机构

• 上海微系统与信息技... [11]
• 上海技术物理研究所 [1]

采集方式

• OAI收割 [12]

内容类型

• 期刊论文 [12]

发表日期

• 2000 [2]
• 1999 [5]
• 1998 [1]
• 1996 [3]
• 1995 [1]

学科主题

• Condensed ... [2]
• Materials ... [2]
• Physics [2]
• Physics, A... [2]
• Electrical... [1]
• Engineerin... [1]
• 更多

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浏览/检索结果: 共12条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Structural and electrical characteristics of oxygen-implanted 6H-SiC 期刊论文  OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 卷号: 169, 页码: 1-5 Wang, LW; Huang, JP; Duo, XZ; Song, ZT; Lin, CL; Zetterling, CM; Ostling, M 收藏  |  浏览/下载：21/0  |  提交时间：2012/03/24 ENHANCED THERMAL-OXIDATION  SILICON-CARBIDE  ION-IMPLANTATION  AMORPHIZATION  LAYERS   Investigation of damage behaviour and isolation effect of n-type 6H-SiC by implantation of oxygen 期刊论文  OAI收割 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2000, 卷号: 33, 期号: 12, 页码: 1551-1555 Wang, LW; Huang, JP; Duo, XZ; Song, ZT; Lin, CL; Zetterling, CM; Ostling, M 收藏  |  浏览/下载：16/0  |  提交时间：2012/03/24 ENHANCED THERMAL-OXIDATION  ION-IMPLANTATION  SILICON-CARBIDE  AMORPHIZATION  LAYERS   Effect of annealing on SiC thin films prepared by pulsed laser deposition 期刊论文  OAI收割 DIAMOND AND RELATED MATERIALS, 1999, 卷号: 8, 期号: 12, 页码: 2099-2102 Huang, JP; Wang, LW; Wen, J; Wang, YX; Lin, CL; Ostling, M 收藏  |  浏览/下载：31/0  |  提交时间：2012/03/25 CHEMICAL-VAPOR-DEPOSITION  CUBIC SILICON-CARBIDE  EPITAXIAL-GROWTH  TEMPERATURE  ABLATION  DEVICES   Growth of SiC thin films on (100) and (111) silicon by pulsed laser deposition combined with a vacuum annealing process 期刊论文  OAI收割 WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999, 1999, 卷号: 572, 页码: 207-212 Huang, JP; Wang, LW; Wen, U; Wang, YX; Lin, CL; Zetterling, CM; Ostling, M 收藏  |  浏览/下载：18/0  |  提交时间：2012/03/25 CHEMICAL-VAPOR-DEPOSITION  CARBIDE  TEMPERATURE  DEVICES   Preparation of AlN thin films by nitridation of Al-coated Si substrate 期刊论文  OAI收割 THIN SOLID FILMS, 1999, 卷号: 340, 期号: 1-2, 页码: 137-139 Huang, JP; Wang, LW; Shen, QW; Lin, CL; Ostling, M 收藏  |  浏览/下载：8/0  |  提交时间：2012/03/25 CHEMICAL-VAPOR-DEPOSITION  PULSED-LASER DEPOSITION  GROWTH   A study of optical characteristics of damage in oxygen-implanted 6H-SiC 期刊论文  OAI收割 JOURNAL OF MATERIALS SCIENCE LETTERS, 1999, 卷号: 18, 期号: 12, 页码: 979-982 Wang,LW; Huang,JP; Lin,CL; Zou,SC; Zheng,YX; Wang,XJ; Huang,DM; Zetterling,CM; Ostling,M 收藏  |  浏览/下载：28/0  |  提交时间：2012/03/25 ENHANCED THERMAL-OXIDATION  SILICON-CARBIDE  ION-IMPLANTATION  THIN-FILMS  AMORPHIZATION  LAYERS   Structural and electrical characterization of AlN thin films obtained by nitridation of Al/Si substrate 期刊论文  OAI收割 JOURNAL OF ELECTRONIC MATERIALS, 1999, 卷号: 28, 期号: 3, 页码: 225-227 Huang, JP; Wang, LW; Shen, QW; Lin, CL; Ostling, M 收藏  |  浏览/下载：16/0  |  提交时间：2012/03/25 PULSED-LASER DEPOSITION   Influence of the addition of Co and Ni on the formation of epitaxial semiconducting beta-FeSi2: Comparison of different evaporation methods 期刊论文  OAI收割 JOURNAL OF APPLIED PHYSICS, 1998, 卷号: 83, 期号: 8, 页码: 4193-4201 Mangelinck, D; Wang, L; Lin, C; Gas, P; Grahn, J; Ostling, M 收藏  |  浏览/下载：15/0  |  提交时间：2012/03/25 ION-BEAM SYNTHESIS  SOLID-PHASE EPITAXY  THIN-FILM FORMATION  OPTICAL-PROPERTIES  IRON SILICIDES  ELECTRONIC-STRUCTURE  SILICON  COBALT  GROWTH  IMPLANTATION   A clarification of optical transition of beta-FeSi2 film 期刊论文  OAI收割 SOLID STATE COMMUNICATIONS, 1996, 卷号: 97, 期号: 5, 页码: 385-388 作者:  Wang LW;  Lin CL;  Chen XD;  Zou SC;  Qin LH   |  收藏  |  浏览/下载：8/0  |  提交时间：2012/11/21 Optimal transitions in beta-FeSi2 films 期刊论文  OAI收割 PHYSICAL REVIEW B, 1996, 卷号: 54, 期号: 16, 页码: 11126-11128 Wang,LW; Ostling,M; Yang,K; Qin,LH; Lin,CL; Chen,XD; Zou,SC; Zheng,YX; Qian,YH 收藏  |  浏览/下载：15/0  |  提交时间：2012/03/25 IRON DISILICIDE  BAND  FESI2