface morphology evolution  Mass transport  SURFACE  GROWTH  EVOLUTION  DECAY   Strained and strain-relaxed epitaxial Ge1-xSnx alloys on Si(100) substrates 期刊论文  OAI收割 chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: art. no. 068103 作者:  Su SJ 收藏  |  浏览/下载：93/5  |  提交时间：2011/07/07 GeSn alloys  strained  strain-relaxed  molecular beam epitaxy   Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition 期刊论文  OAI收割 journal of alloys and compounds, 2011, 卷号: 509, 期号: 3, 页码: 748-750 作者:  Yang H;  Jiang DS;  Le LC;  Zhang SM;  Wu LL 收藏  |  浏览/下载：46/3  |  提交时间：2011/07/05 Nitride materials  Crystal growth  Composition fluctuations  X-ray diffraction  LAYER