机构

• 半导体研究所 [91]

采集方式

• OAI收割 [91]

内容类型

• 期刊论文 [78]
• 会议论文 [13]

发表日期

• 2015 [2]
• 2014 [2]
• 2013 [2]
• 2011 [7]
• 2010 [3]
• 2009 [2]
• 更多

学科主题

• 半导体材料 [91]

筛选

浏览/检索结果: 共91条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Effect of hydrogen flow on growth of 3C-SiC heteroepitaxial layers on Si(111) substrates 期刊论文  OAI收割 applied surface science, 2015, 卷号: 353, 页码: 744-749 Guoguo Yan; Feng Zhang; Yingxi Niu; Fei Yang; Xingfang Liu; Lei Wang; Wanshun Zhao; Guosheng Sun; Yiping Zeng 收藏  |  浏览/下载：15/0  |  提交时间：2016/03/29 Nanoscale opening fabrication on Si (111) surface from SiO2 barrier for vertical growth of III-V nanowire arrays 期刊论文  OAI收割 nanotechnology, 2015, 卷号: 26, 期号: 26, 页码: 265302 Tuanwei Shi; Xiaoye Wang; Baojun Wang; Wei Wang; Xiaoguang Yang; Wenyuan Yang; Qing Chen; Hongqi Xu; Shengyong Xu; Tao Yang 收藏  |  浏览/下载：18/0  |  提交时间：2016/03/23 Competitive growth mechanisms of AlN on Si (111) by MOVPE 期刊论文  OAI收割 scientific reports, 2014, 卷号: 4, 页码: 6416 Feng, YX; Wei, HY; Yang, SY; Chen, Z; Wang, LS; Kong, SS; Zhao, GJ; Liu, XL 收藏  |  浏览/下载：21/0  |  提交时间：2015/03/25 Thickness influence of thermal oxide layers on the formation of self-catalyzed InAs nanowires on Si(111) by MOCVD 期刊论文  OAI收割 journal of crystal growth, 2014, 卷号: 395, 页码: 55-60 Wang, XY; Yang, XG; Du, WN; Ji, HM; Luo, S; Yang, T 收藏  |  浏览/下载：14/0  |  提交时间：2015/03/25 The Growth and Fabrication of InGaN_GaN Multi-Quantum Well Solar Cells on Si(111) Substrates 期刊论文  OAI收割 chinese physics letters, 2013, 卷号: 30, 期号: 6, 页码: 068402 LI Zhi-Dong, XIAO Hong-Ling, WANG Xiao-Liang, WANG Cui-Mei, DENG Qing-Wen, JING Liang, DING Jie-Qin, WANG Zhan-Guo, HOU Xun 收藏  |  浏览/下载：17/0  |  提交时间：2014/03/17 Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate 期刊论文  OAI收割 nanoscale research letters, 2013, 卷号: 8, 页码: 27 Li, Tianfeng; Gao, Lizhen; Lei, Wen; Guo, Lijun; Yang, Tao; Chen, Yonghai; Wang, Zhanguo 收藏  |  浏览/下载：13/0  |  提交时间：2013/09/22 The Growth of Semi-Polar ZnO (10(1)over-bar1) on Si (111) Substrates Using a Methanol Oxidant by Metalorganic Chemical Vapor Deposition 期刊论文  OAI收割 chinese physics letters, 2012, 卷号: 29, 期号: 1, 页码: 18101 Sang, L; Wang, J; Shi, K; Wei, HY; Jiao, CM; Liu, XL; Yang, SY; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：10/0  |  提交时间：2013/03/17 Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition 期刊论文  OAI收割 chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: article no.48102 作者:  Pan X;  Hou QF 收藏  |  浏览/下载：83/7  |  提交时间：2011/07/05 ELECTRON-MOBILITY TRANSISTORS  AL-CONTENT  STRESS-CONTROL  PHASE EPITAXY  ALGAN  BUFFER  LAYERS  HETEROSTRUCTURES  INTERLAYERS  SILICON   Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文  OAI收割 journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032 作者:  Pan X 收藏  |  浏览/下载：20/0  |  提交时间：2011/09/14 CHEMICAL-VAPOR-DEPOSITION  PHASE EPITAXY  ALN INTERLAYERS  FILMS  STRESS  LAYERS  DISLOCATIONS  REDUCTION  DENSITY  DIODES   Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 会议论文  OAI收割 16th international conference on crystal growth (iccg16)/14th international conference on vapor growth and epitaxy (icvge14), beijing, peoples r china, aug 08-13, 2010 Pan X (Pan Xu); Wei M (Wei Meng); Yang CB (Yang Cuibai); Xiao HL (Xiao Hongling); Wang CM (Wang Cuimei); Wang XL (Wang Xiaoliang) 收藏  |  浏览/下载：15/0  |  提交时间：2011/07/26