机构

• 半导体研究所 [33]

采集方式

• OAI收割 [33]

内容类型

• 期刊论文 [31]
• 会议论文 [2]

发表日期

• 2016 [1]
• 2015 [2]
• 2014 [2]
• 2013 [1]
• 2012 [1]
• 2011 [4]
• 更多

学科主题

• 光电子学 [33]

筛选

浏览/检索结果: 共33条，第1-10条 帮助 限定条件 学科主题：光电子学     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 GaN high electron mobility transistors with AlInN back barriers 期刊论文  OAI收割 journal of alloys and compounds, 2016, 卷号: 662, 页码: 16-19 X.G. He; D.G. Zhao; D.S. Jiang; J.J. Zhu; P. Chen; Z.S. Liu; L.C. Le; J. Yang; X.J. Li; J.P. Liu; L.Q. Zhang; H. Yang 收藏  |  浏览/下载：13/0  |  提交时间：2017/03/10 Strained Germanium-Tin (GeSn) P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Featuring High Effective Hole Mobility 期刊论文  OAI收割 international journal of thermophysics, International Journal of Thermophysics, 2015, 2015, 卷号: 36, 36, 页码: 980–986, 980–986 作者:  Yan Liu;  Jing Yan;  Hongjuan Wang;  Buwen Cheng;  Genquan Han   |  收藏  |  浏览/下载：24/0  |  提交时间：2016/03/22 High hole mobility GeSn on insulator formed by self-organized seeding lateral growth 期刊论文  OAI收割 journal of physics d: applied physics, Journal of Physics D: Applied Physics, 2015, 2015, 卷号: 48, 48, 页码: 445103, 445103 作者:  Zhi Liu;  Juanjuan Wen;  Xu Zhang;  Chuanbo Li;  Chunlai Xue   |  收藏  |  浏览/下载：20/0  |  提交时间：2016/02/16 Mobility enhancement in undoped Ge0.92Sn0.08 quantum well p-channel metal-oxide-emiconductor field-effect transistor fabricated on (111)-oriented substrate 期刊论文  OAI收割 semiconductor science and technology, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 2014, 卷号: 29, 29, 期号: 11, 页码: 115027, 115027 作者:  Liu, Yan;  Yan, Jing;  Liu, Mingshan;  Wang, Hongjuan;  Zhang, Qingfang   |  收藏  |  浏览/下载：18/0  |  提交时间：2015/03/19 Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition 期刊论文  OAI收割 thin solid films, THIN SOLID FILMS, 2014, 2014, 卷号: 564, 564, 页码: 135-139, 135-139 作者:  He, XG;  Zhao, DG;  Jiang, DS;  Liu, ZS;  Chen, P   |  收藏  |  浏览/下载：31/0  |  提交时间：2015/03/25 Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors 期刊论文  OAI收割 chinese physics b, 2013, 卷号: 22, 期号: 11, 页码: 117306 Tan, Ren-Bing; Qin, Hua; Zhang, Xiao-Yu; Xu, Wen 收藏  |  浏览/下载：13/0  |  提交时间：2014/05/16 Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor 期刊论文  OAI收割 international symposium on vlsi technology, systems, and applications, proceedings, 2012, 页码: 6210151 Wang, Lanxiang; Han, Genquan; Su, Shaojian; Cheng, Buwen; Yeo, Yee-Chia; Zhou, Qian; Yang, Yue; Guo, Pengfei; Wang, Wei; Tong, Yi; Lim, Phyllis Shi Ya; Xue, Chunlai; Wang, Qiming 收藏  |  浏览/下载：29/0  |  提交时间：2013/05/07 High-mobility germanium-tin(GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370C process modules 期刊论文  OAI收割 technical digest- international electron devices meeting, iedm, 2011, 页码: 16.7.1-16.7.3 Han, Genquan; Su, Shaojian; Zhan, Chunlei; Zhou, Qian; Yang, Yue; Wang, Lanxiang; Guo, Pengfei; Wei, Wang; Wong, Choun Pei; Shen, Ze Xiang; Cheng, Buwen; Yeo, Yee-Chia 收藏  |  浏览/下载：21/0  |  提交时间：2012/06/13 Electron devices  Germanium  Tin   The investigation on carrier distribution in InGaN/GaN multiple quantum well layers 期刊论文  OAI收割 journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.93117 作者:  Yang H;  Zhu JH;  Wang H;  Zhang SM;  Yang H 收藏  |  浏览/下载：47/3  |  提交时间：2011/07/05 DIODES  EFFICIENCY   Room temperature GaN/AlGaN self-mixing terahertz detector enhanced by resonant antennas 期刊论文  OAI收割 applied physics letters, 2011, 卷号: 98, 期号: 25, 页码: 252103 Sun, Y.F.; Sun, J.D.; Zhou, Y.; Tan, R.B.; Zeng, C.H.; Xue, W.; Qin, H.; Zhang, B.S.; Wu, D.M., 收藏  |  浏览/下载：36/0  |  提交时间：2012/06/13 Antennas  DC power transmission  Electron mobility  High electron mobility transistors  Low pass filters  Terahertz wave detectors