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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [28]
采集方式
OAI收割 [28]
内容类型
期刊论文 [27]
会议论文 [1]
发表日期
2009 [2]
2008 [2]
2007 [1]
2003 [2]
2001 [4]
2000 [4]
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学科主题
半导体物理 [28]
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Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment
期刊论文
OAI收割
journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713
作者:
Zhang XW
;
You JB
;
Yin ZG
收藏
  |  
浏览/下载:70/1
  |  
提交时间:2010/03/08
annealing
carrier density
carrier mobility
diffusion
electrical conductivity
electrical resistivity
hydrogen
II-VI semiconductors
impurity states
interstitials
light transmission
plasma materials processing
semiconductor thin films
sputter deposition
vacancies (crystal)
visible spectra
wide band gap semiconductors
zinc compounds
Enhancement of field emission of the ZnO film by the reduced work function and the increased conductivity via hydrogen plasma treatment
期刊论文
OAI收割
applied physics letters, 2009, 卷号: 94, 期号: 26, 页码: art. no. 262105
作者:
Zhang XW
;
Yin ZG
;
You JB
收藏
  |  
浏览/下载:99/13
  |  
提交时间:2010/03/08
atomic force microscopy
field emission
hydrogen
II-VI semiconductors
plasma materials processing
sputter deposition
wide band gap semiconductors
work function
zinc compounds
Structural properties of ne implanted GaN
期刊论文
OAI收割
physica scripta, 2008, 卷号: 77, 期号: 3, 页码: art. no. 035601
作者:
Zhu JJ
;
Yang H
;
Liu W
;
Liu W
;
Lu GJ
收藏
  |  
浏览/下载:44/2
  |  
提交时间:2010/03/08
RAMAN-SCATTERING
Comment on
期刊论文
OAI收割
applied physics letters, 2008, 卷号: 93, 期号: 15, 页码: art. no. 156102
Zhou ZW
;
Li C
;
Chen SY
;
Lai HK
;
Yu JZ
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2010/03/08
THERMAL-EXPANSION
Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property
期刊论文
OAI收割
acta physica sinica, 2007, 卷号: 56, 期号: 9, 页码: 5536-5541
Zhao, YW (Zhao You-Wen)
;
Miao, SS (Miao Shan-Shan)
;
Dong, ZY (Dong Zhi-Yuan)
;
Lue, XH (Lue Xiao-Hong)
;
Deng, AH (Deng Ai-Hong)
;
Yang, J (Yang Jun)
;
Wang, B (Wang Bo)
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2010/03/29
indium phosphide
Nano-layer structure of silicon-on-insulator materials
期刊论文
OAI收割
journal of the korean physical society, 2003, 卷号: 42, 期号: 0, 页码: s713-s718
Wang X
;
Chen M
;
Chen J
;
Wang X
;
Dong YN
;
Liu XH
;
He P
;
Tian LL
;
Liu ZL
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2010/08/12
SOI
nanostructure
microelectronic materials
The micro-magnetic structures of Mn+ ion-implanted GaSb
期刊论文
OAI收割
japanese journal of applied physics part 1-regular papers short notes & review papers, 2003, 卷号: 42, 期号: 6a, 页码: 3389-3391
Zhang FQ
;
Chen NF
;
Liu ZK
;
Chai CL
;
Yang SY
;
Yang JL
;
Wu JL
;
Lin LY
;
Callaghan FD
;
Li T
;
Foxton CT
;
Bates CA
收藏
  |  
浏览/下载:99/0
  |  
提交时间:2010/08/12
magnetic micro-structures
GaSb
MFM
magnetic domain
ion implantation
FORCE MICROSCOPE
SEMICONDUCTORS
GAMNAS
The effects of pre-irradiation on the formation of Si1-xCx alloys
期刊论文
OAI收割
acta physica sinica, 2001, 卷号: 50, 期号: 7, 页码: 1329-1333
Wang YS
;
Li JM
;
Wang YB
;
Wang YT
;
Sun GS
;
Lin LY
收藏
  |  
浏览/下载:83/9
  |  
提交时间:2010/08/12
ion implantation
solid phase epitaxy
Si1-xCx alloy
SI
IMPLANTATION
CARBON
The transition from Eu3+ to Eu2+ in SiO2(Eu) thin films prepared by ion implantation and co-sputtering
期刊论文
OAI收割
acta physica sinica, 2001, 卷号: 50, 期号: 3, 页码: 532-535
Liu FZ
;
Zhu MF
;
Liu T
;
Li BC
收藏
  |  
浏览/下载:165/50
  |  
提交时间:2010/08/12
SiO2(Eu) films
XANES
SPECTROSCOPY
SILICON
VALENCE
GLASS
ER3+
Comparison of field effect transistor characteristics between space-grown and earth-grown gallium arsenide single crystal substrates
期刊论文
OAI收割
applied physics letters, 2001, 卷号: 78, 期号: 4, 页码: 478-479
Chen NF
;
Zhong XR
;
Lin LY
;
Zhang M
;
Wang YS
;
Bai XW
;
Zhao J
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2010/08/12
FLOATING-ZONE GROWTH
ZERO GRAVITY
MICROGRAVITY
STOICHIOMETRY
SEGREGATION
SILICON
GE