中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页
机构
成果
学者
登录
注册
登陆
×
验证码:
换一张
忘记密码?
记住我
×
校外用户登录
CAS IR Grid
机构
半导体研究所 [43]
采集方式
OAI收割 [43]
内容类型
期刊论文 [39]
会议论文 [4]
发表日期
2011 [5]
2010 [1]
2009 [3]
2008 [3]
2007 [1]
2006 [5]
更多
学科主题
半导体物理 [43]
筛选
浏览/检索结果:
共43条,第1-10条
帮助
限定条件
学科主题:半导体物理
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
提交时间升序
提交时间降序
发表日期升序
发表日期降序
题名升序
题名降序
作者升序
作者降序
Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy
期刊论文
OAI收割
journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 4, 页码: 43004, 43004
作者:
He, Jifang
;
Shang, Xiangjun
;
Li, Mifeng
;
Zhu, Yan
;
Chang, Xiuying
  |  
收藏
  |  
浏览/下载:73/0
  |  
提交时间:2012/06/14
Atomic force microscopy
Buffer layers
Epitaxial growth
Gallium alloys
Gallium arsenide
Germanium
Growth temperature
High resolution transmission electron microscopy
Molecular beam epitaxy
Molecular beams
Semiconducting gallium
Semiconductor device structures
Semiconductor quantum wells
Atomic Force Microscopy
Buffer Layers
Epitaxial Growth
Gallium Alloys
Gallium Arsenide
Germanium
Growth Temperature
High Resolution Transmission Electron Microscopy
Molecular Beam Epitaxy
Molecular Beams
Semiconducting Gallium
Semiconductor Device Structures
Semiconductor Quantum Wells
Fabrication of(Ga,Mn)As magnetic semiconductor quantum dots on Si substrates by droplet epitaxy
期刊论文
OAI收割
physica status solidi(c) current topics in solid state physics, Physica Status Solidi(C) Current Topics in Solid State Physics, 2011, 2011, 卷号: 8, 8, 期号: 2, 页码: 393-395, 393-395
作者:
Wang, S.L.
;
Meng, K.K.
;
Chen, L.
;
Xu, P.F.
;
Meng, H.J.
  |  
收藏
  |  
浏览/下载:68/0
  |  
提交时间:2012/06/14
Drop formation
Epitaxial growth
Ferromagnetic materials
Ferromagnetism
Gallium alloys
High resolution transmission electron microscopy
Magnetic semiconductors
Manganese
Semiconducting silicon
Semiconductor growth
Semiconductor quantum dots
Drop Formation
Epitaxial Growth
Ferromagnetic Materials
Ferromagnetism
Gallium Alloys
High Resolution Transmission Electron Microscopy
Magnetic Semiconductors
Manganese
Semiconducting Silicon
Semiconductor Growth
Semiconductor Quantum Dots
2-5m InAs/GaSb superlattices infrared photodetector
期刊论文
OAI收割
hongwai yu jiguang gongcheng/infrared and laser engineering, Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2011, 2011, 卷号: 40, 40, 期号: 8, 页码: 1403-1406, 1403-1406
作者:
Xu, Yingqiang
;
Tang, Bao
;
Wang, Guowei
;
Ren, Zhengwei
;
Niu, Zhichuan
  |  
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2012/06/14
Alignment
Atomic force microscopy
Atomic spectroscopy
Detectors
Epitaxial growth
Gallium alloys
Gallium arsenide
Indium arsenide
Infrared detectors
Molecular beam epitaxy
Molecular beams
Optoelectronic devices
Semiconducting gallium
Superlattices
Transmission electron microscopy
X ray diffraction
Alignment
Atomic Force Microscopy
Atomic Spectroscopy
Detectors
Epitaxial Growth
Gallium Alloys
Gallium Arsenide
Indium Arsenide
Infrared Detectors
Molecular Beam Epitaxy
Molecular Beams
Optoelectronic Devices
Semiconducting Gallium
Superlattices
Transmission Electron Microscopy
x Ray Diffraction
Fabrication of ferromagnetic GaMnSb by thermal diffusion of evaporated Mn
期刊论文
OAI收割
journal of crystal growth, JOURNAL OF CRYSTAL GROWTH, 2011, 2011, 卷号: 316, 316, 期号: 1, 页码: 145-148, 145-148
作者:
Yang GD
;
Zhu F
;
Dong S
;
