机构

• 上海光学精密机械研究... [8]
• 近代物理研究所 [8]

采集方式

• OAI收割 [16]

内容类型

• 期刊论文 [16]

发表日期

• 2020 [3]
• 2019 [4]
• 2018 [1]
• 2016 [1]
• 2015 [2]
• 2014 [2]
• 更多

学科主题

筛选

浏览/检索结果: 共16条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 An investigation of FinFET single-event latch-up characteristic and mitigation method 期刊论文  OAI收割 MICROELECTRONICS RELIABILITY, 2020, 卷号: 114, 页码: 8 作者:  Li, Dongqing;  Liu, Tianqi;  Wu, Zhenyu;  Cai, Chang;  Zhao, Peixiong   |  收藏  |  浏览/下载：29/0  |  提交时间：2021/12/13 TCAD  FinFET  SCR  SEL   Evaluation Method of Heavy-Ion-Induced Single-Event Upset in 3D-Stacked SRAMs 期刊论文  OAI收割 ELECTRONICS, 2020, 卷号: 9, 期号: 8, 页码: 14 作者:  Zhao, Peixiong;  Liu, Tianqi;  Cai, Chang;  He, Ze;  Li, Dongqing   |  收藏  |  浏览/下载：24/0  |  提交时间：2021/12/15 Monte-Carlo simulation  single-event upset  test standard  three-dimensional integrated circuits  ultrahigh-energy heavy ion   Multiple Layout-Hardening Comparison of SEU-Mitigated Filp-Flops in 22-nm UTBB FD-SOI Technology 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 1, 页码: 374-381 作者:  Cai, Chang;  Liu, Tianqi;  Zhao, Peixiong;  Fan, Xue;  Huang, Hongyang   |  收藏  |  浏览/下载：30/0  |  提交时间：2022/01/19 D filp-flops (DFFs)  heavy ions  radiation hardening  single-event upsets (SEUs)  ultrathin body and buried oxide fully depleted silicon on insulator (UTBB FDSOI)   SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA 期刊论文  OAI收割 ELECTRONICS, 2019, 卷号: 8, 期号: 12, 页码: 12 作者:  Cai, Chang;  Gao, Shuai;  Zhao, Peixiong;  Yu, Jian;  Zhao, Kai   |  收藏  |  浏览/下载：34/0  |  提交时间：2022/01/19 field-programmable gate arrays  embedded block memory  single event  fault tolerance  radiation effect   Effects of total ionizing dose on single event effect sensitivity of FRAMs 期刊论文  OAI收割 MICROELECTRONICS RELIABILITY, 2019, 卷号: 95, 页码: 1-7 作者:  Ji, Qinggang;  Liu, Jie;  Li, Dongqing;  Liu, Tianqi;  Ye, Bing   |  收藏  |  浏览/下载：56/0  |  提交时间：2019/11/10 Ferroelectric random access memory  Total ionizing dose  Single event effect  TCAD simulation   Heavy-Ion Induced Single Event Upsets in Advanced 65 nm Radiation Hardened FPGAs 期刊论文  OAI收割 ELECTRONICS, 2019, 卷号: 8, 期号: 3, 页码: 13 作者:  Ke, Lingyun;  Zhao, Peixiong;  Liu, Jie;  Fan, Xue;  Cai, Chang   |  收藏  |  浏览/下载：115/0  |  提交时间：2019/11/10 FPGA  radiation hardening  single event upsets  heavy ions  error rates   Anomalous annealing of floating gate errors due to heavy ion irradiation 期刊论文  OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2018, 卷号: 418, 页码: 80-86 作者:  Hou, Mingdong;  Zhao, Peixiong;  Luo, Jie;  Ji, Qinggang;  Ye, Bing   |  收藏  |  浏览/下载：67/0  |  提交时间：2018/05/31 Annealing  Flash memories  Heavy ions  Multiple cell upsets  Radiation effects   1.31 and 1.32 mu m dual-wavelength Nd:LuLiF4 laser 期刊论文  OAI收割 Opt. Laser Technol., 2016, 卷号: 81, 页码: 14 作者:  Zhang, Peixiong;  Li, Shixia;  Li, Tao;  Zhao, Shengzhi;  Li, Guiqiu 收藏  |  浏览/下载：21/0  |  提交时间：2017/12/25 Integratable pulsed 2-mu m laser with Tm,Mg:LiNbO3 crystal and single-walled carbon nanotube saturable absorber 期刊论文  OAI收割 opt. laser technol., 2015, 卷号: 65, 页码: 36 作者:  Zhang, Shuaiyi;  Li, Hongqiang;  Zhao, Qiuling;  Lv, Hao;  Wang, Xia 收藏  |  浏览/下载：46/0  |  提交时间：2016/11/28