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浏览/检索结果: 共19条，第1-10条 帮助

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Sub-400 degrees C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS 期刊论文  OAI收割
ieee transactions on electron devices, 2013, 卷号: 60, 期号: 5, 页码: 1640-1648
Gong, Xiao; Han, Genquan; Liu, Bin; Wang, Lanxiang; Wang, Wei; Yang, Yue; Kong, Eugene Yu-Jin; Su, Shaojian; Xue, Chunlai); Cheng, Buwen; Yeo, Yee-Chia
收藏  |  浏览/下载：20/0  |  提交时间：2013/08/27
Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation 期刊论文  OAI收割
solid-state electronics, 2013, 卷号: 83, 页码: 66-70
Wang, Lanxiang; Su, Shaojian; Wang, Wei; Gong, Xiao; Yang, Yue; Guo, Pengfei; Zhang, Guangze; Xue, Chunlai; Cheng, Buwen; Han, Genquan; Yeo, Yee-Chia
收藏  |  浏览/下载：19/0  |  提交时间：2013/08/27
Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 degrees C Si2H6 Passivation 期刊论文  OAI收割
ieee electron device letters, 2013, 卷号: 34, 期号: 3, 页码: 339-341
Gong, Xiao; Han, Genquan; Bai, Fan; Su, Shaojian; Guo, Pengfei; Yang, Yue; Cheng, Ran; Zhang, Dongliang; Zhang, Guangze; Xue, Chunlai; Cheng, Buwen; Pan, Jisheng; Zhang, Zheng; Tok, Eng Soon; Antoniadis, Dimitri; Yeo, Yee-Chia
收藏  |  浏览/下载：28/0  |  提交时间：2013/09/17
Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer 期刊论文  OAI收割
chin. phys. lett., Chin. Phys. Lett., 2013, 2013, 卷号: 30, 30, 期号: 11, 页码: 118501, 118501
作者:  SU Shao-Jian, HAN Gen-Quan, ZHANG Dong-Liang, ZHANG Guang-Ze, XUE Chun-Lai, WANG Qi-Ming, CHENG Bu-Wen
  |  收藏  |  浏览/下载：33/0  |  提交时间：2014/04/04
Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation 期刊论文  OAI收割
Solid-State Electronics, Solid-State Electronics, 2013, 2013, 卷号: 83, 83, 页码: 66–70, 66–70
作者:  Lanxiang Wang, Shaojian Su, Wei Wang, Xiao Gong, Yue Yang, Pengfei Guo, Guangze Zhang, Chunlai Xue, Buwen Cheng, Genquan Han, Yee-Chia Yeo
  |  收藏  |  浏览/下载：28/0  |  提交时间：2014/04/04
Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N+/P junction formation and GeSnO2 interfacial layer 期刊论文  OAI收割
digest of technical papers - symposium on vlsi technology, 2012, 页码: 97-98
Han, Genquan; Su, Shaojian; Wang, Lanxiang; Zhang, Zheng; Xue, Chunlai; Cheng, Buwen; Yeo, Yee-Chia; Wang, Wei; Gong, Xiao; Yang, Yue; Ivana; Guo, Pengfei; Guo, Cheng; Zhang, Guangze; Pan, Jisheng
收藏  |  浏览/下载：24/0  |  提交时间：2013/05/07
Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor 期刊论文  OAI收割
international symposium on vlsi technology, systems, and applications, proceedings, 2012, 页码: 6210151
Wang, Lanxiang; Han, Genquan; Su, Shaojian; Cheng, Buwen; Yeo, Yee-Chia; Zhou, Qian; Yang, Yue; Guo, Pengfei; Wang, Wei; Tong, Yi; Lim, Phyllis Shi Ya; Xue, Chunlai; Wang, Qiming
收藏  |  浏览/下载：29/0  |  提交时间：2013/05/07
Structural and optoelectronic properties of selenium-doped silicon formed using picosecond pulsed laser mixing 期刊论文  OAI收割
physica status solidi (a) applications and materials science, 2012, 卷号: 209, 期号: 12, 页码: 2521-2526
Hu, Shaoxu; Han, Peide; Wang, Shuai; Mao, Xue; Li, Xinyi; Gao, Lipeng
收藏  |  浏览/下载：17/0  |  提交时间：2013/05/07
Dopant Segregation and Nickel Stanogermanide Contact Formation on p(+) Ge0.947Sn0.053 Source/Drain 期刊论文  OAI收割
ieee electron device letters, 2012, 卷号: 33, 期号: 5, 页码: 634-636
Han, GQ; Su, SJ; Zhou, Q; Guo, PF; Yang, Y; Zhan, CL; Wang, LX; Wang, W; Wang, QM; Xue, CL; Cheng, BW; Yeo, YC
收藏  |  浏览/下载：19/0  |  提交时间：2013/03/17
Plasmon enhanced magneto-optical effect on surface of pure gold film 期刊论文  OAI收割
guangxue jingmi gongcheng/optics and precision engineering, 2012, 卷号: 20, 期号: 7, 页码: 1525-1531
Xiong, Shang; Luo, Xue-Feng; Han, Li
收藏  |  浏览/下载：14/0  |  提交时间：2013/05/13