机构

• 半导体研究所 [13]

采集方式

• OAI收割 [13]

内容类型

• 期刊论文 [9]
• 会议论文 [4]

发表日期

• 2010 [1]
• 2009 [1]
• 2006 [1]
• 2002 [1]
• 2001 [1]
• 2000 [3]
• 更多

学科主题

• 半导体材料 [13]

筛选

浏览/检索结果: 共13条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Progress of Microgravity Material Research During the Period of 2007-2009 期刊论文  OAI收割 空间科学学报, 2010, 卷号: 30, 期号: 5, 页码: 504-515 Chen Nuofu; Bai Yiming; Chen Wanghun; Zhou Yanfei; Luo Xinghong; Yu Yude 收藏  |  浏览/下载：13/0  |  提交时间：2011/08/16 Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions 期刊论文  OAI收割 半导体学报, 2009, 卷号: 30, 期号: 8, 页码: 47-51 Chen Xiaofeng; Chen Nuofu; Wu Jinliang; Zhang Xiulan; Chai Chunlin; Yu Yude 收藏  |  浏览/下载：19/0  |  提交时间：2010/11/23 Comparison of space- and ground-grown Ce: Bi12SiO20 single crystals 期刊论文  OAI收割 microgravity science and technology, 2006, 卷号: 17, 期号: 1, 页码: 40244 Zhou YF; Pan ZL; Liu Y; Ai F; Chen NF; Huang YY; He W; Tang LA; Wang JC 收藏  |  浏览/下载：269/40  |  提交时间：2010/04/11 Space-grown SI-GaAs and its application 会议论文  OAI收割 12th international semicoducting and insulating materials conference (simc-xii2002), smolenice, slovakia, jun 30-jul 05, 2002 Chen NF; Zhong XG; Zhang M; Lin LY 收藏  |  浏览/下载：14/0  |  提交时间：2010/10/29 SEMIINSULATING GALLIUM-ARSENIDE  FLOATING-ZONE GROWTH  CRYSTAL-GROWTH  ZERO GRAVITY  MICROGRAVITY  SEGREGATION  STOICHIOMETRY  SILICON  DEFECTS  INSB   Thermodynamic analysis of GaSb-GaCl3 vapor phase epitaxy 会议论文  OAI收割 1st international symposium on microgravity research and applications in physical sciences and biotechnology, sorrento, italy, sep 10-15, 2000 Lu DC; Lin LY 收藏  |  浏览/下载：12/0  |  提交时间：2010/10/29 TRANSPORT   Semi-insulating GaAs grown in outer space 期刊论文  OAI收割 materials science and engineering b-solid state materials for advanced technology, 2000, 卷号: 75, 期号: 2-3, 页码: 134-138 Chen NF; Zhong XR; Lin LY; Xie X; Zhang M 收藏  |  浏览/下载：53/0  |  提交时间：2010/08/12 GaAs  outer space  microgravity  integrated circuit  SEMIINSULATING GALLIUM-ARSENIDE  LEC-GAAS  DEFECTS  STOICHIOMETRY  SEGREGATION  CARBON  BORON   Experimental and numerical investigations on dissolution and recrystallization processes of GaSb/InSb/GaSb under microgravity and terrestrial conditions 期刊论文  OAI收割 journal of crystal growth, 2000, 卷号: 213, 期号: 1-2, 页码: 40-50 Hayakawa Y; Okano Y; Hirata A; Imaishi N; Kumagiri Y; Zhong X; Xie X; Yuan B; Wu F; Liu H; Yamaguchi T; Kumagawa M 收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12 microgravity  Chinese recoverable satellite  GaSb  InxGa1-xSb  dissolution  recrystallization  orientation  FLOATING-ZONE GROWTH  INXGA1-XSB CRYSTALS  GASB  MELT  INSB  DIFFUSION  SILICON  CONVECTION  STRIATION   Semi-insulating GaAs grown in outer space 会议论文  OAI收割 iumrs international conference of advanced materials, beijing, peoples r china, jun 13-18, 1999 Chen NF; Zhong XR; Lin LY; Xie X; Zhang M 收藏  |  浏览/下载：20/0  |  提交时间：2010/11/15 GaAs  outer space  microgravity  integrated circuit  SEMIINSULATING GALLIUM-ARSENIDE  LEC-GAAS  DEFECTS  STOICHIOMETRY  SEGREGATION  CARBON  BORON   Outer space grown semi-insulating GaAs and its applications 期刊论文  OAI收割 science in china series e-technological sciences, 1999, 卷号: 42, 期号: 5, 页码: 456-461 Lin LY; Zhang MA; Zhong XG; Yamada M; Chen NF 收藏  |  浏览/下载：52/0  |  提交时间：2010/08/12 GaAs  outer-space  microgravity  integrated-circuit  DEFECTS  STOICHIOMETRY  SEMIINSULATING GALLIUM-ARSENIDE   Structural properties of SI-GaAs grown in space 期刊论文  OAI收割 gravitational effects in materials and fluid sciences, 1999, 卷号: 24, 期号: 10, 页码: 1211-1214 Chen NF; Wang YT; Zhong XR; Lin LY 收藏  |  浏览/下载：53/0  |  提交时间：2010/08/12 SEMIINSULATING GALLIUM-ARSENIDE  MICROGRAVITY  STOICHIOMETRY