机构

• 半导体研究所 [32]

采集方式

• OAI收割 [32]

内容类型

• 期刊论文 [30]
• 会议论文 [2]

发表日期

• 2011 [1]
• 2010 [8]
• 2009 [7]
• 2008 [5]
• 2007 [1]
• 2006 [3]
• 更多

学科主题

• 光电子学 [32]

筛选

浏览/检索结果: 共32条，第1-10条 帮助 限定条件 学科主题：光电子学     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Silicon optical modulator with integrated grating couplers based on 0.18-mu m complementary metal oxide semiconductor technology 期刊论文  OAI收割 optical engineering, 2011, 卷号: 50, 期号: 4, 页码: article no.44001 Xu HH; Li ZY; Zhu Y; Li YT; Yu YD; Yu JZ 收藏  |  浏览/下载：55/3  |  提交时间：2011/07/05 silicon photonics  modulation  grating coupler  pre-emphasis  MACH-ZEHNDER MODULATOR  CARRIER-DEPLETION  WAVE-GUIDES  COMPACT   Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 2, 页码: art. no. 026804 Lu GJ (Lu Guo-Jun); Zhu JJ (Zhu Jian-Jun); Jiang DS (Jiang De-Sheng); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Liu ZS (Liu Zong-Shun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui) 收藏  |  浏览/下载：109/2  |  提交时间：2010/04/22 metalorganic chemical vapor deposition  Al1-xInxN  gradual variation in composition  optical reflectance spectra  X-RAY-DIFFRACTION  PHASE EPITAXY  RELAXATION  FILMS  HETEROSTRUCTURES  SEPARATION  DYNAMICS  ALLOYS  REGION  LAYERS   Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801 Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Chen GF (Chen Gui-Feng); Zhang SM (Zhang Shu-Ming); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhao DG (Zhao De-Gang); Wang H (Wang Hui); Wang YT (Wang Yu-Tian); Yang H (Yang Hui) 收藏  |  浏览/下载：126/4  |  提交时间：2010/04/13 GaN  Si (111) substrate  metalorganic chemical vapour deposition  AlN buffer layer  AlGaN interlayer  : VAPOR-PHASE EPITAXY  CRACK-FREE GAN  STRESS-CONTROL  SI(111)  DEPOSITION  ALXGA1-XN  FILM   Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 10, 页码: art. no. 106802 Guo X (Guo Xi); Wang H (Wang Hui); Jiang DS (Jiang De-Sheng); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui) 收藏  |  浏览/下载：27/0  |  提交时间：2010/11/02 InGaN  In-plane grazing incidence x-ray diffraction  reciprocal space mapping  biaxial strain  CRITICAL LAYER THICKNESS  OPTICAL-PROPERTIES  LATTICE-CONSTANTS  GAN  HETEROSTRUCTURES  ALLOYS  WELLS   Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 1, 页码: art. no. 017307 作者:  Zhang SM;  Wang LJ;  Wang YT;  Yang H;  Wang LJ 收藏  |  浏览/下载：107/3  |  提交时间：2010/04/05 GaN  light emitting diode  surface treatment  leakage current  THREADING DISLOCATION DENSITIES  LAYERS  NI/AU  LEDS   A novel highly efficient grating coupler with large filling factor used for optoelectronic integration 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 12, 页码: article no.124214 作者:  Li ZY 收藏  |  浏览/下载：44/5  |  提交时间：2011/07/05 silicon photonics  silicon-on-insulator  grating coupler  NANOPHOTONIC WAVE-GUIDES  COMPACT   Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 7, 页码: art. no. 076804 Guo X (Guo Xi); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Qiu YX (Qiu Yong-Xin); Xu K (Xu Ke); Yang H (Yang Hui) 收藏  |  浏览/下载：63/0  |  提交时间：2010/08/17 in-plane grazing incidence x-ray diffraction  gallium nitride  mosaic structure  biaxial strain  CHEMICAL-VAPOR-DEPOSITION  LATTICE-CONSTANTS  ALN   An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells 期刊论文  OAI收割 journal of alloys and compounds, 2010, 卷号: 489, 期号: 2, 页码: 461-464 作者:  Wang YT;  Zhao DG;  Zhang SM;  Yang H 收藏  |  浏览/下载：146/11  |  提交时间：2010/04/04 Nitride materials  Crystal growth  X-ray diffraction  TIME-RESOLVED PHOTOLUMINESCENCE  LIGHT-EMITTING-DIODES  PIEZOELECTRIC FIELDS  LASER-DIODES  DEPENDENCE  RECOMBINATION  POLARIZATION  DYNAMICS  GROWTH  MOCVD   Wafer-Level Testable High-Speed Silicon Microring Modulator Integrated with Grating Couplers 期刊论文  OAI收割 chinese physics letters, 2010, 卷号: 27, 期号: 9, 页码: art. no. 094207 Xiao X (Xiao Xi); Zhu Y (Zhu Yu); Xu HH (Xu Hai-Hua); Zhou LA (Zhou Liang); Hu YT (Hu Ying-Tao); Li ZY (Li Zhi-Yong); Li YT (Li Yun-Tao); Yu YD (Yu Yu-De); Yu JZ (Yu Jin-Zhong) 收藏  |  浏览/下载：89/0  |  提交时间：2010/10/11 CMOS SOI TECHNOLOGY  WAVE-GUIDES  PHOTONICS   Stable multiplication gain in GaN p-i-n avalanche photodiodes with large device area 期刊论文  OAI收割 journal of physics d-applied physics, 2009, 卷号: 42, 期号: 1, 页码: art. no. 015108 作者:  Wang H;  Zhao DG;  Zhang SM;  Yang H;  Yang H 收藏  |  浏览/下载：168/40  |  提交时间：2010/03/08 SURFACE-MORPHOLOGY  DETECTORS  GROWTH