机构

• 半导体研究所 [19]

采集方式

• OAI收割 [19]

内容类型

• 期刊论文 [16]
• 会议论文 [3]

发表日期

• 2009 [1]
• 2007 [1]
• 2006 [2]
• 2004 [3]
• 2003 [2]
• 2002 [2]
• 更多

学科主题

• 半导体材料 [19]

筛选

浏览/检索结果: 共19条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE 期刊论文  OAI收割 chinese physics letters, 2009, 卷号: 26, 期号: 9, 页码: art. no. 096801 作者:  Yang JK;  Wei TB;  Duan RF 收藏  |  浏览/下载：73/3  |  提交时间：2010/03/08 VAPOR-PHASE EPITAXY  DISLOCATIONS  SUBSTRATE  LAYER   Structural and Optical Performance of GaN Thick Film Grown by HVPE 期刊论文  OAI收割 半导体学报, 2007, 卷号: 28, 期号: 1, 页码: 19-23 作者:  Duan Ruifei;  Liu Zhe;  Duan Ruifei;  Wei Tongbo 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/23 High-precision determination of lattice constants and structural characterization of InN thin films 期刊论文  OAI收割 journal of vacuum science & technology a, 2006, 卷号: 24, 期号: 2, 页码: 275-279 Wu MF; Zhou SQ; Vantomme A; Huang Y; Wang H; Yang H 收藏  |  浏览/下载：108/0  |  提交时间：2010/04/11 X-RAY-DIFFRACTION  BAND-GAP  EPITAXIAL LAYERS  INDIUM NITRIDE  HEXAGONAL INN  CUBIC INN  GROWTH  PARAMETERS  INGAN  PHASE   Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文  OAI收割 international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005 Sun, GS (Sun, Guosheng); Ning, J (Ning, Jin); Gong, QC (Gong, Quancheng); Gao, X (Gao, Xin); Wang, L (Wang, Lei); Liu, XF (Liu, Xingfang); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin) 收藏  |  浏览/下载：99/29  |  提交时间：2010/03/29 homoepitaxial growth  low-pressure hot-wall CVD  structural and optical characteristics  intentional doping  Schottky barrier diodes   Characterization of InAs quantum dots on lattice-matched InAlGaAs/InP superlattice structures 期刊论文  OAI收割 journal of crystal growth, 2004, 卷号: 270, 期号: 3-4, 页码: 364-369 Huang XQ; Liu FQ; Che XL; Liu JQ; Lei W; Wang ZG 收藏  |  浏览/下载：214/29  |  提交时间：2010/03/09 nanostructures   Metal-organic Vapor Phase Epitaxy Growth and Characterization of InAlGaN Epilayers 期刊论文  OAI收割 人工晶体学报, 2004, 卷号: 33, 期号: 4, 页码: 539-544 作者:  Li Dabing 收藏  |  浏览/下载：9/0  |  提交时间：2010/11/23 Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition 期刊论文  OAI收割 半导体学报, 2004, 卷号: 25, 期号: 12, 页码: 1549-1554 Sun Guosheng; Gao Xin; Zhang Yongxing; Wang Lei; Zhao Wanshun; Zeng Yiping; Li Jinmin 收藏  |  浏览/下载：15/0  |  提交时间：2010/11/23 Microstructure characterization of transition films from amorphous to nanocrocrystalline silicon 期刊论文  OAI收割 journal of crystal growth, 2003, 卷号: 256, 期号: 1-2, 页码: 27-32 Xu YY; Liao XB; Kong GL; Zeng XB; Hu ZH; Diao HW; Zhang SB 收藏  |  浏览/下载：56/0  |  提交时间：2010/08/12 nanostructures  growth from vapor  chemical vapor deposition processes  semiconducting silicon  A-SI-H  MICROCRYSTALLINE SILICON  EXCITATION-FREQUENCY  HYDROGENATED SILICON  DEPOSITION  PLASMA  TEMPERATURE   Structural and photoluminescent properties of ternary Zn1-xCdxO crystal films grown on Si(111) substrates 期刊论文  OAI收割 journal of crystal growth, 2003, 卷号: 256, 期号: 1-2, 页码: 78-82 Ye ZZ; Ma DW; He JH; Huang JY; Zhao BH; Luo XD; Xu ZY 收藏  |  浏览/下载：487/1  |  提交时间：2010/08/12 characterization  crystal structure  DC sputtering  alloys  zinc compounds  semiconducting II-VI materials  THIN-FILMS  ROOM-TEMPERATURE  ULTRAVIOLET-LASER  SPRAY-PYROLYSIS  ZNO  MGXZN1-XO  EMISSION  ALLOY   Progress of Si-based nanocrystalline luminescent materials 期刊论文  OAI收割 chinese science bulletin, 2002, 卷号: 47, 期号: 15, 页码: 1233-1242 Peng YC; Zhao XW; Fu GS 收藏  |  浏览/下载：84/0  |  提交时间：2010/08/12 Si-based nanomaterials  fabricated method  structural characterization  light emitting mechanism  Si-based photoelectronic devices  CHEMICAL-VAPOR-DEPOSITION  SELF-ASSEMBLING FORMATION  SILICON QUANTUM DOTS  LASER-ABLATION  OPTICAL-ABSORPTION  POROUS SILICON  LIGHT-EMISSION  PHOTOLUMINESCENCE  FABRICATION  OXYGEN