中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
采集方式
内容类型
  • 期刊论文 [21]
发表日期
学科主题
  • 半导体材料 [21]
筛选

浏览/检索结果: 共21条,第1-10条 帮助

限定条件        
条数/页: 排序方式:
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文  OAI收割
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:  
Song HP;  Wei HY;  Li CM;  Jiao CM
收藏  |  浏览/下载:66/4  |  提交时间:2011/07/05
Comparison of as-grown and annealed GaN/InGaN:Mg samples 期刊论文  OAI收割
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 34, 页码: 345101
Deng QW; Wang XL; Xiao HL; Wang CM; Yin HB; Chen H; Lin DF; Jiang LJ; Feng C; Li JM; Wang ZG; Hou X
收藏  |  浏览/下载:18/0  |  提交时间:2012/01/06
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文  OAI收割
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  
Pan X
收藏  |  浏览/下载:20/0  |  提交时间:2011/09/14
Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1) 期刊论文  OAI收割
materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 97-100
Wei, M; Wang, XL; Pan, X; Xiao, HL; Wang, CM; Hou, QF; Wang, ZG
收藏  |  浏览/下载:26/0  |  提交时间:2012/01/06
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 期刊论文  OAI收割
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者:  
Pan X
收藏  |  浏览/下载:81/5  |  提交时间:2011/07/05
Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer 期刊论文  OAI收割
ieee international conference on group iv photonics gfp, IEEE International Conference on Group IV Photonics GFP, 2011, 2011, 卷号: 32, 32, 期号: 11, 页码: 114007, 114007
作者:  
Li, Zhicong;  Li, Panpan;  Wang, Bing;  Li, Hongjian;  Liang, Meng
  |  收藏  |  浏览/下载:20/0  |  提交时间:2012/06/14
Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry 期刊论文  OAI收割
journal of applied physics, 2009, 卷号: 105, 期号: 10, 页码: art. no. 103108
作者:  
Xu B;  Ye XL
收藏  |  浏览/下载:69/0  |  提交时间:2010/03/08
Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111) 期刊论文  OAI收割
physica status solidi a-applications and materials science, 2008, 卷号: 205, 期号: 2, 页码: 294-299
Wu, JJ; Zhao, LB; Zhang, GY; Liu, XL; Zhu, QS; Wang, ZG; Jia, QJ; Guo, LP; Hu, TD
收藏  |  浏览/下载:66/3  |  提交时间:2010/03/08
Fabrication of ZnO and its enhancement of charge injection and transport in hybrid organic/inorganic light emitting devices 期刊论文  OAI收割
applied surface science, 2007, 卷号: 253, 期号: 18, 页码: 7506-7509
Liu JP; Qu SC (Qu, S. C.); Zeng XB; Xu Y; Gou XF; Wang ZJ; Zhou HY; Wang ZG
收藏  |  浏览/下载:72/0  |  提交时间:2010/03/29
ZnO  
Stability of GaAs photocathodes under different intensities of illumination 期刊论文  OAI收割
acta physica sinica, 2007, 卷号: 56, 期号: 10, 页码: 6109-6113
Zou JJ (Zou Ji-Jun); Chang BK (Chang Ben-Kang); Yang Z (Yang Zhi); Gao P (Gao Pin); Qiao JL (Qiao Jian-Liang); Zeng YP (Zeng Yi-Pine)
收藏  |  浏览/下载:36/0  |  提交时间:2010/03/29