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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [14]
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OAI收割 [14]
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期刊论文 [12]
会议论文 [2]
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2012 [1]
2003 [1]
2002 [5]
2001 [3]
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1999 [2]
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学科主题
半导体材料 [14]
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20 W High-Power Picosecond Single-Walled Carbon Nanotube Based MOPA Laser System
期刊论文
OAI收割
journal of lightwave technology, JOURNAL OF LIGHTWAVE TECHNOLOGY, 2012, 2012, 卷号: 30, 30, 期号: 16, 页码: 2713-2717, 2713-2717
作者:
Zhang L (Zhang, Ling)
;
Wang YG (Wang, Yong Gang)
;
Yu HJ (Yu, Hai Juan)
;
Sun W (Sun, Wei)
;
Yang YY (Yang, Ying Ying)
  |  
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2013/04/02
Method for measurement of lattice parameter of cubic GaN layers on GaAs (001)
期刊论文
OAI收割
journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 345-348
Zheng XH
;
Wang YT
;
Feng ZH
;
Yang H
;
Chen H
;
Zhou JM
;
Liang JW
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2010/08/12
in-plane strain
lattice parameters
triple-axis diffraction
c-GaN
GROWTH
FILMS
Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth
期刊论文
OAI收割
science in china series a-mathematics physics astronomy, 2002, 卷号: 45, 期号: 11, 页码: 1461-1467
作者:
Zhao DG
收藏
  |  
浏览/下载:68/0
  |  
提交时间:2010/08/12
GaN
epitaxial lateral overgrowth
crystallographic tilt
double crystal X-ray diffraction
FILMS
DEFECTS
GAAS
Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate
期刊论文
OAI收割
science in china series e-technological sciences, 2002, 卷号: 45, 期号: 3, 页码: 255-260
作者:
Zhang SM
;
Zhao DG
收藏
  |  
浏览/下载:84/5
  |  
提交时间:2010/08/12
wafer bonding
cubic
GaN/GaAs(001)
Si-substrate
LIGHT-EMITTING-DIODES
P-TYPE GAN
RESISTANCE
CONTACT
LASER
Structural characterization of epitaxial lateral overgrown GaN on patterned GaN/GaAs(001) substrates
期刊论文
OAI收割
journal of crystal growth, 2002, 卷号: 246, 期号: 1-2, 页码: 69-72
Shen XM
;
Fu Y
;
Feng G
;
Zhang BS
;
Feng ZH
;
Wang YT
;
Yang H
收藏
  |  
浏览/下载:46/0
  |  
提交时间:2010/08/12
transmission electron microscopy
X-ray diffraction
epitaxial lateral overgrowth
metalorganic vapor phase epitaxy
cubic gallium nitride
CHEMICAL-VAPOR-DEPOSITION
CUBIC GAN
PHASE EPITAXY
REDUCTION
GROWTH
Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping
期刊论文
OAI收割
journal of crystal growth, 2002, 卷号: 235, 期号: 1-4, 页码: 207-211
作者:
Zhang SM
收藏
  |  
浏览/下载:92/4
  |  
提交时间:2010/08/12
crystal morphology
doping
surface structure
metalorgamc chemical vapor deposition
nitrides
semiconducting III-V materials
MOLECULAR-BEAM EPITAXY
PHASE EPITAXY
FILMS
CATHODOLUMINESCENCE
Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD
期刊论文
OAI收割
journal of crystal growth, 2002, 卷号: 242, 期号: 1-2, 页码: 124-128
Zheng XH
;
Feng ZH
;
Wang YT
;
Zheng WL
;
Jia QJ
;
Jiang XM
;
Yang H
;
Liang JW
收藏
  |  
浏览/下载:124/0
  |  
提交时间:2010/08/12
nucleation layers
X-ray diffraction
metalorganic chemical vapor deposition
gallium compounds
nitrides
LIGHT-EMITTING-DIODES
CHEMICAL-VAPOR-DEPOSITION
AIN BUFFER LAYER
GROWN GAN
SAPPHIRE SUBSTRATE
QUALITY
FILMS
BLUE
TEMPERATURE
EVOLUTION
X-Ray diffraction determination of the fractions of hexagonal and twinned phases in cubic GaN layers grown on (001)GaAs substrate
期刊论文
OAI收割
thin solid films, 2001, 卷号: 392, 期号: 1, 页码: 29-33
Qu B
;
Zheng XH
;
Wang YT
;
Feng ZH
;
Liu SA
;
Lin SM
;
Yang H
;
Liang JW
收藏
  |  
浏览/下载:101/13
  |  
提交时间:2010/08/12
gallium nitride
X-ray diffraction
EPITAXY
RATIO
Investigation of {111}A and {111} planes of c-GaN epilayers grown on GaAs(001) by MOCVD
期刊论文
OAI收割
journal of crystal growth, 2001, 卷号: 233, 期号: 1-2, 页码: 52-56
Zheng XH
;
Qu B
;
Wang YT
;
Feng ZH
;
Han JY
;
Yang H
;
Liang JW
收藏
  |  
浏览/下载:102/12
  |  
提交时间:2010/08/12
X-ray diffraction
metalorganic chemical vapor deposition
gallium compounds
HEXAGONAL GAN
CUBIC GAN
GAAS
Epitaxial lateral overgrowth of cubic GaN by metalorganic chemical vapor deposition
期刊论文
OAI收割
journal of crystal growth, 2001, 卷号: 225, 期号: 1, 页码: 45-49
作者:
Zhao DG
收藏
  |  
浏览/下载:131/40
  |  
提交时间:2010/08/12
photoluminescence
SEM
epitaxial lateral overgrowth
metalorganic chemical vapor deposition
cubic GaN
PHASE EPITAXY
SELECTIVE GROWTH
LASER-DIODES
LAYERS