中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共22条,第1-10条 帮助

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Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition 期刊论文  OAI收割
journal of crystal growth, 2008, 卷号: 310, 期号: 24, 页码: 5266-5269
作者:  
Yang H;  Zhao DG;  Zhu JJ;  Yang H;  Zhang SM
收藏  |  浏览/下载:189/43  |  提交时间:2010/03/08
Correlation between optical and structural properties of (Al,Ga)N layers grown by MOCVD 期刊论文  OAI收割
physica status solidi a-applications and materials science, 2007, 卷号: 204, 期号: 1, 页码: 294-298
Jahn U (Jahn Uwe); Jiang DS (Jiang De-Sheng); Ploog KH (Ploog Klaus H.); Wang XL (Wang Xiaolan); Zhao DG (Zha0 Degang); Yang H (Yang, Hui)
收藏  |  浏览/下载:35/0  |  提交时间:2010/03/29
Measurement of threading dislocation densities in GaN by wet chemical etching 期刊论文  OAI收割
semiconductor science and technology, 2006, 卷号: 21, 期号: 9, 页码: 1229-1235
作者:  
Yang H;  Zhu JJ;  Yang H;  Wang H;  Wang H
收藏  |  浏览/下载:53/0  |  提交时间:2010/04/11
Spatial distribution of deep level defects in crack-free AlGaN grown on GaN with a high-temperature AlN interlayer 期刊论文  OAI收割
journal of applied physics, 2006, 卷号: 100, 期号: 12, 页码: art.no.123101
Sun, Q (Sun, Q.); Wang, H (Wang, H.); Jiang, DS (Jiang, D. S.); Jin, RQ (Jin, R. Q.); Huang, Y (Huang, Y.); Zhang, SM (Zhang, S. M.); Yang, H (Yang, H.); Jahn, U (Jahn, U.); Ploog, KH (Ploog, K. H.)
收藏  |  浏览/下载:43/0  |  提交时间:2010/03/29
Lateral phase separation in algan grown on gan with a high-temperature ain interlayer 期刊论文  iSwitch采集
Applied physics letters, 2005, 卷号: 87, 期号: 12, 页码: 3
作者:  
Sun, Q;  Huang, Y;  Wang, H;  Chen, J;  Jin, RQ
收藏  |  浏览/下载:19/0  |  提交时间:2019/05/12
Lateral phase separation in AlGaN grown on GaN with a high-temperature AIN interlayer 期刊论文  OAI收割
applied physics letters, 2005, 卷号: 87, 期号: 12, 页码: art.no.121914
作者:  
Yang H;  Yang H;  Wang H;  Jiang DS;  Zhang SM
收藏  |  浏览/下载:119/19  |  提交时间:2010/03/17
Investigations on v-defects in quaternary alingan epilayers 期刊论文  iSwitch采集
Applied physics letters, 2004, 卷号: 84, 期号: 26, 页码: 5449-5451
作者:  
Liu, JP;  Wang, YT;  Yang, H;  Jiang, DS;  Jahn, U
收藏  |  浏览/下载:12/0  |  提交时间:2019/05/12
Nonradiative recombination centers in ga(as,n) and their annealing behavior studied by raman spectroscopy 期刊论文  iSwitch采集
Applied physics letters, 2004, 卷号: 84, 期号: 11, 页码: 1859-1861
作者:  
Ramsteiner, M;  Jiang, DS;  Harris, JS;  Ploog, KH
收藏  |  浏览/下载:32/0  |  提交时间:2019/05/12
Nonradiative recombination centers in Ga(As,N) and their annealing behavior studied by Raman spectroscopy 期刊论文  OAI收割
applied physics letters, 2004, 卷号: 84, 期号: 11, 页码: 1859-1861
作者:  
Jiang DS
收藏  |  浏览/下载:87/29  |  提交时间:2010/03/09
Investigations on V-defects in quaternary AlInGaN epilayers 期刊论文  OAI收割
applied physics letters, 2004, 卷号: 84, 期号: 26, 页码: 5449-5451
作者:  
Yang H;  Yang H;  Wang YT;  Jiang DS
收藏  |  浏览/下载:405/176  |  提交时间:2010/03/09