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  • 半导体物理 [62]
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Investigation of high hole mobility In0.41Ga0.59Sb/Al0.91Ga0.09Sb quantum well structures grown by molecular beam epitaxy 期刊论文  OAI收割
applied physics letters, APPLIED PHYSICS LETTERS, 2014, 2014, 卷号: 104, 104, 期号: 5, 页码: 052111, 052111
作者:  Wang, J;  Xing, JL;  Xiang, W;  Wang, GW;  Xu, YQ
  |  收藏  |  浏览/下载：24/0  |  提交时间：2015/03/19
Molecular beam epitaxy growth of high electron mobility InAs AlSb deep 期刊论文  OAI收割
journal of applied physics, Journal of Applied Physics, 2013, 2013, 卷号: 114, 114, 期号: 1, 页码: 013704, 013704
作者:  Juan Wang, Guo-Wei Wang, Ying-Qiang Xu, Jun-Liang Xing, Wei Xiang, Bao Tang, Yan Zhu, Zheng-Wei Ren, Zhen-Hong He, Zhi-Chuan Niu
  |  收藏  |  浏览/下载：24/0  |  提交时间：2014/03/26
Extraction of terahertz emission from a grating-coupled high-electron-mobility transistor 期刊论文  OAI收割
journal of semiconductors, Journal of Semiconductors, 2013, 2013, 卷号: 34, 34, 期号: 2, 页码: 022002, 022002
作者:  Yu, Zhou;  Xinxing, Li;  Renbing, Tan;  Wei, Xue;  Yongdan, Huang
  |  收藏  |  浏览/下载：16/0  |  提交时间：2014/05/08
Polarization-induced remote interfacial charge scattering in Al2O3/AlGaN/GaN double heterojunction high electron mobility transistors 期刊论文  OAI收割
applied physics letters, 2012, 卷号: 100, 期号: 13, 页码: 132105
Ji, D; Liu, B; Lu, YW; Liu, GP; Zhu, QS; Wang, ZG
收藏  |  浏览/下载：11/0  |  提交时间：2013/03/20
Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation 期刊论文  OAI收割
journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 6, 页码: 64001, 64001
作者:  Zhang, Renping;  Yan, Wei;  Wang, Xiaoliang;  Yang, Fuhua;  Zhang, R.(zhangrenping@semi.ac.cn)
  |  收藏  |  浏览/下载：28/0  |  提交时间：2012/06/14
GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy 期刊论文  OAI收割
journal of physics d-applied physics, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 2011, 卷号: 44, 44, 期号: 33, 页码: 335102, 335102
作者:  He JF;  Wang HL;  Shang XJ;  Li MF;  Zhu Y
  |  收藏  |  浏览/下载：23/0  |  提交时间：2012/01/06
Native p-type transparent conductive CuI via intrinsic defects 期刊论文  OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2011, 2011, 卷号: 110, 110, 期号: 5, 页码: 54907, 54907
作者:  Wang J;  Li JB;  Li SS;  Li, JB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China, jbli@semi.ac.cn
  |  收藏  |  浏览/下载：35/0  |  提交时间：2012/01/06
Elastic, Electronic, and Optical Properties of Two-Dimensional Graphyne Sheet 期刊论文  OAI收割
journal of physical chemistry c, JOURNAL OF PHYSICAL CHEMISTRY C, 2011, 2011, 卷号: 115, 115, 期号: 42, 页码: 20466-20470, 20466-20470
作者:  Kang, J;  Li, JB;  Wu, FM;  Li, SS;  Xia, JB
  |  收藏  |  浏览/下载：21/0  |  提交时间：2012/01/06
Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells 期刊论文  OAI收割
applied physics letters, APPLIED PHYSICS LETTERS, 2011, 2011, 卷号: 99, 99, 期号: 11, 页码: 113514, 113514
作者:  Shang XJ;  He JF;  Li MF;  Zhan F;  Ni HQ
  |  收藏  |  浏览/下载：17/0  |  提交时间：2012/01/06
Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell 期刊论文  OAI收割
applied physics a-materials science & processing, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 2011, 卷号: 103, 103, 期号: 2, 页码: 335-341, 335-341
作者:  Shang XJ;  He JF;  Wang HL;  Li MF;  Zhu Y
  |  收藏  |  浏览/下载：40/1  |  提交时间：2011/07/05