机构

• 半导体研究所 [18]

采集方式

• OAI收割 [18]

内容类型

• 期刊论文 [18]

发表日期

• 2009 [2]
• 2008 [1]
• 2006 [2]
• 2005 [1]
• 2004 [1]
• 2003 [2]
• 更多

学科主题

• 半导体材料 [13]
• 半导体物理 [4]
• 微电子学 [1]

筛选

浏览/检索结果: 共18条，第1-10条 帮助 限定条件 内容类型：期刊论文    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Lattice polarity detection of InN by circular photogalvanic effect 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 95, 期号: 3, 页码: art. no. 031902 Zhang Q; Wang XQ; He XW; Yin CM; Xu FJ; Shen B; Chen YH; Wang ZG; Ishitani Y; Yoshikawa A 收藏  |  浏览/下载：66/0  |  提交时间：2010/03/08 III-V semiconductors  indium compounds  nondestructive testing  photoconductivity  radiation effects  semiconductor thin films  wide band gap semiconductors   Enhanced charge storage characteristics of silicon nanocrystals fabricated by electron-beam coevaporation of Si and SiOx(x=1 or 2) 期刊论文  OAI收割 journal of vacuum science & technology b, 2009, 卷号: 27, 期号: 6, 页码: 2462-2467 Chen C (Chen Chen); Jia R (Jia Rui); Li WL (Li Weilong); Li HF (Li Haofeng); Ye TC (Ye Tianchun); Liu XY (Liu Xinyu); Liu M (Liu Ming); Kasai S (Kasai Seiya); Tamotsu H (Tamotsu Hashizume); Wu NJ (Wu Nanjian) 收藏  |  浏览/下载：139/35  |  提交时间：2010/03/08 electron beam deposition   Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles 期刊论文  OAI收割 physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206 Shi LJ; Zhu LF; Zhao YH; Liu BG 收藏  |  浏览/下载：217/56  |  提交时间：2010/03/08 ab initio calculations  aluminium compounds  annealing  band structure  chromium  Curie temperature  density functional theory  exchange interactions (electron)  ferromagnetic materials  III-V semiconductors  semimagnetic semiconductors  total energy  vacancies (crystal)   ZnO thin films on Si(111) grown by pulsed laser deposition from metallic Zn target 期刊论文  OAI收割 applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 841-845 Zhao J (Zhao Jie); Hu LZ (Hu Lizhong); Wang ZY (Wang Zhaoyang); Sun J (Sun Jie); Wang ZJ (Wang Zhijun) 收藏  |  浏览/下载：24/0  |  提交时间：2010/04/11 ZnO  pulsed laser deposition  oxygen pressure  annealing  X-ray diffraction  photoluminescence  ULTRAVIOLET EMISSION  ROOM-TEMPERATURE  ZINC-OXIDE   Photoluminescence from C+ ion-implanted and electrochemical etched Si layers 期刊论文  OAI收割 applied surface science, 2006, 卷号: 252, 期号: 24, 页码: 8424-8427 Shi LW (Shi Liwei); Wang Q (Wang Qiang); Li YG (Li Yuguo); Xue CS (Xue Chengshan); Zhuang HZ (Zhuang Huizhao) 收藏  |  浏览/下载：34/0  |  提交时间：2010/04/11 ion implantation  annealing  chemical etching  photoluminescence  POROUS SILICON  LUMINESCENCE   Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness 期刊论文  OAI收割 journal of crystal growth, 2005, 卷号: 284, 期号: 1-2, 页码: 20-27 作者:  Ye XL;  Xu B 收藏  |  浏览/下载：67/18  |  提交时间：2010/03/17 annealing   Amorphous silicon carbide films prepared by H-2 diluted silane-methane plasma 期刊论文  OAI收割 journal of crystal growth, 2004, 卷号: 264, 期号: 1-3, 页码: 7-12 Hu ZH; Liao XB; Diao HW; Kong GL; Zeng XB; Xu YY 收藏  |  浏览/下载：32/3  |  提交时间：2010/03/09 annealing   Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient 期刊论文  OAI收割 microelectronic engineering, 2003, 卷号: 66, 期号: 1-4, 页码: 333-339 Wang QY; Wang JH; Deng HF; Lin LY 收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12 neutron irradiation  annealing  defects in silicon  SPECTRA   Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances 期刊论文  OAI收割 journal of crystal growth, 2003, 卷号: 259, 期号: 1-2, 页码: 1-7 Dong ZY; Zhao YW; Zeng YP; Duan ML; Sun WR; Jiao JH; Lin LY 收藏  |  浏览/下载：351/16  |  提交时间：2010/08/12 annealing  defects  etching  semiconducting indium phosphide  FE-DOPED INP  SEMIINSULATING INP  INDIUM-PHOSPHIDE  DEFECTS  DIFFUSION  CRYSTALS  WAFERS   Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers 期刊论文  OAI收割 materials science and engineering b-solid state materials for advanced technology, 2002, 卷号: 91, 期号: 0, 页码: 521-524 Zhao YW; Sun NF; Dong HW; Jiao JH; Zhao JQ; Sun TN; Lin LY 收藏  |  浏览/下载：82/19  |  提交时间：2010/08/12 indium phosphide  semi-insulating  annealing  PICTS  photoluminescence  SEMIINSULATING INP  INDIUM-PHOSPHIDE  FE  PHOTOLUMINESCENCE  TEMPERATURE