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  • 半导体物理 [62]
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Room-Temperature Operation of 2.4 mu m InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density 期刊论文  OAI收割
chinese physics letters, CHINESE PHYSICS LETTERS, 2014, 2014, 卷号: 31, 31, 期号: 5, 页码: 054204, 054204
作者:  Xing, JL;  Zhang, Y;  Liao, YP;  Wang, J;  Xiang, W
  |  收藏  |  浏览/下载：21/0  |  提交时间：2015/04/02
Optimization of InAs/GaAs quantum-dot structures and application to 1.3-mu m mode-locked laser diodes 期刊论文  OAI收割
chinese physics b, CHINESE PHYSICS B, 2014, 2014, 卷号: 23, 23, 期号: 2, 页码: 027803, 027803
作者:  Li, MF;  Ni, HQ;  Ding, Y;  David, B;  Kong, L
  |  收藏  |  浏览/下载：21/0  |  提交时间：2015/05/11
Intercalation of Few-Layer Graphite Flakes with FeCl3: Raman Determination of Fermi Level, Layer by Layer Decoupling, and Stability 期刊论文  OAI收割
journal of the american chemical society, JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2011, 2011, 卷号: 133, 133, 期号: 15, 页码: 5941-5946, 5941-5946
作者:  Zhao WJ;  Tan PH;  Liu J;  Ferrari AC;  Tan, PH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. phtan@semi.ac.cn
  |  收藏  |  浏览/下载：90/4  |  提交时间：2011/07/05
GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy 期刊论文  OAI收割
journal of physics d-applied physics, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 2011, 卷号: 44, 44, 期号: 33, 页码: 335102, 335102
作者:  He JF;  Wang HL;  Shang XJ;  Li MF;  Zhu Y
  |  收藏  |  浏览/下载：23/0  |  提交时间：2012/01/06
Charge Separation in Wurtzite/Zinc-Blende Heterojunction GaN Nanowires 期刊论文  OAI收割
chemphyschem, CHEMPHYSCHEM, 2010, 2010, 卷号: 11, 11, 期号: 15, 页码: 3329-3332, 3329-3332
作者:  Wang ZG (Wang Zhiguo);  Li JB (Li Jingbo);  Gao F (Gao Fei);  Weber WJ (Weber William J.);  Wang, ZG, Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China. 电子邮箱地址: zgwang@uestc.edu.cn
  |  收藏  |  浏览/下载：24/0  |  提交时间：2010/12/05
Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green 期刊论文  OAI收割
journal of applied physics, 2009, 卷号: 105, 期号: 2, 页码: art. no. 023104
作者:  Zhu JJ;  Zhang SM;  Jiang DS;  Zhao DG;  Yang H
收藏  |  浏览/下载：191/56  |  提交时间：2010/03/08
Metamorphic InGaAs Quantum Well Laser Diodes at 1.5 mu on GaAs Grown by Molecular Beam Epitaxy 期刊论文  OAI收割
chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 014214
Wang HL; Wu DH; Wu BP; Ni HQ; Huang SS; Xiong YH; Wang PF; Han Q; Niu ZC; Tangring I; Wang SM
收藏  |  浏览/下载：176/53  |  提交时间：2010/03/08
Strain Effects on the Optical Polarization Properties of R-Plane Wurtzite GaN 期刊论文  OAI收割
japanese journal of applied physics, 2009, 卷号: 48, 期号: 4, 页码: art. no. 041001
作者:  Hao GD
收藏  |  浏览/下载：129/28  |  提交时间：2010/03/08
Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods 期刊论文  OAI收割
journal of applied physics, 2009, 卷号: 106, 期号: 2, 页码: art. no. 026102
作者:  Jiang DS;  Zhang SM;  Yang H;  Yang H;  Wang YT
收藏  |  浏览/下载：58/0  |  提交时间：2010/03/08
Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes 期刊论文  OAI收割
chinese physics b, 2008, 卷号: 17, 期号: 4, 页码: 1472-1474
Zhang, Y; Han, CL; Gao, JF; Zhu, ZP; Wang, BQ; Zeng, YP
收藏  |  浏览/下载：55/6  |  提交时间：2010/03/08