中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共40条,第1-10条 帮助

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Investigation of room-temperature wafer bonded GaInP/GaAs/InGaAsP triple-junction solar cells 期刊论文  OAI收割
APPLIED SURFACE SCIENCE, 2016, 卷号: 389
作者:  
Yang, WX(杨文献);  Dai, P(代盼);  Ji, L(季莲);  Tan, M;  Wu, YY(吴渊渊)
收藏  |  浏览/下载:44/0  |  提交时间:2017/03/11
Effect of thermal annealing on electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk 期刊论文  OAI收割
AIP ADVANCES, 2016, 卷号: 6, 期号: 8
作者:  
Wu, H;  Ji, L;  Harasawa, R;  Yasue, Y;  Aritake, T
收藏  |  浏览/下载:35/0  |  提交时间:2017/03/11
Room-temperature wafer bonded InGaP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all-solid state molecular beam epitaxy 期刊论文  OAI收割
APPLIED PHYSICS EXPRESS, 2016, 卷号: 9, 期号: 1
作者:  
Dai, P(代盼);  Lu, SL(陆书龙);  Uchida, SR;  Ji, L(季莲);  Wu, YY(吴渊渊)
收藏  |  浏览/下载:71/0  |  提交时间:2017/03/11
Effects of buffer layer and back-surface field on MBE-grown InGaAsP/InGaAs solar cells 期刊论文  OAI收割
JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 卷号: 55, 期号: 2
作者:  
Wu, YY;  Ji, L(季莲);  Dai, P(代盼);  Tan, M(谭明);  Lu, SL(陆书龙)
收藏  |  浏览/下载:29/0  |  提交时间:2017/03/11
Effects of Ultrathin AlAs Interfacial Layer on Photoluminescence Properties of GaInP Epilayer Grown on Ge 期刊论文  OAI收割
JOURNAL OF ELECTRONIC MATERIALS, 2016, 卷号: 45, 期号: 1
作者:  
Chen, JX(陈俊霞);  He, W;  Jia, SP;  Jiang, DS;  Lu, SL(陆书龙)
收藏  |  浏览/下载:37/0  |  提交时间:2017/03/11
Initial heteroepitaxial growth and characterization of GaAs on Ge (100) by all-solid-source molecular beam epitaxy 期刊论文  OAI收割
JOURNAL OF INFRARED AND MILLIMETER WAVES, 2016, 卷号: 35, 期号: 2
作者:  
He, W;  Lu, SL(陆书龙);  Yang, H(杨辉)
收藏  |  浏览/下载:22/0  |  提交时间:2017/03/11
Transition of radiative recombination channels from delocalized states to localized states in a GaInP alloy with partial atomic ordering: a direct optical signature of Mott transition? 期刊论文  OAI收割
NANOSCALE, 2016, 卷号: 8, 期号: 13
作者:  
Su, ZC;  Ning, JQ(宁吉强);  Deng, Z;  Wang, XH;  Xu, SJ
收藏  |  浏览/下载:27/0  |  提交时间:2017/03/11
Observation of picosecond electron spin relaxation in InGaAsP by time-resolved spin-dependent pump and probe reflection measurement 期刊论文  OAI收割
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2015, 卷号: 252, 期号: 6, 页码: 4
作者:  
Harasawa, R;  Yamamoto, N;  Wu, H(吴昊);  Aritake, T;  Lu, SL(陆书龙)
收藏  |  浏览/下载:13/0  |  提交时间:2015/12/31
Investigation of InGaAsP solar cells grown by solid-state molecular beam epitaxy 期刊论文  OAI收割
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2015, 卷号: 137, 页码: 5
作者:  
Ji, L(季莲)
收藏  |  浏览/下载:17/0  |  提交时间:2015/12/31
III-V compound semiconductor multi-junction solar cells fabricated by room-temperature wafer-bonding technique 期刊论文  OAI收割
JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 54, 期号: 5, 页码: 4
作者:  
Arimochi, M;  Watanabe, T;  Yoshida, H;  Tange, T;  Nomachi, I
收藏  |  浏览/下载:31/0  |  提交时间:2015/12/31