中国科学院机构知识库网格系统: 检索

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	Engineering and Microscopic Mechanism of Quantum Emitters Induced by Heavy Ions in hBN 期刊论文 OAI收割 ACS PHOTONICS, 2021, 卷号: 8, 期号: 10, 页码: 2912-2922 作者: Gu, Rui; Wang, Lei; Zhu, Huiping; Han, Shuangping; Bai, Yurong \| 收藏 \| 浏览/下载：38/0 \| 提交时间：2021/12/13 heavy ion irradiation hBN quantum emitters PL mapping production efficiency point defects
	Radiation effects of heavy ions on the static and dynamic characteristics of 850 nm high-speed vertical cavity surface emitting lasers 期刊论文 OAI收割 JOURNAL OF LUMINESCENCE, 2021, 卷号: 237, 页码: 7 作者: Shan, Xiaoting; Li, Bo; Zhao, Fazhan; Wang, Lei; Sun, Yun \| 收藏 \| 浏览/下载：39/0 \| 提交时间：2021/12/09 VCSEL Radiation effects Dynamic characteristics Quantum wells
	Comparison of X-Ray and Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light-Emitting Diodes 期刊论文 OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 7, 页码: 1345-1350 作者: Lei Wang ; Ningyang Liu; Bo Li ; Huiping Zhu; Xiaoting Shan; Qingxi Yuan; Xuewen Zhang; Zheng Gong; Fazhan Zhao ; Naixin Liu; Mengxin Liu; Binhong Li; Jiantou Gao; Yang Huang ; Jianqun Yang; Xingji Li; Jiajun Luo; Zhengsheng Han, and Xinyu \| 收藏 \| 浏览/下载：30/0 \| 提交时间：2021/06/28
	Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation 期刊论文 OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1503-1510 作者: Yang, L (Yang, Ling)[ 1,2 ]; Zhang, QZ (Zhang, Qingzhu)[ 1,3 ]; Huang, YB (Huang, Yunbo)[ 1,2 ]; Zheng, ZS (Zheng, Zhongshan)[ 1,2 ]; Li, B (Li, Bo)[ 1,2 ] \| 收藏 \| 浏览/下载：40/0 \| 提交时间：2018/09/18 Anneal Finfet On-state Bias Total Ionizing Dose (Tid)
	Multiple Angle Analysis of 30-MeV Silicon Ion Beam Radiation Effects on InGaN/GaN Multiple Quantum Wells Blue Light-Emitting Diodes 期刊论文 OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 11, 页码: 2784-2792 作者: Liu, Ningyang; Wang, Lei; Song LG(宋力刚); Cao XZ(曹兴忠); Wang BY(王宝义) \| 收藏 \| 浏览/下载：55/0 \| 提交时间：2019/10/11 Atom displacement carrier removal effect carrier ultrafast dynamics GaN indium localization light-emitting diodes (LEDs) nonradiative recombination centers (NRCs) positron annihilation spectroscopy (PAS) silicon ion irradiation strain relaxation
	Investigation of Threshold Ion Range for Accurate Single Event Upset Measurements in Both SOI and Bulk Technologies 期刊论文 OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2014, 卷号: 61, 页码: 1459-1467 作者: Luo, Jie; Yao, Huijun; Sun, Youmei; Xi, Kai; Geng, Chao \| 收藏 \| 浏览/下载：28/0 \| 提交时间：2018/07/05 Bragg Peak Ion Range Silicon-on-insulator Single Event Upset
	Influence of Deposited Energy in Sensitive Volume on Temperature Dependence of SEU Sensitivity in SRAM Devices 会议论文 OAI收割作者: Liu, Tianqi; Geng, Chao; Zhang, Zhangang; Zhao, Fazhan; Hou, Mingdong \| 收藏 \| 浏览/下载：38/0 \| 提交时间：2018/08/20 Single event upset temperature dependence energy deposition Monte Carlo simulation SRAM heavy ions bulk and SOI technologies
	Influence of Deposited Energy in Sensitive Volume on Temperature Dependence of SEU Sensitivity in SRAM Devices 会议论文 OAI收割作者: Liu, Jie; Sun, Youmei; Tong, Teng; Zhao, Fazhan; Zhang, Zhangang \| 收藏 \| 浏览/下载：23/0 \| 提交时间：2018/08/20 Single event upset temperature dependence energy deposition Monte Carlo simulation SRAM heavy ions bulk and SOI technologies
	Experimental study on heavy ion single event effects in SOI SRAMs 期刊论文 OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2009, 卷号: 267, 期号: 1, 页码: 83-86 作者: Li Yonghong; He Chaohui; Zhao Fazhan; Guo Tianlei; Liu Gang \| 收藏 \| 浏览/下载：31/0 \| 提交时间：2010/10/29 SOI SRAM Single event upset Single event upset rate