机构

• 半导体研究所 [6]

采集方式

• OAI收割 [6]

内容类型

• 期刊论文 [6]

发表日期

• 2010 [6]

学科主题

• 半导体材料 [6]

筛选

浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体材料    发表日期：2010     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density 期刊论文  OAI收割 journal of physics d-applied physics, 2010, 卷号: 43, 期号: 48, 页码: art. no. 485102 Zhou XL (Zhou X. L.); Chen YH (Chen Y. H.); Jia CH (Jia C. H.); Ye XL (Ye X. L.); Xu B (Xu Bo); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：17/0  |  提交时间：2010/12/12 DEPENDENCE  SPECTRA   Characterization and analysis of two-dimensional GaAs-based photonic crystal nanocavities at room temperature 期刊论文  OAI收割 microelectronic engineering, 2010, 卷号: 87, 期号: 10, 页码: 1834-1837 Peng YS (Peng Y. S.); Xu B (Xu B.); Ye XL (Ye X. L.); Niu JB (Niu J. B.); Jia R (Jia R.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：106/27  |  提交时间：2010/08/17 Photonic crystal nanocavities  Quantum dots  Cavity resonant mode  Room temperature   Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure 期刊论文  OAI收割 journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073111 Ding Y (Ding Y.); Fan WJ (Fan W. J.); Ma BS (Ma B. S.); Xu DW (Xu D. W.); Yoon SF (Yoon S. F.); Liang S (Liang S.); Zhao LJ (Zhao L. J.); Wasiak M (Wasiak M.); Czyszanowski T (Czyszanowski T.); Nakwaski W (Nakwaski W.) 收藏  |  浏览/下载：31/0  |  提交时间：2010/11/14 VAPOR-PHASE EPITAXY  PHOTOVOLTAGE SPECTROSCOPY  PHOTOLUMINESCENCE  MODES   Abnormal temperature dependent photoluminescence of self-assembled InAs/GaAs surface quantum dots with high areal density 期刊论文  OAI收割 physica e-low-dimensional systems & nanostructures, 2010, 卷号: 42, 期号: 9, 页码: 2455-2459 Zhou XL (Zhou X. L.); Chen YH (Chen Y. H.); Liu JQ (Liu J. Q.); Xu B (Xu B.); Ye XL (Ye X. L.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：264/60  |  提交时间：2010/09/07 Quantum dots  Temperature dependent  Photoluminescence  Surface localized centers   Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy 期刊论文  OAI收割 nanoscale research letters, 2010, 卷号: 5, 期号: 8, 页码: 1340-1343 Liu JM (Liu J. M.); Liu XL (Liu X. L.); Xu XQ (Xu X. Q.); Wang J (Wang J.); Li CM (Li C. M.); Wei HY (Wei H. Y.); Yang SY (Yang S. Y.); Zhu QS (Zhu Q. S.); Fan YM (Fan Y. M.); Zhang XW (Zhang X. W.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：144/21  |  提交时间：2010/08/17 Valence band offset  w-InN/h-BN heterojunction  X-ray photoelectron spectroscopy  Conduction band offset  Valence band offset  NEGATIVE ELECTRON-AFFINITY  INDIUM NITRIDE  WURTZITE GAN  SURFACE  FILM  ALN  TRANSPORT  EMISSION  NAXWO3  GROWTH   Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density 期刊论文  OAI收割 journal of physics d-applied physics, 2010, 卷号: 43, 期号: 29, 页码: art. no. 295401 Zhou XL (Zhou X. L.); Chen YH (Chen Y. H.); Liu JQ (Liu J. Q.); Jia CH (Jia C. H.); Zhou GY (Zhou G. Y.); Ye XL (Ye X. L.); Xu B (Xu Bo); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：336/26  |  提交时间：2010/08/17 CARRIER RELAXATION  STATES  SUPERLATTICES  CONFINEMENT  LASER