机构

• 半导体研究所 [12]

采集方式

• OAI收割 [12]

内容类型

• 期刊论文 [12]

发表日期

• 2011 [2]
• 2010 [4]
• 2009 [1]
• 2006 [1]
• 2002 [1]
• 2001 [2]
• 更多

学科主题

• 光电子学 [12]

筛选

浏览/检索结果: 共12条，第1-10条 帮助 限定条件 学科主题：光电子学     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Electronic band structure of a type-II 'W' quantum well calculated by an eight-band k center dot p model 期刊论文  OAI收割 chinese physics b, 2011, 卷号: 20, 期号: 3, 页码: article no.30507 Yu X; Gu YX; Wang Q; Wei X; Chen LH 收藏  |  浏览/下载：65/4  |  提交时间：2011/07/06 type-II 'W' quantum well  Burt-Foreman Hamiltonian  finite element methods  LASERS  ALLOYS   Structural and electronic properties of Si nanocrystals embedded in amorphous SiC matrix 期刊论文  OAI收割 journal of alloys and compounds, 2011, 卷号: 509, 期号: 9, 页码: 3963-3966 Song C; Rui YJ; Wang QB; Xu J; Li W; Chen KJ; Zuo YH; Wang QM 收藏  |  浏览/下载：54/6  |  提交时间：2011/07/05 Silicon carbide  Thin films  Crystal structure  Electronic properties  THIN-FILMS  SILICON  PHOTOLUMINESCENCE  SUPERLATTICE  ALLOYS   Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers 期刊论文  OAI收割 physical review b, 2010, 卷号: 81, 期号: 12, 页码: art. no. 125314 作者:  Wang H;  Wang H;  Yang;  Jiang DS 收藏  |  浏览/下载：121/5  |  提交时间：2010/04/28 GAN  ALLOYS   Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 2, 页码: art. no. 026804 Lu GJ (Lu Guo-Jun); Zhu JJ (Zhu Jian-Jun); Jiang DS (Jiang De-Sheng); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Liu ZS (Liu Zong-Shun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui) 收藏  |  浏览/下载：109/2  |  提交时间：2010/04/22 metalorganic chemical vapor deposition  Al1-xInxN  gradual variation in composition  optical reflectance spectra  X-RAY-DIFFRACTION  PHASE EPITAXY  RELAXATION  FILMS  HETEROSTRUCTURES  SEPARATION  DYNAMICS  ALLOYS  REGION  LAYERS   Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 10, 页码: art. no. 106802 Guo X (Guo Xi); Wang H (Wang Hui); Jiang DS (Jiang De-Sheng); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui) 收藏  |  浏览/下载：27/0  |  提交时间：2010/11/02 InGaN  In-plane grazing incidence x-ray diffraction  reciprocal space mapping  biaxial strain  CRITICAL LAYER THICKNESS  OPTICAL-PROPERTIES  LATTICE-CONSTANTS  GAN  HETEROSTRUCTURES  ALLOYS  WELLS   Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties 期刊论文  OAI收割 physica b-condensed matter, 2010, 卷号: 405, 期号: 22, 页码: 4668-4672 Wang H (Wang H.); Jiang DS (Jiang D. S.); Jahn U (Jahn U.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Qiu YX (Qiu Y. X.); Yang H (Yang H.) 收藏  |  浏览/下载：35/0  |  提交时间：2010/12/12 InGaN  Dislocation  Metalorganic chemical vapor deposition  High resolution X-ray diffraction  Cathodoluminescence  MISFIT DISLOCATIONS  QUANTUM-WELLS  BAND-GAP  EPILAYERS  GENERATION  ALLOYS  INN   Substantial photo-response of InGaN p-i-n homojunction solar cells 期刊论文  OAI收割 semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055009 Zeng SW; Zhang BP; Sun JW; Cai JF; Chen C; Yu JZ 收藏  |  浏览/下载：58/7  |  提交时间：2010/03/08 FUNDAMENTAL-BAND GAP  INN  ABSORPTION  ALLOYS  ENERGY   Comparison between double crystals X-ray diffraction micro-Raman measurement on composition determination of high Ge content Si1_xGex layer epitaxied on Si substrate 期刊论文  OAI收割 journal of materials science & technology, 2006, 卷号: 22, 期号: 5, 页码: 651-654 Zhao L (Zhao Lei); Zuo YH (Zuo Yuhua); Cheng BW (Cheng Buwen); Yu JZ (Yu Jinzhong); Wang QM (Wang Qiming) 收藏  |  浏览/下载：37/0  |  提交时间：2010/04/11 Si1_xGex  Ge content  composition determination  double crystals X-ray diffraction (DCXRD)  micro-Raman measurement  BAND-GAP  HETEROSTRUCTURES  SUPERLATTICES  ALLOYS  RELAXATION  SCATTERING  THICKNESS  STRAIN   Photoluminescence of Te isoelectronic traps in ZnSeTe/ZnSe quantum wells under hydrostatic pressure 期刊论文  OAI收割 journal of infrared and millimeter waves, 2002, 卷号: 21, 期号: 1, 页码: 28-32 Fang ZL; Li GH; Han HX; Ding K; Chen Y; Peng CL; Yuan SX 收藏  |  浏览/下载：79/6  |  提交时间：2010/08/12 Te isoelectronic traps  pressure  photoluminescence  MOLECULAR-BEAM EPITAXY  ZNSE1-XTEX  ALLOYS  EMISSION  CENTERS  BEHAVIOR   Phonon-induced Raman scattering in GaNAs 期刊论文  OAI收割 journal of infrared and millimeter waves, 2001, 卷号: 20, 期号: 1, 页码: 11-14 作者:  Tan PH;  Jiang DS 收藏  |  浏览/下载：87/6  |  提交时间：2010/08/12 GaNAs  Raman scattering  local vibrational mode  GAAS1-XNX  ALLOYS  GAASN