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Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共84条，第1-10条 帮助

条数/页： 排序方式：
Periodic Solutions to Klein-Gordon Systems with Linear Couplings 期刊论文  OAI收割
ADVANCED NONLINEAR STUDIES, 2021, 卷号: 21, 期号: 3, 页码: 633-660
作者:  Chen, Jianyi;  Zhang, Zhitao;  Chang, Guijuan;  Zhao, Jing
  |  收藏  |  浏览/下载：46/0  |  提交时间：2021/10/26
Improved Ti germanosilicidation by Ge pre-amorphization implantation (PAI) for advanced contact technologies 期刊论文  OAI收割
Microelectronic Engineering, 2018
作者:  Mao SJ(毛淑娟);  Wang GL(王桂磊);  Xu J(许静);  Zhang D(张丹);  Luo X(罗雪)
  |  收藏  |  浏览/下载：48/0  |  提交时间：2019/05/05
Impact of Ge Preamorphization Implantation on Both the Formation of Ultrathin TiSix and the Specific Contact Resistivity in TiSix/n-Si Contacts 期刊论文  OAI收割
IEEE Transactions on Electron Devices, 2018
作者:  Ye TC(叶甜春);  Mao SJ(毛淑娟);  Wang GL(王桂磊);  Xu J(许静);  Luo X(罗雪)
  |  收藏  |  浏览/下载：40/0  |  提交时间：2019/05/05
Enhancing the thermal stability of NiGe by prior-germanidation fluorine implantation into Ge substrate 期刊论文  OAI收割
Japanese Journal of Applied Physics, 2018
作者:  Zhang D(张丹);  Wang WW(王文武);  Chen DP(陈大鹏);  Li JF(李俊峰);  Liu S(刘实)
  |  收藏  |  浏览/下载：23/0  |  提交时间：2019/05/20
Impact of Ge pre-amorphization implantation on forming ultrathin TiGe x on both n-and p-Ge substrate 期刊论文  OAI收割
Japanese Journal of Applied Physics, 2018
作者:  Liu S(刘实);  Li JF(李俊峰);  Wang WW(王文武);  Chen DP(陈大鹏);  Zhao C(赵超)
  |  收藏  |  浏览/下载：18/0  |  提交时间：2019/05/20
Band-Edge Work Function Obtained by Plasma Doping TiN Metal Gate for nMOS Device Application 期刊论文  OAI收割
IEEE TRANSACTIONS ON ELECTRON DEVICE, 2018
作者:  Shan Tang;  Tao GL(陶桂龙);  Li JF(李俊峰);  Zhu HL(朱慧珑);  Wang XL(王晓磊)
  |  收藏  |  浏览/下载：28/0  |  提交时间：2019/05/20
Novel GAA Si Nanowire p-MOSFETs With Excellent Short-Channel Effect Immunity via an Advanced Forming Process 期刊论文  OAI收割
IEEE Electron Device Letters, 2018
作者:  Zhang QZ(张青竹);  Yin HX(殷华湘);  Meng LK(孟令款);  Yao JX(姚佳欣);  Li JJ(李俊杰)
  |  收藏  |  浏览/下载：30/0  |  提交时间：2019/05/05
Comparative Investigation of Semipolar (11-22) GaN Layers on m-Plane Sapphire with Different Nucleation Layers 期刊论文  OAI收割
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7446-7450
作者:  Wang Lianshan;  Zhao Guijuan;  Meng Yulin;  Li Huijie;  Yang Shaoyan;  Wang Zhanguo
  |  收藏  |  浏览/下载：32/0  |  提交时间：2019/11/15
Measurement of semi-polar (11–22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy 期刊论文  OAI收割
Applied Physics A, 2018, 卷号: 124, 期号: 2, 页码: 130
作者:  Guijuan Zhao;  Huijie Li;  Lianshan Wang;  Yulin Meng;  Fangzheng Li;  Hongyuan Wei;  Shaoyan Yang;  Zhanguo Wang
  |  收藏  |  浏览/下载：34/0  |  提交时间：2019/11/15
Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures With Indium-Rich Clusters 期刊论文  OAI收割
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 卷号: 215, 期号: 23, 页码: 1800455
作者:  Meng Yulin;  Wang Lianshan;  Zhao Guijuan;  Li Fangzheng;  Li Huijie;  Yang Shaoyan;  Wang Zhanguo
  |  收藏  |  浏览/下载：35/0  |  提交时间：2019/11/15