中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [6]
采集方式
OAI收割 [6]
内容类型
期刊论文 [5]
会议论文 [1]
发表日期
2016 [1]
2015 [1]
2010 [1]
2007 [2]
2006 [1]
学科主题
半导体物理 [6]
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Helicity-dependent photocurrent induced by the in-plane transverse electric current in an InAs quantum well
期刊论文
OAI收割
scientific reports, 2016, 卷号: 6, 页码: 31189
J. B. Li
;
X. G. Wu
;
G. W. Wang
;
Y. Q. Xu
;
Z. C. Niu
;
X. H. Zhang
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2017/03/16
Coupling and single-photon purity of a quantum dot-cavity system studied using hydrostatic pressure
期刊论文
OAI收割
journal of applied physics, 2015, 卷号: 117, 期号: 1, 页码: 014304
P. Y. Zhou
;
X. F. Wu
;
K. Ding
;
X. M. Dou
;
G. W. Zha
;
H. Q. Ni
;
Z. C. Niu
;
H. J. Zhu
;
D. S. Jiang
;
C. L. Zhao
;
B. Q. Sun
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2016/03/29
The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots
期刊论文
OAI收割
journal of optics, JOURNAL OF OPTICS, 2010, 2010, 卷号: 12, 12, 期号: 5, 页码: art. no. 055203, Art. No. 055203
作者:
Huang X (Huang X.)
;
Zhang XH (Zhang X. H.)
;
Zhu YG (Zhu Y. G.)
;
Li T (Li T.)
;
Han LF (Han L. F.)
  |  
收藏
  |  
浏览/下载:77/6
  |  
提交时间:2010/08/17
InAs quantum dots
Inas Quantum Dots
Nonlinear Refraction
Reflection Z-scan
Dc Electric Field Effect
Electrooptic Properties
Saturable Absorber
Optical-properties
Well Structures
Single-beam
Band-gap
Electroabsorption
Absorption
Reflection
Dependence
nonlinear refraction
reflection Z-scan
dc electric field effect
ELECTROOPTIC PROPERTIES
SATURABLE ABSORBER
OPTICAL-PROPERTIES
WELL STRUCTURES
SINGLE-BEAM
BAND-GAP
ELECTROABSORPTION
ABSORPTION
REFLECTION
DEPENDENCE
Application of rapid thermal annealing on 1.3-1.55 mu m GaInNAs(Sb) lasers grown by molecular beam epitaxy
期刊论文
OAI收割
journal of crystal growth, 2007, 卷号: 301, 期号: 0, 页码: 979-983
Zhao, H (Zhao, H.)
;
Xu, YQ (Xu, Y. Q.)
;
Ni, HQ (Ni, H. Q.)
;
Zhang, SY (Zhang, S. Y.)
;
Han, Q (Han, Q.)
;
Du, Y (Du, Y.)
;
Yang, XH (Yang, X. H.)
;
Wu, RH (Wu, R. H.)
;
Niu, ZC (Niu, Z. C.)
收藏
  |  
浏览/下载:55/0
  |  
提交时间:2010/03/29
photoluminescence
Rapid photoluminescence quenching in GaInNAs quantum wells at low temperature
期刊论文
OAI收割
journal of luminescence, 2007, 卷号: 122 sp.iss.si, 期号: 0, 页码: 188-190
Sun, Z (Sun, Z.)
;
Yang, XD (Yang, X. D.)
;
Sun, BQ (Sun, B. Q.)
;
Ji, Y (Ji, Y.)
;
Zhang, SY (Zhang, S. Y.)
;
Ni, HQ (Ni, H. Q.)
;
Niu, ZC (Niu, Z. C.)
;
Xu, ZY (Xu, Z. Y.)
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2010/03/29
GaInNAs/GaAs
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z
会议论文
OAI收割
conference on ultrafast phenomena in semiconductors and nanostructure materials x, san jose, ca, jan 23-25, 2006
Sun, Z (Sun, Z.)
;
Xu, ZY (Xu, Z. Y.)
;
Yang, XD (Yang, X. D.)
;
Sun, BQ (Sun, B. Q.)
;
Ji, Y (Ji, Y.)
;
Zhang, SY (Zhang, S. Y.)
;
Ni, HQ (Ni, H. Q.)
;
Niu, ZC (Niu, Z. C.)
收藏
  |  
浏览/下载:182/36
  |  
提交时间:2010/03/29
GaInNAs/GaAs quantum wells
optical properties
nonradiative recombination effect
time-resolved photoluminescence
PL decay dynamics
PL thermal quenching
MOLECULAR-BEAM EPITAXY
GAASN ALLOYS
EXCITATION