机构

• 物理研究所 [10]
• 半导体研究所 [10]
• 昆明动物研究所 [2]

采集方式

• OAI收割 [22]

内容类型

• 期刊论文 [22]

发表日期

• 2017 [1]
• 2016 [1]
• 2014 [2]
• 2013 [2]
• 2012 [7]
• 2011 [9]
• 更多

学科主题

• 半导体材料 [8]
• 半导体器件 [1]
• 半导体物理 [1]

筛选

浏览/检索结果: 共22条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 In vivo antimalarial activity of synthetic hepcidin against Plasmodium berghei in mice 期刊论文  OAI收割 Chinese Journal of Natural Medicines, 2017, 卷号: 15, 期号: 3, 页码: 161-167 作者:  Fang YQ;  Shen CB;  Lai R[*];  Yan XW[*];  Luan N 收藏  |  浏览/下载：30/0  |  提交时间：2017/04/17 Hepcidin  Malaria  Cytokine  Inflammation  Iron   Prokineticin 2 Plays a Pivotal Role in Psoriasis 期刊论文  OAI收割 EBioMedicine, 2016, 卷号: 13, 期号: X, 页码: 248-261 作者:  He XQ;  Shen CB;  He L;  Bei RZ;  Zheng J 收藏  |  浏览/下载：45/0  |  提交时间：2016/11/28 Angiogenesis  Cell proliferation  Inflammation  Interleukin-1  Prokineticin2  Psoriasis   Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文  OAI收割 JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 4 Luan, CB; Lin, ZJ; Lv, YJ; Zhao, JT; Wang, YT; Chen, H; Wang, ZG 收藏  |  浏览/下载：14/0  |  提交时间：2015/04/14 Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文  OAI收割 journal of applied physics, 2014, 卷号: 116, 期号: 4, 页码: 044507 Luan, CB; Lin, ZJ; Lv, YJ; Zhao, JT; Wang, YT; Chen, H; Wang, ZG 收藏  |  浏览/下载：25/0  |  提交时间：2015/03/19 Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文  OAI收割 AIP ADVANCES, 2013, 卷号: 3, 期号: 9 Yu, YX; Lin, ZJ; Luan, CB; Lv, YJ; Feng, ZH; Yang, M; Wang, YT; Chen, H 收藏  |  浏览/下载：14/0  |  提交时间：2014/01/16 Electron mobility in the linear region of an AlGaN/AlN/GaN heterostructure field-effect transistor 期刊论文  OAI收割 CHINESE PHYSICS B, 2013, 卷号: 22, 期号: 6 Yu, YX; Lin, ZJ; Luan, CB; Wang, YT; Chen, H; Wang, ZG 收藏  |  浏览/下载：36/0  |  提交时间：2014/01/16 AlGaN/AlN/GaN heterostructure field-effect transistors  quasi-two-dimensional model  the polarization Coulomb field scattering  the two-dimensional electron gas mobility   Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文  OAI收割 APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 11 Luan, CB; Lin, ZJ; Lv, YJ; Meng, LG; Yu, YX; Cao, ZF; Chen, H; Wang, ZG 收藏  |  浏览/下载：15/0  |  提交时间：2013/09/17 MOBILITY   Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes 期刊论文  OAI收割 CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 1 Cao, ZF; Lin, ZJ; Lu, YJ; Luan, CB; Yu, YX; Chen, H; Wang, ZG 收藏  |  浏览/下载：25/0  |  提交时间：2013/09/17 BREAKDOWN VOLTAGE  GAN   A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics 期刊论文  OAI收割 chinese physics b, 2012, 卷号: 21, 期号: 9, 页码: 097104 Lu YJ (Lu Yuan-Jie); Lin ZJ (Lin Zhao-Jun); Yu YX (Yu Ying-Xia); Meng LG (Meng Ling-Guo); Cao ZF (Cao Zhi-Fang); Luan CB (Luan Chong-Biao); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：20/0  |  提交时间：2013/04/02 Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文  OAI收割 nanoscale research letters, 2012, 卷号: 7, 页码: 434 Lv YJ (Lv, Yuanjie); Lin ZJ (Lin, Zhaojun); Meng LG (Meng, Lingguo); Luan CB (Luan, Chongbiao); Cao ZF (Cao, Zhifang); Yu YX (Yu, Yingxia); Feng ZH (Feng, Zhihong); Wang ZG (Wang, Zhanguo) 收藏  |  浏览/下载：24/0  |  提交时间：2013/04/02