中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  1. CAS IR Grid
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  • 2006 [22]
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  • 光电子学 [22]
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浏览/检索结果: 共22条，第1-10条 帮助

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Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes 期刊论文  OAI收割
journal of applied physics, 2006, 卷号: 100, 期号: 4, 页码: art.no.046101
Li DY (Li D. Y.); Huang YZ (Huang Y. Z.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Ye XJ (Ye X. J.); Chong M (Chong M.); Chen LH (Chen L. H.); Yang H (Yang H.); Liang JW (Liang J. W.)
收藏  |  浏览/下载：45/0  |  提交时间：2010/04/11
Strain evolution in GaN layers grown on high-temperature AlN interlayers 期刊论文  OAI收割
applied physics letters, 2006, 卷号: 89, 期号: 15, 页码: art.no.152105
Wang JF (Wang J. F.); Yao DZ (Yao D. Z.); Chen J (Chen J.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Jiang DS (Jiang D. S.); Yang H (Yang H.); Liang JW (Liang J. W.)
收藏  |  浏览/下载：31/0  |  提交时间：2010/04/11
Effect of oxidation on the optical and surface properties of AlGaN 期刊论文  OAI收割
applied surface science, 2006, 卷号: 252, 期号: 24, 页码: 8706-8709
Wang XL (Wang X. L.); Zhao DG (Zhao D. G.); Chen J (Chen J.); Li XY (Li X. Y.); Gong HM (Gong H. M.); Yang H (Yang H.)
收藏  |  浏览/下载：19/0  |  提交时间：2010/04/11
Effects of grain size on the mosaic tilt and twist in InN films grown on GaN by metal-organic chemical vapor deposition 期刊论文  OAI收割
applied physics letters, 2006, 卷号: 89, 期号: 9, 页码: art.no.092114
Wang H (Wang H.); Huang Y (Huang Y.); Sun Q (Sun Q.); Chen J (Chen J.); Wang LL (Wang L. L.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Zhang SM (Zhang S. M.); Jiang DS (Jiang D. S.); Wang YT (Wang Y. T.); Yang H (Yang H.)
收藏  |  浏览/下载：42/0  |  提交时间：2010/04/11
Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts 期刊论文  OAI收割
applied physics letters, 2006, 卷号: 89, 期号: 3, 页码: art.no.033503
Wang RX (Wang R. X.); Xu SJ (Xu S. J.); Djurisic AB (Djurisic A. B.); Beling CD (Beling C. D.); Cheung CK (Cheung C. K.); Cheung CH (Cheung C. H.); Fung S (Fung S.); Zhao DG (Zhao D. G.); Yang H (Yang H.); Tao XM (Tao X. M.)
收藏  |  浏览/下载：26/0  |  提交时间：2010/04/11
Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth 期刊论文  OAI收割
半导体学报, 2006, 卷号: 27, 期号: 3, 页码: 419-424
作者:  Wang Hui;  Zhang Shuming;  Zhu Jianjun;  Zhao Degang;  Wang Hui
收藏  |  浏览/下载：10/0  |  提交时间：2010/11/23
Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots 期刊论文  OAI收割
applied physics letters, 2006, 卷号: 88, 期号: 8, 页码: art.no.083123
作者:  Zhao DG
收藏  |  浏览/下载：653/4  |  提交时间：2010/04/11
Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au/GaN Schottky contacts 期刊论文  OAI收割
applied physics letters, 2006, 卷号: 89, 期号: 14, 页码: art.no.143505
Wang RX (Wang R. X.); Xu SJ (Xu S. J.); Shi SL (Shi S. L.); Beling CD (Beling C. D.); Fung S (Fung S.); Zhao DG (Zhao D. G.); Yang H (Yang H.); Tao XM (Tao X. M.)
收藏  |  浏览/下载：42/0  |  提交时间：2010/04/11
The effects of LT AlN buffer thickness on the properties of high Al composition AlGaN epilayers 期刊论文  OAI收割
materials letters, 2006, 卷号: 60, 期号: 29-30, 页码: 3693-3696
Wang XL (Wang X. L.); Zhao DG (Zhao D. G.); Li XY (Li X. Y.); Gong HM (Gong H. M.); Yang H (Yang H.); Liang JW (Liang J. W.)
收藏  |  浏览/下载：106/0  |  提交时间：2010/04/11
Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition 期刊论文  OAI收割
journal of crystal growth, 2006, 卷号: 289, 期号: 1, 页码: 72-75
作者:  Jiang DS;  Li XY;  Zhu JJ;  Yang H;  Zhao DG
收藏  |  浏览/下载：95/0  |  提交时间：2010/04/11