机构

• 半导体研究所 [11]

采集方式

• OAI收割 [11]

内容类型

• 期刊论文 [11]

发表日期

• 2008 [3]
• 2007 [3]
• 2006 [4]
• 2005 [1]

学科主题

• 半导体材料 [11]

筛选

浏览/检索结果: 共11条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Effects of disk rotation rate on the growth of ZnO films by low-pressure metal-organic chemical vapor deposition 期刊论文  OAI收割 thin solid films, 2008, 卷号: 516, 期号: 6, 页码: 925-928 Zhang, PF; Wei, HY; Cong, GW; Hu, WG; Fan, HB; Wu, JJ; Zhu, QS; Liu, XL 收藏  |  浏览/下载：28/3  |  提交时间：2010/03/08 X-ray diffraction  metal-organic chemical vapor deposition  zinc oxide  structural properties   Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111) 期刊论文  OAI收割 physica status solidi a-applications and materials science, 2008, 卷号: 205, 期号: 2, 页码: 294-299 Wu, JJ; Zhao, LB; Zhang, GY; Liu, XL; Zhu, QS; Wang, ZG; Jia, QJ; Guo, LP; Hu, TD 收藏  |  浏览/下载：65/3  |  提交时间：2010/03/08 CHEMICAL-VAPOR-DEPOSITION  TEMPERATURE ALN INTERLAYERS  PHASE EPITAXY  OPTICAL-PROPERTIES  SURFACTANT  SUBSTRATE  STRESS  SI  REDUCTION  SAPPHIRE   Influence of different interlayers on growth mode and properties of InN by MOVPE 期刊论文  OAI收割 chinese physics letters, 2008, 卷号: 25, 期号: 1, 页码: 238-241 Zhang, RQ; Liu, XL; Kang, TT; Hu, WG; Yang, SY; Jiao, CM; Zhu, QS 收藏  |  浏览/下载：51/3  |  提交时间：2010/03/08 DEFECT STRUCTURE  EPITAXIAL GAN  BAND-GAP   ZnO nanostructures grown on AlN/sapphire substrates by MOCVD 期刊论文  OAI收割 chinese physics letters, 2007, 卷号: 24, 期号: 6, 页码: 1738-1740 Wei HY (Wei Hong-Yuan); Hu WG (Hu Wei-Guo); Zhang PF (Zhang Pan-Feng); Liu XL (Liu Xiang-Lin); Zhu QS (Zhu Qin-Sheng); Wang ZG (Wang Zhau-Guo) 收藏  |  浏览/下载：124/0  |  提交时间：2010/03/29 OPTICAL-PROPERTIES   Combined structure of ZnO vertical well-aligned nanorods and net-like structures on AIN/sapphire 期刊论文  OAI收割 journal of crystal growth, 2007, 卷号: 306, 期号: 1, 页码: 12-15 Wei, HY (Wei, H. Y.); Cong, GW (Cong, G. W.); Zhang, PF (Zhang, P. F.); Hu, WG (Hu, W. G.); Wu, JJ (Wu, J. J.); Jiao, CM (Jiao, C. M.); Liu, XL (Liu, X. L.); Zhu, QS (Zhu, Q. S.); Wang, ZG (Wang, Z. G.) 收藏  |  浏览/下载：21/0  |  提交时间：2010/03/29 nanostructure   Using different carrier gases to control AlN film stress and the effect on morphology, structural properties and optical properties 期刊论文  OAI收割 journal of physics d-applied physics, 2007, 卷号: 40, 期号: 23, 页码: 7462-7466 Hu, WG; Liu, XL; Jiao, CM; Wei, HY; Kang, TT; Zhang, PF; Zhang, RQ; Fan, HB; Zhu, QS 收藏  |  浏览/下载：54/4  |  提交时间：2010/03/08 VAPOR-PHASE EPITAXY  WURTZITE-TYPE CRYSTALS  THIN-FILMS  ALUMINUM NITRIDE  INTRINSIC STRESS  GAN  SAPPHIRE  AIN  DEPOSITION  STRAIN   Comparison of valence band x-ray photoelectron spectrum between Al-N-codoped and N-doped ZnO films 期刊论文  OAI收割 applied physics letters, 2006, 卷号: 88, 期号: 6, 页码: art.no.602110 作者:  Han XX;  Wei HY 收藏  |  浏览/下载：709/6  |  提交时间：2010/04/11 P-TYPE CONDUCTION  THIN-FILMS  OHMIC CONTACTS   Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates 期刊论文  OAI收割 nanotechnology, 2006, 卷号: 17, 期号: 5, 页码: 1251-1254 作者:  Wei HY 收藏  |  浏览/下载：59/0  |  提交时间：2010/04/11 OPTICAL-PROPERTIES  RAMAN-SCATTERING  EPILAYERS  LUMINESCENCE  ALINGAN  PHONON  LAYERS  FILMS  ALN  GAN   Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition 期刊论文  OAI收割 optical materials, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231 Wu JJ (Wu Jiejun); Han XX (Han Xiuxun); Li JM (Li Jiemin); Wei HY (Wei Hongyuan); Cong GW (Cong Guangwei); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Jia QJ (Jia Quanjie); Guo LP (Guo Liping); Hu TD (Hu Tiandou); Wang HH (Wang Huanhua) 收藏  |  浏览/下载：48/0  |  提交时间：2010/04/11 in doping  cracks  Si(111) substrate  LT-AlGaN interlayer  metalorganic chemical vapor deposition  GaN  PHASE EPITAXY  INDIUM-SURFACTANT  OPTICAL-PROPERTIES  SI(111)  STRESS  FILMS   Aluminium doping induced enhancement of p-d coupling in ZnO 期刊论文  OAI收割 journal of physics-condensed matter, 2006, 卷号: 18, 期号: 11, 页码: 3081-3087 作者:  Han XX;  Wei HY 收藏  |  浏览/下载：43/0  |  提交时间：2010/04/11 ELECTRONIC-STRUCTURE CALCULATIONS  II-VI SEMICONDUCTORS  THIN-FILMS  PHOTOELECTRON-SPECTROSCOPY  DOPED ZNO  1ST-PRINCIPLES  CONDUCTION  STATES