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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
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半导体研究所 [146]
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OAI收割 [146]
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期刊论文 [127]
会议论文 [19]
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2011 [5]
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半导体材料 [146]
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学科主题:半导体材料
专题:半导体研究所
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Sample Grating Distributed Feedback Quantum Cascade Laser Array
期刊论文
OAI收割
nanoscale research letters, 2015, 卷号: 10, 期号: 1, 页码: 406
FL Yan
;
JC Zhang
;
CW Liu
;
N. Zhuo
;
FQ. Liu
;
SQ Zhai
;
ZG Wang
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2016/03/29
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
期刊论文
OAI收割
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:
Song HP
;
Wei HY
;
Li CM
;
Jiao CM
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  |  
浏览/下载:66/4
  |  
提交时间:2011/07/05
CATHODOLUMINESCENCE CHARACTERIZATION
GALLIUM NITRIDE
STRESSES
LAYERS
HETEROSTRUCTURE
DEPOSITION
CONSTANTS
MECHANISM
SAPPHIRE
STRAIN
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers
期刊论文
OAI收割
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者:
Jia CH
;
Song HP
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  |  
浏览/下载:118/2
  |  
提交时间:2011/07/05
Anisotropy
Crystal morphology
Metalorganic chemical vapor deposition
a-Plane InN
INDIUM NITRIDE
MOVPE GROWTH
CUBIC INN
SAPPHIRE
GAN
MBE
The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing
期刊论文
OAI收割
applied physics letters, 2011, 卷号: 98, 期号: 7, 页码: article no.71914
作者:
收藏
  |  
浏览/下载:49/4
  |  
提交时间:2011/07/05
SPECTROSCOPY
Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition
期刊论文
OAI收割
chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: article no.48102
作者:
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  |  
浏览/下载:83/7
  |  
提交时间:2011/07/05
ELECTRON-MOBILITY TRANSISTORS
AL-CONTENT
STRESS-CONTROL
PHASE EPITAXY
ALGAN
BUFFER
LAYERS
HETEROSTRUCTURES
INTERLAYERS
SILICON
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer
期刊论文
OAI收割
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者:
收藏
  |  
浏览/下载:81/5
  |  
提交时间:2011/07/05
Sandwich structure
Stress
Aluminum nitride
Gallium nitride
Silicon
PHONON DEFORMATION POTENTIALS
WURTZITE ALN
SILICON
STRESS
TRANSISTORS
EPITAXY
LAYERS
Magnetic properties of ZnO-doped cobalt ferrite
会议论文
OAI收割
4th asian meeting on electroceramics (amec-4), hangzhou, peoples r china, jun 27-30, 2005
Zhou, JP
;
Shi, Z
;
He, HC
;
Nan, CW
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  |  
浏览/下载:56/0
  |  
提交时间:2010/03/09
CoFe2O4
Short range scattering mechanism of type-II GaSb/GaAs quantum dots on the transport properties of two-dimensional electron gas
期刊论文
OAI收割
journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 043702
Li GD (Li Guodong)
;
Yin H (Yin Hong)
;
Zhu QS (Zhu Qinsheng)
;
Sakaki H (Sakaki Hiroyuki)
;
Jiang C (Jiang Chao)
收藏
  |  
浏览/下载:204/41
  |  
提交时间:2010/10/11
PHOTOLUMINESCENCE
HETEROJUNCTIONS
SPECTROSCOPY
SYSTEMS
PHYSICS
Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density
期刊论文
OAI收割
journal of physics d-applied physics, 2010, 卷号: 43, 期号: 48, 页码: art. no. 485102
Zhou XL (Zhou X. L.)
;
Chen YH (Chen Y. H.)
;
Jia CH (Jia C. H.)
;
Ye XL (Ye X. L.)
;
Xu B (Xu Bo)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2010/12/12
DEPENDENCE
SPECTRA
Evaluation of thermal radiation dependent performance of GaSb thermophotovoltaic cell based on an analytical absorption coefficient model
期刊论文
OAI收割
solar energy materials and solar cells, 2010, 卷号: 94, 期号: 10, 页码: 1704-1710
Wang Y (Wang Y.)
;
Chen NF (Chen N. F.)
;
Zhang XW (Zhang X. W.)
;
Huang TM (Huang T. M.)
;
Yin ZG (Yin Z. G.)
;
Wang YS (Wang Y. S.)
;
Zhang H (Zhang H.)
收藏
  |  
浏览/下载:190/22
  |  
提交时间:2010/09/07
Thermophotovoltaic
Gallium antimonide
Absorption coefficient