中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [14]
采集方式
OAI收割 [14]
内容类型
期刊论文 [14]
发表日期
2011 [14]
学科主题
半导体材料 [14]
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浏览/检索结果:
共14条,第1-10条
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存缴方式:oaiharvest
发表日期:2011
学科主题:半导体材料
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Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy
期刊论文
OAI收割
materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 108-113
Jin, L
;
Zhou, HY
;
Qu, SC
;
Wang, ZG
收藏
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浏览/下载:91/0
  |  
提交时间:2012/02/06
Patterned substrate
Ion implantation
Ordered nanodots
Anodic aluminum oxide
QUANTUM DOTS
ISLANDS
GROWTH
SEMICONDUCTORS
NANOSTRUCTURES
COMPUTATION
INGAAS
Hybrid polymer-CdSe solar cells with a ZnO nanoparticle buffer layer for improved efficiency and lifetime
期刊论文
OAI收割
journal of materials chemistry, 2011, 卷号: 21, 期号: 11, 页码: 3814-3817
Qian, Lei
;
Yang, Jihua
;
Zhou, Renjia
;
Tang, Aiwei
;
Zheng, Ying
;
Tseng, Teng-Kuan
;
Bera, Debasis
;
Xue, Jiangeng
;
Holloway, Paul. H.
收藏
  |  
浏览/下载:114/0
  |  
提交时间:2012/06/14
Buffer layers
Cadmium alloys
Cadmium compounds
Conversion efficiency
Open circuit voltage
Optical waveguides
Solar cells
Zinc oxide
Microstructure and electrical properties of Y(NO3)3·6H2O-doped ZnO-Bi2O3-based varistor ceramics
期刊论文
OAI收割
journal of alloys and compounds, 2011, 卷号: 509, 期号: 38, 页码: 9312-9317
Xu, Dong
;
Cheng, Xiaonong
;
Yuan, Hongming
;
Yang, Juan
;
Lin, Yuanhua
收藏
  |  
浏览/下载:46/0
  |  
提交时间:2012/06/14
Ceramic materials
Degradation
Microstructure
Rare earth alloys
Rare earths
Varistors
Zinc oxide
Wurtzite to zincblende transition of InN films on(011) SrTiO3 by decreasing trimethylindium flows
期刊论文
OAI收割
applied physics a: materials science and processing, 2011, 页码: 1-5
Jia, C.H.
;
Chen, Y.H.
;
Zhang, B.
;
Liu, X.L.
;
Yang, S.Y.
;
Zhang, W.F.
;
Wang, Z.G.
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2012/06/14
Absorption
Absorption spectroscopy
Crystal atomic structure
Epitaxial growth
Metallorganic chemical vapor deposition
Optical properties
Organic chemicals
Strontium alloys
Strontium titanates
X ray diffraction
Zinc sulfide
Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation
期刊论文
OAI收割
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H
;
Zhou K
;
Pang JB
;
Shao YD
;
Wang Z
;
Zhao YW
收藏
  |  
浏览/下载:52/10
  |  
提交时间:2011/07/05
UNDOPED GALLIUM ANTIMONIDE
SELF-DIFFUSION
NATIVE DEFECTS
N-TYPE
CRYSTALS
CATHODOLUMINESCENCE
PHOTOLUMINESCENCE
SEMICONDUCTORS
SPECTROSCOPY
LUMINESCENCE
InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage
期刊论文
OAI收割
chinese physics b, 2011, 卷号: 20, 期号: 2, 页码: article no.28402
作者:
Hou QF
;
Yin HB
收藏
  |  
浏览/下载:43/6
  |  
提交时间:2011/07/05
InGaN
solar cell
multiple quantum wells
IN1-XGAXN ALLOYS
BAND-GAP
INN
Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy
期刊论文
OAI收割
applied surface science, 2011, 卷号: 257, 期号: 20, 页码: 8718-8721
作者:
Jin P
收藏
  |  
浏览/下载:53/4
  |  
提交时间:2011/07/07
Photoluminescence
Raman scattering
Pulsed atomic layer epitaxy
AlGaN alloys
Microstructure and electrical properties of Y(NO(3))(3)center dot 6H(2)O-doped ZnO-Bi(2)O(3)-based varistor ceramics
期刊论文
OAI收割
journal of alloys and compounds, 2011, 卷号: 509, 期号: 38, 页码: 9312-9317
Xu D
;
Cheng XN
;
Yuan HM
;
Yang J
;
Lin YH
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2011/09/14
ZNO-BASED VARISTORS
ZNO-PR6O11-BASED VARISTORS
SINTERING TEMPERATURE
DIELECTRIC-PROPERTIES
BI2O3 VAPORIZATION
RELEVANT PARAMETER
COOLING RATE
STABILITY
VOLTAGE
OXIDE
Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy
期刊论文
OAI收割
nanoscale research letters, 2011, 卷号: 6, 页码: article no.50
作者:
Wei HY
;
Song HP
;
Zhang B
收藏
  |  
浏览/下载:64/2
  |  
提交时间:2011/07/05
CHEMICAL-VAPOR-DEPOSITION
CORE-LEVEL PHOTOEMISSION
SB-DOPED SNO2
INN
GROWTH
GAN
NAXWO3
ALLOYS
GREEN
STATE
Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy
期刊论文
OAI收割
materials science in semiconductor processing, Materials Science in Semiconductor Processing, 2011, 2011
作者:
Hu, Qiang
;
Wei, Tongbo
;
Duan, Ruifei
;
Yang, Jiankun
;
Huo, Ziqiang
  |  
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2012/06/14
Carrier concentration
Etching
Gallium alloys
Optical properties
Point defects
Raman spectroscopy
Semiconducting gallium compounds
Vapor phase epitaxy
Vapors
Carrier Concentration
Etching
Gallium Alloys
Optical Properties
Point Defects
Raman Spectroscopy
Semiconducting Gallium Compounds
Vapor Phase Epitaxy
Vapors