机构

• 半导体研究所 [11]

采集方式

• OAI收割 [11]

内容类型

• 期刊论文 [7]
• 会议论文 [4]

发表日期

• 2017 [2]
• 2012 [1]
• 2011 [1]
• 2010 [1]
• 2007 [4]
• 2006 [2]
• 更多

学科主题

• 半导体材料 [11]

筛选

浏览/检索结果: 共11条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Reversible transition between coherently strained BiFeO3 and the metastable pseudotetragonal phase on (LaAlO3)0.3(Sr2AlTaO6)0.7 (001) 期刊论文  OAI收割 JOURNAL OF APPLIED PHYSICS, 2017, 卷号: 121, 页码: 054102 作者:  Z. Fu;  Z. G. Yin;  X. W. Zhang;  N. F. Chen;  Y. J. Zhao 收藏  |  浏览/下载：33/0  |  提交时间：2018/05/30 A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended SiWafer by Conventional Chemical Vapor Deposition 期刊论文  OAI收割 ECS Journal of Solid State Science and Technology, 2017, 卷号: 6, 期号: 1, 页码: 27-31 作者:  X. F. Liu;  z G. G. Yan;  Z. W. Shen;  Z. X.Wen;  L. X. Tian 收藏  |  浏览/下载：32/0  |  提交时间：2018/06/15 Index-coupled surface porous grating distributed feedback quantum cascade laser 期刊论文  OAI收割 journal of applied physics, 2012, 卷号: 112, 期号: 10, 页码: 103102 Zhang JC (Zhang, J. C.); Liu FQ (Liu, F. Q.); Zhao LH (Zhao, L. H.); Wang LJ (Wang, L. J.); Yao DY (Yao, D. Y.); Zhai SQ (Zhai, S. Q.); Liu JQ (Liu, J. Q.); Wang ZG (Wang, Z. G.) 收藏  |  浏览/下载：12/0  |  提交时间：2013/03/26 Continuous-wave operation of distributed-feedback quantum cascade laser with ultra-low threshold current density 期刊论文  OAI收割 electronics letters, 2011, 卷号: 47, 期号: 24, 页码: 1338-u56 Zhang JC (Zhang J. C.); Wang LJ (Wang L. J.); Chen JY (Chen J. Y.); Zhao LH (Zhao L. H.); Liu FQ (Liu F. Q.); Liu JQ (Liu J. Q.); Li L (Li L.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：15/0  |  提交时间：2012/02/22 Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure 期刊论文  OAI收割 journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073111 Ding Y (Ding Y.); Fan WJ (Fan W. J.); Ma BS (Ma B. S.); Xu DW (Xu D. W.); Yoon SF (Yoon S. F.); Liang S (Liang S.); Zhao LJ (Zhao L. J.); Wasiak M (Wasiak M.); Czyszanowski T (Czyszanowski T.); Nakwaski W (Nakwaski W.) 收藏  |  浏览/下载：31/0  |  提交时间：2010/11/14 VAPOR-PHASE EPITAXY  PHOTOVOLTAGE SPECTROSCOPY  PHOTOLUMINESCENCE  MODES   Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers 会议论文  OAI收割 33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006 Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Li, JM (Li, J. M.); Ning, J (Ning, J.); Zhao, YM (Zhao, Y. M.); Luo, MC (Luo, M. C.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Zeng, YP (Zeng, Y. P.) 收藏  |  浏览/下载：88/9  |  提交时间：2010/03/29 AVALANCHE PHOTODIODES  AREA   Identification of vacancies in electron irradiated GaSb by coincidence Doppler broadening spectroscopy 期刊论文  OAI收割 materials letters, 2007, 卷号: 61, 期号: 4-5, 页码: 1187-1189 Shao, YD (Shao, Y. D.); Wang, Z (Wang, Z.); Dai, YQ (Dai, Y. Q.); Zhao, YW (Zhao, Y. W.); Tang, FY (Tang, F. Y.) 收藏  |  浏览/下载：56/0  |  提交时间：2010/03/29 GaSb   Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection 会议论文  OAI收割 6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006 Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Zhao, YM (Zhao, Y. M.); Ning, J (Ning, J.); Li, JY (Li, J. Y.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Luo, MC (Luo, M. C.); Li, JM (Li, J. M.) 收藏  |  浏览/下载：102/26  |  提交时间：2010/03/29 homoepitaxy  4H-SiC  multi-epilayer  UV detection  p(+)-pi-n(-)  ULTRAVIOLET PHOTODETECTOR  EPITAXIAL-GROWTH   Micro-raman investigation of defects in a 4H-SiC homoepilayer 会议论文  OAI收割 6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006 Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Li, JM (Li, J. M.); Zhao, YM (Zhao, Y. M.); Li, JY (Li, J. Y.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Luo, MC (Luo, M. C.); Zeng, YP (Zeng, Y. P.) 收藏  |  浏览/下载：161/28  |  提交时间：2010/03/29 micro-raman  4H-SiC  defects  3C-inclusions  triangle-shaped inclusion  EPITAXIAL LAYERS  SILICON-CARBIDE   Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 期刊论文  OAI收割 materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 275-278 Sun GS (Sun G. S.); Liu XF (Liu X. F.); Gong QC (Gong Q. C.); Wang L (Wang L.); Zhao WS (Zhao W. S.); Li JY (Li J. Y.); Zeng YP (Zeng Y. P.); Li JM (Li J. M.) 收藏  |  浏览/下载：43/0  |  提交时间：2010/04/11 4H-SiC  homoepitaxial layers  surface morphological defect  optical microscopy  SILICON-CARBIDE  DISLOCATIONS  FILMS