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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [16]
采集方式
OAI收割 [16]
内容类型
期刊论文 [13]
会议论文 [3]
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2011 [1]
2010 [1]
2008 [2]
2007 [1]
2006 [4]
2003 [1]
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学科主题
半导体材料 [16]
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Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
期刊论文
OAI收割
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:
Song HP
;
Wei HY
;
Li CM
;
Jiao CM
收藏
  |  
浏览/下载:66/4
  |  
提交时间:2011/07/05
CATHODOLUMINESCENCE CHARACTERIZATION
GALLIUM NITRIDE
STRESSES
LAYERS
HETEROSTRUCTURE
DEPOSITION
CONSTANTS
MECHANISM
SAPPHIRE
STRAIN
Preparation and Optical Performance of Freestanding GaN Thick Films
期刊论文
OAI收割
rare metal materials and engineering, 2010, 卷号: 39, 期号: 12, 页码: 2169-2172
作者:
Wei TB
;
Yang JK
;
Duan RF
收藏
  |  
浏览/下载:58/10
  |  
提交时间:2011/07/05
GaN
HVPE
freestanding thick films
stress release
photoluminescence
VAPOR-PHASE EPITAXY
GROWTH
PRESSURE
HVPE
Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)
期刊论文
OAI收割
physica status solidi a-applications and materials science, 2008, 卷号: 205, 期号: 2, 页码: 294-299
Wu, JJ
;
Zhao, LB
;
Zhang, GY
;
Liu, XL
;
Zhu, QS
;
Wang, ZG
;
Jia, QJ
;
Guo, LP
;
Hu, TD
收藏
  |  
浏览/下载:67/3
  |  
提交时间:2010/03/08
CHEMICAL-VAPOR-DEPOSITION
TEMPERATURE ALN INTERLAYERS
PHASE EPITAXY
OPTICAL-PROPERTIES
SURFACTANT
SUBSTRATE
STRESS
SI
REDUCTION
SAPPHIRE
Effect of Nitridation on Morphology, Structural Properties and Stress of AIN Films
期刊论文
OAI收割
chinese physics letters, 2008, 卷号: 25, 期号: 12, 页码: 4364-4367
作者:
Wei HY
;
Jiao CM
收藏
  |  
浏览/下载:178/45
  |  
提交时间:2010/03/08
TRANSMISSION ELECTRON-MICROSCOPY
WURTZITE-TYPE CRYSTALS
VAPOR-PHASE EPITAXY
INTRINSIC STRESS
SAPPHIRE SURFACE
THIN-FILMS
GAN
GROWTH
DIFFRACTION
MECHANISM
High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)
会议论文
OAI收割
33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006
Wang, XY (Wang, Xiaoyan)
;
Wang, XL (Wang, Xiaoliang)
;
Wang, BZ (Wang, Baozhu)
;
Xiao, HL (Xiao, Hongling)
;
Liu, HX (Liu, Hongxin)
;
Wang, JX (Wang, Junxi)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
收藏
  |  
浏览/下载:125/38
  |  
提交时间:2010/03/29
BUFFER LAYER
STRESS
PHOTODIODES
REDUCTION
DETECTORS
SAPPHIRE
EPITAXY
GROWTH
Finite element analysis of stress and strain distributions in InAs/GaAs quantum dots
期刊论文
OAI收割
chinese physics, 2006, 卷号: 15, 期号: 6, 页码: 1315-1319
Zhou WM
;
Wang CY
;
Chen YH
;
Wang ZG
收藏
  |  
浏览/下载:47/0
  |  
提交时间:2010/04/11
quantum dots
strain and stress distribution
strain energy
finite element method
ISLANDS
GROWTH
GAAS
GAAS(001)
EVOLUTION
Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition
期刊论文
OAI收割
optical materials, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231
Wu JJ (Wu Jiejun)
;
Han XX (Han Xiuxun)
;
Li JM (Li Jiemin)
;
Wei HY (Wei Hongyuan)
;
Cong GW (Cong Guangwei)
;
Liu XL (Liu Xianglin)
;
Zhu QS (Zhu Qinsheng)
;
Wang ZG (Wang Zhanguo)
;
Jia QJ (Jia Quanjie)
;
Guo LP (Guo Liping)
;
Hu TD (Hu Tiandou)
;
Wang HH (Wang Huanhua)
收藏
  |  
浏览/下载:49/0
  |  
提交时间:2010/04/11
in doping
cracks
Si(111) substrate
LT-AlGaN interlayer
metalorganic chemical vapor deposition
GaN
PHASE EPITAXY
INDIUM-SURFACTANT
OPTICAL-PROPERTIES
SI(111)
STRESS
FILMS
Structural and optical properties of ZnO films on Si substrates using a gamma-Al2O3 buffer layer
期刊论文
OAI收割
journal of physics d-applied physics, 2006, 卷号: 39, 期号: 2, 页码: 269-273
Shen WJ
;
Wang J
;
Wang QY
;
Duan Y
;
Zeng YP
收藏
  |  
浏览/下载:49/0
  |  
提交时间:2010/04/11
CHEMICAL-VAPOR-DEPOSITION
ZINC-OXIDE FILMS
MOLECULAR-BEAM EPITAXY
SAPPHIRE
GROWTH
Kinetic Monte Carlo simulation of spatially ordered growth of quantum dots on patterned substrate
期刊论文
OAI收割
solid state communications, 2006, 卷号: 137, 期号: 11, 页码: 630-633
作者:
Xu B
收藏
  |  
浏览/下载:51/0
  |  
提交时间:2010/04/11
quantum dot
molecular beam epitaxy
kinetic effects
Monte Carlo simulation
MOLECULAR-BEAM EPITAXY
PERIODIC STRAIN
NUCLEATION
Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method
期刊论文
OAI收割
journal of crystal growth, 2003, 卷号: 252, 期号: 1-3, 页码: 19-25
Qu BZ
;
Chen Z
;
Lu DC
;
Han P
;
Liu XG
;
Wang XH
;
Wang D
;
Zhu QS
;
Wang ZG
收藏
  |  
浏览/下载:37/0
  |  
提交时间:2010/08/12
nanostructures
metalorganic chemical vapor deposition
nitrides
CHEMICAL-VAPOR-DEPOSITION
MOLECULAR-BEAM EPITAXY
SIZE DISTRIBUTION
GROWTH
GAAS
DEPENDENCE
EMISSION
NUMBER