中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [11]
采集方式
OAI收割 [11]
内容类型
期刊论文 [11]
发表日期
2016 [11]
学科主题
半导体物理 [10]
半导体材料 [1]
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发表日期:2016
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Characterization of background carriers in InAs/GaSb quantum well
期刊论文
OAI收割
journal of applied physics, 2016, 卷号: 119, 期号: 9, 页码: 095710
Junbin Li
;
Xiaoguang Wu
;
Guowei Wang
;
Yingqiang Xu
;
Zhichuan Niu
;
Xinhui Zhang
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2017/03/16
Photoexcitation-induced carrier dynamics in an undoped InAs/GaSb quantum well
期刊论文
OAI收割
journal of physics d: applied physics, 2016, 卷号: 49, 期号: 14, 页码: 145303
Junbin Li
;
Xiaoguang Wu
;
Guowei Wang
;
Yingqiang Xu
;
Zhichuan Niu
;
Xinhui Zhang
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2017/03/16
Short-wave infrared detector with double barrier structure and low dark current density
期刊论文
OAI收割
chinese optics letters, 2016, 卷号: 14, 期号: 2, 页码: 022501
Kangming Pei
;
Zhongtao Qiao
;
Jianhui Chen
;
Fengqi Gao
;
Baochen Li
;
Zhichuan Niu
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2017/03/10
Low lateral divergence 2 μm InGaSb/ AlGaAsSb broad-area quantum well lasers
期刊论文
OAI收割
Optics Express, 2016, 卷号: 24, 期号: 7, 页码: 7246-7252
Jiamin Rong
;
Enbo Xing
;
Yu Zhang
;
Lijie Wang
;
Shili Shu
;
Sicong Tian
;
Cunzhu Tong
;
Xiaoli Chai
;
Yingqiang Xu
;
Haiqiao Ni
;
Zhichuan Niu
;
Lijun Wang
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2017/03/10
Photoexcitation-induced carrier dynamics in an undoped InAs/GaSb quantum well
期刊论文
OAI收割
journal of physics d: applied physics, 2016, 卷号: 49, 页码: 145303
Junbin Li
;
Xiaoguang Wu
;
Guowei Wang
;
Yingqiang Xu
;
Zhichuan Niu
;
Xinhui Zhang
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2017/03/16
Very high quantum efficiency in InAs/GaSb superlattice for very long wavelength detection with cutoff of 21 µm
期刊论文
OAI收割
applied physics letters, 2016, 卷号: 108, 期号: 12, 页码: 121110
Dongwei Jiang
;
Wei Xiang
;
Fengyun Guo
;
Hongyue Hao
;
Xi Han
;
Xiaochao Li
;
Guowei Wang
;
Yingqiang Xu
;
Qingjiang Yu
;
Zhichuan Niu
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2017/03/10
InAs homoepitaxy and InAs/AlSb/GaSb resonant interband tunneling diodes on InAs substrate
期刊论文
OAI收割
journal of crystal growth, 2016, 卷号: 443, 页码: 85-89
Wei Xiang
;
Guowei Wang
;
Hongyue Hao
;
Yongping Liao
;
Xi Han
;
Lichun Zhang
;
Yingqiang Xu
;
Zhengwei Ren
;
Haiqiao Ni
;
Zhenhong He
;
Zhichuan Niu
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2017/03/16
Tuning exciton energy and fine-structure splitting in single InAs quantum dots by applying uniaxial stress
期刊论文
OAI收割
aip advances, 2016, 卷号: 6, 期号: 4, 页码: 045204
Dan Su
;
Xiuming Dou
;
Xuefei Wu
;
Yongping Liao
;
Pengyu Zhou
;
Kun Ding
;
Haiqiao Ni
;
Zhichuan Niu
;
Haijun Zhu
;
Desheng Jiang
;
Baoquan Sun
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2017/03/16
Design and Analysis of 2-µm InGaSb/GaSb Quantum Well Lasers Integrated onto Silicon-on-Insulator (SOI) Waveguide Circuits through an Al2O3 Bonding Layer
期刊论文
OAI收割
ieee journal of selected topics in quantum electronics, 2016, 卷号: 22, 期号: 6
Xiang Li
;
Hong Wang
;
Zhongliang Qiao
;
Yu Zhang
;
Zhichuan Niu
;
Cunzhu Tong
;
Chongyang Liu
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2017/03/16
GaInSb/InAs/AlSb quantum wells with InSb- and GaAs-like interfaces investigated by temperature- and magnetic field-dependent photoluminescence
期刊论文
OAI收割
journal of applied physics, 2016, 卷号: 119, 期号: 17, 页码: 175301
Xiren Chen
;
Junliang Xing
;
Liangqing Zhu
;
F.-X. Zha
;
Zhichuan Niu
;
Shaoling Guo
;
Jun Shao
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2017/03/16