Yang, GD, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. guandongyang@gmail.com
  |  
收藏
  |  
浏览/下载:64/2
  |  
提交时间:2011/07/05
Diffusion
Physical vapor deposition processes
Magnetic materials
Semiconducting III-V materials
GASB/MN DIGITAL ALLOYS
ROOM-TEMPERATURE FERROMAGNETISM
RAMAN-SCATTERING
MAGNETOTRANSPORT PROPERTIES
EPITAXIAL LAYERS
THIN-FILMS
SEMICONDUCTORS
STRAIN
MAGNETOELECTRONICS
SPINTRONICS
Diffusion
Physical Vapor Deposition Processes
Magnetic Materials
Semiconducting Iii-v Materials
Gasb/mn Digital Alloys
Room-temperature Ferromagnetism
Raman-scattering
Magnetotransport Properties
Epitaxial Layers
Thin-films
Semiconductors
Strain
Magnetoelectronics
Spintronics
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations
期刊论文
OAI收割
physics letters a, PHYSICS LETTERS A, 2011, 2011, 卷号: 375, 375, 期号: 7, 页码: 1152-1155, 1152-1155
作者:
Liu CR
;
Li JB
;
Liu, CR, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. supermanliu5@semi.ac.cn
;
jbli@semi.ac.cn
  |  
收藏
  |  
浏览/下载:58/6
  |  
提交时间:2011/07/05
First principle calculation
Indium nitride
Band gap
Defect
INITIO MOLECULAR-DYNAMICS
AUGMENTED-WAVE METHOD
INDIUM NITRIDE
GAP
PSEUDOPOTENTIALS
SEMICONDUCTORS
IMPURITIES
ABSORPTION
DEFECTS
ALLOYS
First Principle Calculation
Indium Nitride
Band Gap
Defect
Initio Molecular-dynamics
Augmented-wave Method
Indium Nitride
Gap
Pseudopotentials
Semiconductors
Impurities
Absorption
Defects
Alloys
Theoretical gain of strained GeSn0.02/Ge1-x-y ' SixSny ' quantum well laser
期刊论文
OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2010, 2010, 卷号: 107, 107, 期号: 7, 页码: art. no. 073108, Art. No. 073108
作者:
Zhu YH (Zhu Yuan-Hui)
;
Xu Q (Xu Qiang)
;
Fan WJ (Fan Wei-Jun)
;
Wang JW (Wang Jian-Wei)
;
Zhu, YH, Nanyang Technol Univ, Sch EEE, 50 Nanyang Ave, Singapore 639798, Singapore. 电子邮箱地址: ewjfan@ntu.edu.sg
  |  
收藏
  |  
浏览/下载:67/3
  |  
提交时间:2010/05/07
ALLOYS
Alloys
Ge
GE
Spin-Polarized Localized Exciton Photoluminescence Dynamics in GaInNAs Quantum Wells
期刊论文
OAI收割
japanese journal of applied physics, 2009, 卷号: 48, 期号: 10, 页码: art.no.100206
Lu SL (Lu, Shulong)
;
Nosho H (Nosho, Hidetaka)
;
Tackeuchi A (Tackeuchi, Atsushi)
;
Bian LF (Bian, Lifeng)
;
Dong JR (Dong, Jianrong)
;
Niu ZC (Niu, Zhichuan)
收藏
  |  
浏览/下载:175/28
  |  
提交时间:2010/03/08
ALLOYS
Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate
期刊论文
OAI收割
applied physics letters, 2009, 卷号: 94, 期号: 14, 页码: art. no. 141902
Chen YH
;
Li C
;
Zhou ZW
;
Lai HK
;
Chen SY
;
Ding WC
;
Cheng BW
;
Yu YD
收藏
  |  
浏览/下载:92/14
  |  
提交时间:2010/03/08
chemical vapour deposition
elemental semiconductors
energy gap
germanium
Ge-Si alloys
photoluminescence
semiconductor epitaxial layers
semiconductor quantum wells
silicon
tensile strength
Room Temperature Ferromagnetism of Mn Implanted AlInN
期刊论文
OAI收割
japanese journal of applied physics, 2009, 卷号: 48, 期号: 4, 页码: art. no. 040202
Majid A
;
Sharif R
;
Ali A
;
Zhu JJ
收藏
  |  
浏览/下载:248/25
  |  
提交时间:2010/03/08
MAGNETIC-PROPERTIES
SEMICONDUCTORS
GAN
CR
ALLOYS
GROWTH
FILMS
Theoretical design and performance of InxGa1-xN two-junction solar cells
期刊论文
OAI收割
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 24, 页码: art. no. 245104
Zhang, XB
;
Wang, XL
;
Xiao, HL
;
Yang, CB
;
Ran, JX
;
Wang, CM
;
Hou, QF
;
Li, JM
;
Wang, ZG
收藏
  |  
浏览/下载:29/2
  |  
提交时间:2010/03/08
IN1-XGAXN ALLOYS
BAND-GAP
IRRADIANCE
SINGLE
INN