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  • 光电子学 [180]
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Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes 期刊论文  OAI收割
Scientific Reports, 2017, 卷号: 7, 页码: 44850
Authors:  J. Yang;  D. G. Zhao;  D. S. Jiang;  P. Chen;  J. J. Zhu
  |  Favorite  |  View/Download：19/0  |  Submit date：2018/11/30
Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region 期刊论文  OAI收割
OPTICS EXPRESS, 2017, 卷号: 25, 期号: 9, 页码: 9595-9602
Authors:  J. YANG;  D. G. ZHAO;  D. S. JIANG;  X. LI;  F. LIANG
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Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes 期刊论文  OAI收割
IEEE Photonics Journal, 2017, 卷号: 9, 期号: 2, 页码: 2300108
Authors:  Jing Yang;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Jianjun Zhu
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Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3 期刊论文  OAI收割
Superlattices and Microstructures, 2017, 卷号: 102, 期号: 2017, 页码: 35-39
Authors:  J. Yang;  D.G. Zhao;  D.S. Jiang;  P. Chen;  J.J. Zhu
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High Coupling Efficiency of the Fiber-Coupled Module Based on Photonic-Band-Crystal Laser Diodes 期刊论文  OAI收割
CHIN. PHYS. LETT., 2017, 卷号: 34, 期号: 7, 页码: 074205
Authors:  Yang Chen;  Yu-Fei Wang;  Hong-Wei Qu;  Yu-Fang Zhang;  Yun Liu
Favorite  |  View/Download：30/0  |  Submit date：2018/07/02
Suppression of hole leakage by adding a hole blocking layer prior to the first quantum barrier in GaN-based near-ultraviolet laser diodes 期刊论文  OAI收割
Phys. Status Solidi A, 2017, 卷号: 214, 期号: 10, 页码: 1700320
Authors:  Yao Xing;  De Gang Zhao;  De Sheng Jiang;  Xiang Li;  Feng Liang
Favorite  |  View/Download：31/0  |  Submit date：2018/07/11
Comparative study on the InGaN multiple-quantum-well solar cells assisted by capacitance-voltage measurement with additional laser illumination 期刊论文  OAI收割
Journal of Alloys and Compounds, 2017, 卷号: 725, 期号: 2017, 页码: 1130-1135
Authors:  Wei Liu;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Dongping Shi
Favorite  |  View/Download：21/0  |  Submit date：2018/07/11
Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells 期刊论文  OAI收割
IEEE JOURNAL OF PHOTOVOLTAICS, 2017, 卷号: 7, 期号: 4, 页码: 1017-1023
Authors:  Wei Liu;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Dongping Shi
Favorite  |  View/Download：23/0  |  Submit date：2018/07/11
Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文  OAI收割
Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466
Authors:  X. LI;  Z. S. LIU;  D. G. ZHAO;  D. S. JIANG;  P. CHEN
Favorite  |  View/Download：17/0  |  Submit date：2018/07/11
Suppression of optical field leakage to GaN substrate in GaN-based green laser diode 期刊论文  OAI收割
Superlattices and Microstructures, 2017, 卷号: 102, 期号: 2017, 页码: 484-489
Authors:  Feng Liang;  Degang Zhao;  Desheng Jiang;  Zongshun Liu;  Jianjun Zhu
Favorite  |  View/Download：26/0  |  Submit date：2018/07/11