机构

• 半导体研究所 [47]

采集方式

• OAI收割 [47]

内容类型

• 期刊论文 [39]
• 会议论文 [8]

发表日期

• 2016 [1]
• 2014 [1]
• 2012 [2]
• 2011 [4]
• 2010 [5]
• 2009 [3]
• 更多

学科主题

• 光电子学 [47]
• 半导体器件 [1]
• 半导体材料 [1]
• 半导体物理 [1]

筛选

浏览/检索结果: 共47条，第1-10条 帮助 限定条件 学科主题：光电子学     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 GaN-based violet lasers grown on sapphire with a novel facet fabrication method 会议论文  OAI收割 solid state lighting (sslchina), 2015 12th china international forum, 中国深圳, 2015 Yingdong Tian; Yun Zhang; Jianchang Yan; Xiang Chen; Yanan Guo; Xuecheng Wei; Junxi Wang; Jinmin Li 收藏  |  浏览/下载：51/0  |  提交时间：2016/06/02 Effects of Fe doping on the strain and optical properties of GaN epilayers grown on sapphire substrates 期刊论文  OAI收割 rsc advances, RSC ADVANCES, 2014, 2014, 卷号: 4, 4, 期号: 98, 页码: 55430-55434, 55430-55434 作者:  Zheng, CC;  Ning, JQ;  Wu, ZP;  Wang, JF;  Zhao, DG   |  收藏  |  浏览/下载：13/0  |  提交时间：2015/03/20 Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire 期刊论文  OAI收割 journal of alloys and compounds, 2012, 卷号: 544, 页码: 94-98 Zhao, D.G; Jiang, D.S; Wu, L.L; Le, L.C; Li, L; Chen, P; Liu, Z.S; Zhu, J.J; Wang, H; Zhang, S.M; Yang, H 收藏  |  浏览/下载：18/0  |  提交时间：2013/05/07 Photoluminescence properties of Al-rich AlXGa1-XN grown on AlN/sapphire template by MOCVD 期刊论文  OAI收割 physica status solidi (c) current topics in solid state physics, Physica Status Solidi (C) Current Topics in Solid State Physics, 2012, 2012, 卷号: 9, 9, 期号: 3-4, 页码: 733-736, 733-736 作者:  Zeng, Jianping;  Yan, Jianchang;  Wang, Junxi;  Cong, Peipei;  Li, Jinmin   |  收藏  |  浏览/下载：15/0  |  提交时间：2013/05/07 High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD 期刊论文  OAI收割 semiconductor science and technology, 2011, 卷号: 26, 期号: 5, 页码: article no.55013 Wu CM; Zhang BP; Shang JZ; Cai LE; Zhang JY; Yu JZ; Wang QM 收藏  |  浏览/下载：62/3  |  提交时间：2011/07/05 CHEMICAL-VAPOR-DEPOSITION  MOLECULAR-BEAM EPITAXY  PHASE EPITAXY  MIRRORS  GAN  WAVELENGTHS   The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition 期刊论文  OAI收割 chinese physics b, 2011, 卷号: 20, 期号: 12, 页码: 127306 Le LC (Le Ling-Cong); Zhao DG (Zhao De-Gang); Wu LL (Wu Liang-Liang); Deng Y (Deng Yi); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Zhang BS (Zhang Bao-Shun); Yang H (Yang Hui) 收藏  |  浏览/下载：11/0  |  提交时间：2012/02/22 Improved performance of UV-LED by p-AlGaN with graded composition 期刊论文  OAI收割 physica status solidi(c) current topics in solid state physics, Physica Status Solidi(C) Current Topics in Solid State Physics, 2011, 2011, 卷号: 8, 8, 期号: 2, 页码: 461-463, 461-463 作者:  Yan, Jianchang;  Wang, Junxi;  Cong, Peipei;  Sun, Lili;  Liu, Naixin   |  收藏  |  浏览/下载：44/0  |  提交时间：2012/06/14 Atomic force microscopy  Diffraction  Electroluminescence  Gallium  Metallorganic chemical vapor deposition  Organic chemicals  Organic light emitting diodes(OLED)  Organometallics  Structure(composition)  Ultraviolet radiation  X ray diffraction  Atomic Force Microscopy  Diffraction  Electroluminescence  Gallium  Metallorganic Chemical Vapor Deposition  Organic Chemicals  Organic Light Emitting Diodes(Oled)  Organometallics  Structure(Composition)  Ultraviolet Radiation  x Ray Diffraction   Fabrication of246 nm back-illuminated AlGaN solar-blind ultraviolet p-i-n photodetector 期刊论文  OAI收割 hongwai yu jiguang gongcheng/infrared and laser engineering, Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2011, 2011, 卷号: 40, 40, 期号: 1, 页码: 32-35, 32-35 作者:  Yan, Tingjing;  Chong, Ming;  Zhao, Degang;  Zhang, Shuang;  Chen, Lianghui   |  收藏  |  浏览/下载：18/0  |  提交时间：2012/06/14 Alloying  Fabrication  Gallium  Heterojunctions  Optoelectronic devices  Pixels  Alloying  Fabrication  Gallium  Heterojunctions  Optoelectronic Devices  Pixels   Time delay in InGaN multiple quantum well laser diodes at room temperature 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 12, 页码: article no.124211 作者:  Wang H 收藏  |  浏览/下载：41/2  |  提交时间：2011/07/05 InGaN  laser diode  delay effect  saturable absorber  traps  LIGHT EMISSION   Optical properties of InN rods on sapphire grown by metal-organic chemical vapor deposition 期刊论文  OAI收割 physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 138-141 作者:  Zhang SM 收藏  |  浏览/下载：58/1  |  提交时间：2011/07/05 BAND-GAP  INDIUM NITRIDE  TRANSPORT  EMISSION