机构

• 半导体研究所 [101]

采集方式

• OAI收割 [101]

内容类型

• 期刊论文 [77]
• 会议论文 [24]

发表日期

• 2011 [9]
• 2010 [6]
• 2009 [2]
• 2008 [3]
• 2006 [8]
• 2005 [3]
• 更多

学科主题

• 半导体材料 [101]

筛选

浏览/检索结果: 共101条，第1-10条 帮助 限定条件 学科主题：半导体材料    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy 期刊论文  OAI收割 materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 108-113 Jin, L; Zhou, HY; Qu, SC; Wang, ZG 收藏  |  浏览/下载：91/0  |  提交时间：2012/02/06 Patterned substrate  Ion implantation  Ordered nanodots  Anodic aluminum oxide  QUANTUM DOTS  ISLANDS  GROWTH  SEMICONDUCTORS  NANOSTRUCTURES  COMPUTATION  INGAAS   Effect of gas pressure on the properties of silicon thin film 期刊论文  OAI收割 gongneng cailiao/journal of functional materials, 2011, 卷号: 42, 期号: 8, 页码: 1489-1491 Hao, Hui-Ying; Li, Wei-Min; Zeng, Xiang-Bo; Kong, Guang-Lin; Liao, Xian-Bo 收藏  |  浏览/下载：44/0  |  提交时间：2012/06/14 Amorphous films  Chemical vapor deposition  Deposition  Microcrystalline silicon  Microstructure  Photoelectricity  Plasma deposition  Plasma enhanced chemical vapor deposition  Pressure effects  Semiconducting silicon compounds  Transport properties   Enhanced absorption in nanocrystalline silicon thin film solar cells using surface plasmon polaritons 期刊论文  OAI收割 icmree2011 - proceedings 2011 international conference on materials for renewable energy and environment, 2011, 卷号: 1, 页码: 242-246 Hao, Huiying; Li, Weimin; Xing, Jie; Fan, Zhenjun, 收藏  |  浏览/下载：12/0  |  提交时间：2012/06/14 Absorption  Electromagnetic wave polarization  Energy gap  Gold  Light absorption  Nanostructured materials  Optical properties  Particle optics  Phonons  Photons  Plasmons  Quantum theory  Scattering  Semiconducting silicon compounds  Silicon solar cells  Silver  Solar absorbers  Solar energy  Surface plasmon resonance  Surfaces  Thin films   Optimization of double nanocrystalline silicon p-layers for amorphous silicon solar cells 期刊论文  OAI收割 cailiao gongcheng/journal of materials engineering, 2011, 期号: 8, 页码: 5-7+13 Liu, Shi-Yong; Zeng, Xiang-Bo; Peng, Wen-Bo; Yao, Wen-Jie; Xie, Xiao-Bing; Yang, Ping; Wang, Chao; Wang, Zhan-Guo 收藏  |  浏览/下载：32/0  |  提交时间：2012/06/14 Amorphous films  Chemical vapor deposition  Energy gap  High resolution electron microscopy  High resolution transmission electron microscopy  Hydrogen  Nanocrystalline silicon  Optical band gaps  Plasma deposition  Plasma enhanced chemical vapor deposition  Raman spectroscopy  Semiconducting silicon compounds  Solar power generation  Thin films  Transmission electron microscopy   The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD 期刊论文  OAI收割 journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42 作者:  Song HP;  Shi K;  Sang L;  Wei HY 收藏  |  浏览/下载：58/3  |  提交时间：2011/07/05 Metal organic chemical vapor deposition  Sapphire  Zinc compounds  Semiconducting II-VI materials  VAPOR-PHASE EPITAXY  OPTICAL-PROPERTIES  ZNO NANORODS  RAMAN-SCATTERING  M-PLANE  FILMS  PHOTOLUMINESCENCE  DEPOSITION  NANOWIRES  FIELDS   Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 期刊论文  OAI收割 journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575 作者:  Xu B;  Jin P;  Ye XL 收藏  |  浏览/下载：63/1  |  提交时间：2011/07/05 Atom force microscopy  Nanostructures  Molecular-beam epitaxy  Nanomaterials  Semiconducting gallium arsenide  QUANTUM-DOTS  ANODIC ALUMINA  ARRAYS  PLACEMENT  INAS   Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文  OAI收割 semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016 Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW 收藏  |  浏览/下载：52/10  |  提交时间：2011/07/05 UNDOPED GALLIUM ANTIMONIDE  SELF-DIFFUSION  NATIVE DEFECTS  N-TYPE  CRYSTALS  CATHODOLUMINESCENCE  PHOTOLUMINESCENCE  SEMICONDUCTORS  SPECTROSCOPY  LUMINESCENCE   Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy 期刊论文  OAI收割 materials science in semiconductor processing, Materials Science in Semiconductor Processing, 2011, 2011 作者:  Hu, Qiang;  Wei, Tongbo;  Duan, Ruifei;  Yang, Jiankun;  Huo, Ziqiang   |  收藏  |  浏览/下载：30/0  |  提交时间：2012/06/14 Carrier concentration  Etching  Gallium alloys  Optical properties  Point defects  Raman spectroscopy  Semiconducting gallium compounds  Vapor phase epitaxy  Vapors  Carrier Concentration  Etching  Gallium Alloys  Optical Properties  Point Defects  Raman Spectroscopy  Semiconducting Gallium Compounds  Vapor Phase Epitaxy  Vapors   Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文  OAI收割 journal of crystal growth, JOURNAL OF CRYSTAL GROWTH, 2011, 2011, 卷号: 314, 314, 期号: 1, 页码: 141-145, 141-145 作者:  Wei TB;  Yang JK;  Hu Q;  Duan RF;  Huo ZQ   |  收藏  |  浏览/下载：83/4  |  提交时间：2011/07/05 CL  PL  Stacking fault  HVPE  GaN  Nonpolar  CHEMICAL-VAPOR-DEPOSITION  ACCEPTOR PAIR EMISSION  PHASE EPITAXY  GROWN GAN  SEMICONDUCTORS  SAPPHIRE  FILMS  NITRIDE  Cl  Pl  Stacking Fault  Hvpe  Gan  Nonpolar  Chemical-vapor-deposition  Acceptor Pair Emission  Phase Epitaxy  Grown Gan  Semiconductors  Sapphire  Films  Nitride   The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy 期刊论文  OAI收割 solid state communications, 2010, 卷号: 150, 期号: 41-42, 页码: 1991-1994 Song HP (Song H. P.); Zheng GL (Zheng G. L.); Yang AL (Yang A. L.); Guo Y (Guo Y.); Wei HY (Wei H. Y.); Li CM (Li C. M.); Yang SY (Yang S. Y.); Liu XL (Liu X. L.); Zhu QS (Zhu Q. S.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：17/0  |  提交时间：2010/11/27 ZnO  In2O3  MOCVD  Photoelectron spectroscopies  IN2O3-ZNO FILMS  TRANSPARENT  OXIDE  SEMICONDUCTORS  INN