机构

• 半导体研究所 [10]

采集方式

• OAI收割 [10]

内容类型

• 期刊论文 [8]
• 会议论文 [2]

发表日期

• 2011 [1]
• 2009 [1]
• 2008 [1]
• 2005 [1]
• 2003 [1]
• 2002 [1]
• 更多

学科主题

• 半导体物理 [10]

筛选

浏览/检索结果: 共10条，第1-10条 帮助 限定条件 学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 First principle study of the thermal conductance in graphene nanoribbon with vacancy and substitutional silicon defects 期刊论文  OAI收割 applied physics letters, APPLIED PHYSICS LETTERS, 2011, 2011, 卷号: 98, 98, 期号: 11, 页码: article no.113114, Article no.113114 作者:  Jiang JW;  Wang BS;  Wang JS;  Jiang, JW, Natl Univ Singapore, Dept Phys, Singapore 117542, Singaporephyjj@nus.edu.sg   |  收藏  |  浏览/下载：52/4  |  提交时间：2011/07/05 High Polarization Single Mode Photonic Crystal Microlaser 期刊论文  OAI收割 chinese physics letters, 2009, 卷号: 26, 期号: 8, 页码: art. no. 084210 Chen W; Xing MX; Zhou WJ; Liu AJ; Zheng WH 收藏  |  浏览/下载：72/4  |  提交时间：2010/03/08 DEFECT LASER  NANOCAVITIES  SLAB   Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles 期刊论文  OAI收割 physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206 Shi LJ; Zhu LF; Zhao YH; Liu BG 收藏  |  浏览/下载：217/56  |  提交时间：2010/03/08 ab initio calculations  aluminium compounds  annealing  band structure  chromium  Curie temperature  density functional theory  exchange interactions (electron)  ferromagnetic materials  III-V semiconductors  semimagnetic semiconductors  total energy  vacancies (crystal)   Improvement of the electrical property of semi-insulating InP by suppression of compensation defects 会议论文  OAI收割 17th international conference on indium phosphide and related materials, glasgow, scotland, may 08-12, 2005 Zhao, YW; Dong, ZY 收藏  |  浏览/下载：220/68  |  提交时间：2010/03/29 ENCAPSULATED CZOCHRALSKI INP  SEMICONDUCTOR COMPOUND-CRYSTALS  STIMULATED CURRENT SPECTROSCOPY  CURRENT TRANSIENT SPECTROSCOPY  DEEP-LEVEL DEFECTS  ANNEALING AMBIENT  POINT-DEFECTS  FE  PHOSPHIDE  DONORS   Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers 会议论文  OAI收割 1st international symposium on point defect and stoichiometry, sendai, japan, mar 20-22, 2003 Leung BH; Fong WK; Surya C; Lu LW; Ge WK 收藏  |  浏览/下载：22/0  |  提交时间：2010/10/29 GaN  low-frequency noise  deep levels  deep level transient Fourier spectroscopy  DEVICES   Creation and suppression of point defects through a kick-out substitution process of Fe in InP 期刊论文  OAI收割 applied physics letters, 2002, 卷号: 80, 期号: 16, 页码: 2878-2879 Zhao YW; Dong HW; Chen YH; Zhang YH; Jiao JH; Zhao JQ; Lin LY; Fung S 收藏  |  浏览/下载：88/2  |  提交时间：2010/08/12 SEMIINSULATING INP  ZN DIFFUSION  COMPLEXES  PHOSPHIDE  MECHANISM  CRYSTALS   Random telegraph noise in the photoluminescence of individual GaxIn1-xAs quantum dots in GaAs 期刊论文  OAI收割 physical review b, 2001, 卷号: 64, 期号: 4, 页码: art.no.045317 作者:  Xu B 收藏  |  浏览/下载：90/6  |  提交时间：2010/08/12 SPECTROSCOPY   Gap states of hydrogenated amorphous silicon near and above the threshold of microcrystallinity with subtle boron compensation 期刊论文  OAI收割 applied physics letters, 2001, 卷号: 78, 期号: 17, 页码: 2509-2511 Sheng SR; Liao XB; Kong GL 收藏  |  浏览/下载：103/17  |  提交时间：2010/08/12 CONSTANT PHOTOCURRENT METHOD  A-SI-H  ABSORPTION  FILMS  SPECTROSCOPY  DEPOSITION  STABILITY  DILUTION   Temperature dependence of the Fermi level in low-temperature-grown GaAs 期刊论文  OAI收割 applied physics letters, 1998, 卷号: 72, 期号: 15, 页码: 1866-1868 Chen YH; Yang Z; Wang ZG; Li RG 收藏  |  浏览/下载：42/0  |  提交时间：2010/08/12 BEAM-EPITAXIAL GAAS  HOPPING CONDUCTION  200-DEGREES-C  SPECTROSCOPY  DEFECTS   DEFECT MODEL OF PHOTOCONVERSION BY OXYGEN IN SEMIINSULATING GAAS 期刊论文  OAI收割 physical review b, 1991, 卷号: 44, 期号: 24, 页码: 13435-13445 ZHONG XF 收藏  |  浏览/下载：12/0  |  提交时间：2010/11/15 GALLIUM-ARSENIDE  LOCAL MODE  SPECTROSCOPY