中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 微电子研究所 [17]
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Understanding dipole formation at dielectric/dielectric hetero-interface 期刊论文  OAI收割
APPLIED PHYSICS LETTERS, 2018
作者:  
Wang YR(王艳蓉);  Xiang JJ(项金娟);  Yang H(杨红);  Jing Zhang;  Zhao C(赵超)
  |  收藏  |  浏览/下载:38/0  |  提交时间:2019/05/20
Identification of interfacial defects in a Ge gate stack based on ozone passivation 期刊论文  OAI收割
Semiconductor Science and Technology, 2018
作者:  
  |  收藏  |  浏览/下载:37/0  |  提交时间:2019/05/20
Improved Ti germanosilicidation by Ge pre-amorphization implantation (PAI) for advanced contact technologies 期刊论文  OAI收割
Microelectronic Engineering, 2018
作者:  
Mao SJ(毛淑娟);  Wang GL(王桂磊);  Xu J(许静);  Zhang D(张丹);  Luo X(罗雪)
  |  收藏  |  浏览/下载:45/0  |  提交时间:2019/05/05
Comprehensive investigation of the interfacial charges and dipole in GeOx/Al2O3 gate 期刊论文  OAI收割
Japanese Journal of Applied Physics, 2018
作者:  
Wang YR(王艳蓉);  Xiang JJ(项金娟);  Yang H(杨红);  Zhang J(张静);  Zhao C(赵超)
  |  收藏  |  浏览/下载:29/0  |  提交时间:2019/05/20
Characteristics of Single Event Upsets induced by Heavy Ions in 28nm UTBB-FDSOI SRAM with Several Types of Radiation Harden Bit-cells 会议论文  OAI收割
作者:  
Bo Mei;  Qingkui Yu;  Yong Ge;  Yi Sun;  Hongwei Zhang
  |  收藏  |  浏览/下载:19/0  |  提交时间:2019/05/10
Impact of Ge Preamorphization Implantation on Both the Formation of Ultrathin TiSix and the Specific Contact Resistivity in TiSix/n-Si Contacts 期刊论文  OAI收割
IEEE Transactions on Electron Devices, 2018
作者:  
Ye TC(叶甜春);  Mao SJ(毛淑娟);  Wang GL(王桂磊);  Xu J(许静);  Luo X(罗雪)
  |  收藏  |  浏览/下载:36/0  |  提交时间:2019/05/05
Dry Etching of Metal Inserted Poly-Si Stack for Dual High-k and Dual Metal Gate Integration 期刊论文  OAI收割
ECS Journal of Solid State Science and Technology, 2018
作者:  
Wang WW(王文武);  jing Zhang;  Xu QX(徐秋霞);  Li YL(李永亮)
  |  收藏  |  浏览/下载:25/0  |  提交时间:2019/05/05
Fabrication Technique for pMOSFET poly-SiTaNTiNHfSiAlON 期刊论文  OAI收割
ECS Journal of Solid State Science and Technology, 2018
作者:  
  |  收藏  |  浏览/下载:9/0  |  提交时间:2019/05/05
Physical Insights on Quantum Confinement and Carrier Mobility in Si, Si0.45Ge0.55, Ge Gate-All-Around NSFET for 5 nm Technology Node 期刊论文  OAI收割
Journal of the Electron Devices Society, 2018
作者:  
Gu J(顾杰);  Wen Yang;  Wu ZH(吴振华);  Yin HX(殷华湘);  Wang WW(王文武)
  |  收藏  |  浏览/下载:30/0  |  提交时间:2019/05/05
Design and Implementation of a Compact 3D Stacked RF Front-End Module for Micro Base Station 期刊论文  OAI收割
IEEE Transactions on Components Packaging and Manufacturing Technology, 2018
作者:  
Wan LX(万里兮);  Tian GX(田更新);  Li J(李君);  Hou FZ(侯峰泽);  Zhang WW(张文雯)
  |  收藏  |  浏览/下载:26/0  |  提交时间:2019/04/25