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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [27]
采集方式
OAI收割 [27]
内容类型
期刊论文 [24]
会议论文 [3]
发表日期
2011 [3]
2009 [1]
2006 [3]
2005 [2]
2004 [1]
2003 [3]
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学科主题
半导体材料 [27]
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Nanostructural instability of single-walled carbon nanotubes during electron beam induced shrinkage
期刊论文
OAI收割
carbon, 2011, 卷号: 49, 期号: 9, 页码: 3120-3124
Zhu XF
;
Li LX
;
Huang SL
;
Wang ZG
;
Lu GQ
;
Sun CH
;
Wang LZ
收藏
  |  
浏览/下载:25/3
  |  
提交时间:2011/07/05
IRRADIATION
NANOCAVITY
Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition
期刊论文
OAI收割
rare metals, 2011, 卷号: 30, 期号: 3, 页码: 247-251
作者:
Li GK
收藏
  |  
浏览/下载:74/2
  |  
提交时间:2011/07/05
vanadium dioxide
infrared transition
diffraction effect
dual ion beam sputtering
annealing
Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions
期刊论文
OAI收割
applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 1, 页码: 429-432
作者:
Zhang ML
收藏
  |  
浏览/下载:65/4
  |  
提交时间:2011/07/07
GaN
Ferromagnetic
Implantation
Annealing
Strong room-temperature ferromagnetism in Cu-implanted nonpolar GaN films
期刊论文
OAI收割
journal of applied physics, 2009, 卷号: 106, 期号: 11, 页码: art. no. 113921
Sun LL
;
Yan FW
;
Zhang HX
;
Wang JX
;
Zeng YP
;
Wang GH
;
Li JM
收藏
  |  
浏览/下载:99/0
  |  
提交时间:2010/04/03
annealing
ZnO thin films on Si(111) grown by pulsed laser deposition from metallic Zn target
期刊论文
OAI收割
applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 841-845
Zhao J (Zhao Jie)
;
Hu LZ (Hu Lizhong)
;
Wang ZY (Wang Zhaoyang)
;
Sun J (Sun Jie)
;
Wang ZJ (Wang Zhijun)
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2010/04/11
ZnO
pulsed laser deposition
oxygen pressure
annealing
X-ray diffraction
photoluminescence
ULTRAVIOLET EMISSION
ROOM-TEMPERATURE
ZINC-OXIDE
Photoluminescence from C+ ion-implanted and electrochemical etched Si layers
期刊论文
OAI收割
applied surface science, 2006, 卷号: 252, 期号: 24, 页码: 8424-8427
Shi LW (Shi Liwei)
;
Wang Q (Wang Qiang)
;
Li YG (Li Yuguo)
;
Xue CS (Xue Chengshan)
;
Zhuang HZ (Zhuang Huizhao)
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2010/04/11
ion implantation
annealing
chemical etching
photoluminescence
POROUS SILICON
LUMINESCENCE
Electron irradiation-induced defects in InP pre-annealed at high temperature
期刊论文
OAI收割
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 380-383
Zhao YW (Zhao Y. W.)
;
Dong ZY (Dong Z. Y.)
;
Deng AH (Deng A. H.)
收藏
  |  
浏览/下载:42/0
  |  
提交时间:2010/04/11
indium phosphide
defect
irradiation
THERMALLY STIMULATED CURRENT
UNDOPED SEMIINSULATING INP
DEEP-LEVEL DEFECTS
FRENKEL PAIRS
FE
SPECTROSCOPY
PHOSPHIDE
AMBIENT
TRAPS
Effects of crystalline quality on the phase stability of cubic boron nitride thin films under medium-energy ion irradiation
期刊论文
OAI收割
diamond and related materials, 2005, 卷号: 14, 期号: 9, 页码: 1482-1488
作者:
Zhang XW
收藏
  |  
浏览/下载:52/14
  |  
提交时间:2010/03/17
cubic boron nitride
Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness
期刊论文
OAI收割
journal of crystal growth, 2005, 卷号: 284, 期号: 1-2, 页码: 20-27
作者:
Ye XL
;
Xu B
收藏
  |  
浏览/下载:67/18
  |  
提交时间:2010/03/17
annealing
Amorphous silicon carbide films prepared by H-2 diluted silane-methane plasma
期刊论文
OAI收割
journal of crystal growth, 2004, 卷号: 264, 期号: 1-3, 页码: 7-12
Hu ZH
;
Liao XB
;
Diao HW
;
Kong GL
;
Zeng XB
;
Xu YY
收藏
  |  
浏览/下载:31/3
  |  
提交时间:2010/03/09
annealing