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• 上海微系统与信息技... [10]
• 物理研究所 [1]

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• OAI收割 [11]

内容类型

• 期刊论文 [11]

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• 2012 [3]
• 2011 [8]

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• Engineerin... [2]
• Engineerin... [2]
• Physics [2]
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• Applied; P... [1]
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浏览/检索结果: 共11条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Field electron emission based on resonant tunneling in diamond/CoSi2/Si quantum well nanostructures 期刊论文  OAI收割 SCIENTIFIC REPORTS, 2012, 卷号: 2 Gu, CZ; Jiang, X; Lu, WG; Li, JJ; Mantl, S 收藏  |  浏览/下载：19/0  |  提交时间：2013/09/17 VAPOR-DEPOSITED DIAMOND  COLD CATHODES  THIN-FILMS  COSI2  MECHANISM  SURFACES  EMITTER  GROWTH   Hole Mobilities of Si/Si0.5Ge0.5 Quantum-Well Transistor on SOI and Strained SOI 期刊论文  OAI收割 IEEE ELECTRON DEVICE LETTERS, 2012, 卷号: 33, 期号: 6, 页码: 758-760 Yu, W; Zhang, B; Zhao, QT; Buca, D; Hartmann, JM; Luptak, R; Mussler, G; Fox, A; Bourdelle, KK; Wang, X; Mantl, S 收藏  |  浏览/下载：28/0  |  提交时间：2013/04/17 Hole mobility  quantum well (QW)  SiGe  strained Si (sSi)   Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source 期刊论文  OAI收割 SOLID-STATE ELECTRONICS, 2012, 卷号: 74, 页码: 97-101 Zhao, QT; Yu, WJ; Zhang, B; Schmidt, M; Richter, S; Buca, D; Hartmann, JM; Luptak, R; Fox, A; Bourdelle, KK; Mantl, S 收藏  |  浏览/下载：15/0  |  提交时间：2013/04/17 Tunnel FET  Strained Si  Subthreshold swing  SiGe   High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate 期刊论文  OAI收割 SOLID-STATE ELECTRONICS, 2011, 卷号: 62, 期号: 1, 页码: 185-188 Yu,W; Zhang,B; Zhao,QT; Hartmann,JM; Buca,D; Nichau,A; Luptak,R; Lopes,JMJ; Lenk,S; Luysberg,M; Bourdelle,KK; Wang,X; Mantl,S 收藏  |  浏览/下载：14/0  |  提交时间：2012/04/10 PERGAMON-ELSEVIER SCIENCE LTD   Improved NiSi0.8Ge0.2/Si0.8Ge 0.2 contacts by C pre-implantation 期刊论文  OAI收割 Electrochemical and Solid-State Letters, 2011, 卷号: 14, 期号: 7, 页码: H261-H263 Zhang, B; Yu, W; Zhao, QT; Buca, D; Hollnder, B; Hartmann, J.M.; Zhang, M; Wang, X; Mantl, S 收藏  |  浏览/下载：15/0  |  提交时间：2012/08/28 Thermal stability and interface improvement of thin NiSiGe by C+ ion implantation 期刊论文  OAI收割 2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011.2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011, 2011, 期号: 0 Zhang, B; Yu, W; Zhao, QT; Buca, D; Hollä; nder, B; Hartmann, J.-M.; Zhang, M; Wang, X; Mantl, S. 收藏  |  浏览/下载：14/0  |  提交时间：2012/08/28 Tunneling field-effect transistor with a strained Si channel and a Si 0.5Ge0.5 source 期刊论文  OAI收割 European Solid-State Device Research Conference.ESSDERC 2011 - Proceedings of the 41st European Solid-State Device Research Conference, 2011, 期号: 0, 页码: 251-254 Zhao, QT; Yu, WJ; Zhang, B; Schmidt, M.; Richter, S.; Buca, D.; Hartmann, J.-M.; Luptak, R.; Fox, A.; Bourdelle, K.K.; Mantl, S. 收藏  |  浏览/下载：22/0  |  提交时间：2012/08/28 Epitaxial growth of Ni(Al)Si0.7Ge0.3 on Si0.7Ge0.3/Si(100) by Al interlayer mediated epitaxy 期刊论文  OAI收割 APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 25, 页码: 252101 Zhang,B; Yu,W; Zhao,QT; Mussler,G; Jin,L; Buca,D; Hollander,B; Hartmann,JM; Zhang,M; Wang,X; Mantl,S 收藏  |  浏览/下载：10/0  |  提交时间：2012/04/10 AMER INST PHYSICS   Improved NiSi0.8Ge0.2/Si0.8Ge0.2 Contacts by C+ Pre-Implantation 期刊论文  OAI收割 ELECTROCHEMICAL AND SOLID STATE LETTERS, 2011, 卷号: 14, 期号: 7, 页码: H261-H263 Zhang,B; Yu,W; Zhao,QT; Buca,D; Hollander,B; Hartmann,JM; Zhang,M; Wang,X; Mantl,S 收藏  |  浏览/下载：22/0  |  提交时间：2012/04/10 ELECTROCHEMICAL SOC INC   High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate 期刊论文  OAI收割 SOLID-STATE ELECTRONICS, 2011, 卷号: 62, 期号: 1, 页码: 185-188 Yu, W; Zhang, B; Zhao, QT; Hartmann, JM; Buca, D; Nichau, A; Luptak, R; Lopes, JMJ; Lenk, S; Luysberg, M; Bourdelle, KK; Wang, X; Mantl, S 收藏  |  浏览/下载：9/0  |  提交时间：2013/05/10 Engineering  Physics  Physics  Electrical & Electronic  Applied  Condensed Matter