机构

• 半导体研究所 [47]

采集方式

• OAI收割 [30]
• iSwitch采集 [17]

内容类型

• 期刊论文 [41]
• 会议论文 [6]

发表日期

• 2014 [1]
• 2011 [2]
• 2010 [4]
• 2009 [3]
• 2008 [4]
• 2007 [7]
• 更多

学科主题

• 半导体材料 [14]
• 半导体物理 [7]
• 光电子学 [5]
• 半导体器件 [4]

筛选

浏览/检索结果: 共47条，第1-10条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p-i-n avalanche photodiodes 期刊论文  OAI收割 chinese physics b, CHINESE PHYSICS B, 2014, 2014, 卷号: 23, 23, 期号: 2, 页码: 028503, 028503 作者:  Li, XJ;  Zhao, DG;  Jiang, DS;  Liu, ZS;  Chen, P   |  收藏  |  浏览/下载：15/0  |  提交时间：2015/03/20 Effect of compensation doping on the electrical and optical properties of mid-infrared type-ii inas/gasb superlattice photodetectors 期刊论文  iSwitch采集 Chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: 6 作者:  Wang Yong-Bin;  Xu Yun;  Zhang Yu;  Yu Xiu;  Song Guo-Feng 收藏  |  浏览/下载：29/0  |  提交时间：2019/05/12 Inas/gasb superlattices  P-doping concentration  Electrical and optical properties   The explanation of InN bandgap discrepancy based on experiments and first-principle calculations 期刊论文  OAI收割 physics letters a, PHYSICS LETTERS A, 2011, 2011, 卷号: 375, 375, 期号: 7, 页码: 1152-1155, 1152-1155 作者:  Liu CR;  Li JB;  Liu, CR, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. supermanliu5@semi.ac.cn;  jbli@semi.ac.cn   |  收藏  |  浏览/下载：58/6  |  提交时间：2011/07/05 First principle calculation  Indium nitride  Band gap  Defect  INITIO MOLECULAR-DYNAMICS  AUGMENTED-WAVE METHOD  INDIUM NITRIDE  GAP  PSEUDOPOTENTIALS  SEMICONDUCTORS  IMPURITIES  ABSORPTION  DEFECTS  ALLOYS  First Principle Calculation  Indium Nitride  Band Gap  Defect  Initio Molecular-dynamics  Augmented-wave Method  Indium Nitride  Gap  Pseudopotentials  Semiconductors  Impurities  Absorption  Defects  Alloys   Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films 期刊论文  iSwitch采集 Diamond and related materials, 2010, 卷号: 19, 期号: 11, 页码: 1371-1376 作者:  Ying, J.;  Zhang, X. W.;  Fan, Y. M.;  Tan, H. R.;  Yin, Z. G. 收藏  |  浏览/下载：30/0  |  提交时间：2019/05/12 Cubic boron nitride  Doping  Ion beam assisted deposition  X-ray photoelectron spectroscopy   Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face iii-nitride structure 期刊论文  iSwitch采集 Applied physics letters, 2010, 卷号: 97, 期号: 6, 页码: 3 作者:  Zhang, L.;  Ding, K.;  Yan, J. C.;  Wang, J. X.;  Zeng, Y. P. 收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12 Aluminium compounds  Electron gas  Gallium compounds  Iii-v semiconductors  Mocvd  Polarisation  Semiconductor doping  Semiconductor thin films  Wide band gap semiconductors   Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films 期刊论文  OAI收割 diamond and related materials, 2010, 卷号: 19, 期号: 11, 页码: 1371-1376 Ying J (Ying J.); Zhang XW (Zhang X. W.); Fan YM (Fan Y. M.); Tan HR (Tan H. R.); Yin ZG (Yin Z. G.) 收藏  |  浏览/下载：27/0  |  提交时间：2010/12/28 Cubic boron nitride  Doping  Ion beam assisted deposition  X-ray photoelectron spectroscopy  RAY PHOTOELECTRON-SPECTROSCOPY  VAPOR-DEPOSITION  SI  NUCLEATION  GROWTH   Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs 期刊论文  OAI收割 physical review b, PHYSICAL REVIEW B, 2010, 2010, 卷号: 82, 82, 期号: 19, 页码: art. no. 193204, Art. No. 193204 作者:  Deng HX (Deng Hui-Xiong);  Li JB (Li Jingbo);  Li SS (Li Shu-Shen);  Peng HW (Peng Haowei);  Xia JB (Xia Jian-Bai)   |  收藏  |  浏览/下载：47/0  |  提交时间：2010/12/27 IMPURITIES  Impurities  Gaas1-xnx  Nitrogen  Gainnas  States  Traps  GAAS1-XNX  NITROGEN  GAINNAS  STATES  TRAPS   Origin and enhancement of hole-induced ferromagnetism in first-row d(0) semiconductors 期刊论文  iSwitch采集 Physical review letters, 2009, 卷号: 102, 期号: 1, 页码: 4 作者:  Peng, Haowei;  Xiang, H. J.;  Wei, Su-Huai;  Li, Shu-Shen;  Xia, Jian-Bai 收藏  |  浏览/下载：16/0  |  提交时间：2019/05/12 In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文  OAI收割 international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007 Sun, GS; Zhao, YM; Wang, L; Wang, L; Zhao, WS; Liu, XF; Ji, G; Zeng, YP 收藏  |  浏览/下载：39/0  |  提交时间：2010/03/09 in-situ doping  boron  aluminum  memory effects  hot-wall LPCVD  4H-SiC   Origin and Enhancement of Hole-Induced Ferromagnetism in First-Row d(0) Semiconductors 期刊论文  OAI收割 physical review letters, 2009, 卷号: 102, 期号: 1, 页码: art. no. 017201 作者:  Li JB 收藏  |  浏览/下载：392/60  |  提交时间：2010/03/08 COLLECTIVE ELECTRON FERROMAGNETISM  ENERGY  MODEL