中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
采集方式
内容类型
发表日期
学科主题
筛选

浏览/检索结果: 共7条,第1-7条 帮助

条数/页: 排序方式:
The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates 期刊论文  OAI收割
CHINESE PHYSICS B, 2009, 卷号: 18, 期号: 10, 页码: 4413-4417
作者:  
Zhang SM;  Yang H(杨辉);  Zhang SM
收藏  |  浏览/下载:22/0  |  提交时间:2010/01/15
The effect of growth temperature on structural quality of GaN/AlN quantum wells by metal-organic chemical vapour deposition 期刊论文  OAI收割
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 10, 页码: art. no. 105106
Ma, ZF; Zhao, DG; Wang, YT; Jiang, DS; Zhang, SM; Zhu, JJ; Liu, ZS; Sun, BJ; Yang, H; Liang, JW
收藏  |  浏览/下载:60/3  |  提交时间:2010/03/08
Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition 期刊论文  OAI收割
journal of crystal growth, 2006, 卷号: 289, 期号: 1, 页码: 72-75
作者:  
Jiang DS;  Li XY;  Zhu JJ;  Yang H;  Zhao DG
收藏  |  浏览/下载:108/0  |  提交时间:2010/04/11
Quasi-thermodynamic analysis of movpe of algan 期刊论文  iSwitch采集
Journal of crystal growth, 2000, 卷号: 208, 期号: 1-4, 页码: 73-78
作者:  
Lu, DC;  Duan, S
收藏  |  浏览/下载:9/0  |  提交时间:2019/05/12
Quasi-thermodynamic analysis of MOVPE of AlGaN 期刊论文  OAI收割
journal of crystal growth, 2000, 卷号: 208, 期号: 1-4, 页码: 73-78
Lu DC; Duan S
收藏  |  浏览/下载:52/0  |  提交时间:2010/08/12
Scanning electron microscope studies of cubic alxga1-xn films grown on gaas(100) by metal organic vapor phase epitaxy (movpe) 期刊论文  iSwitch采集
Journal of crystal growth, 1999, 卷号: 203, 期号: 1-2, 页码: 40-44
作者:  
Xu, DP;  Yang, H;  Zhao, DG;  Li, JB;  Zheng, LX
收藏  |  浏览/下载:18/0  |  提交时间:2019/05/12
Algan  Cubic  Hexagonal  Sem  Movpe  
Scanning electron microscope studies of cubic AlxGa1-xN films grown on GaAs(100) by metal organic vapor phase epitaxy (MOVPE) 期刊论文  OAI收割
journal of crystal growth, 1999, 卷号: 203, 期号: 1-2, 页码: 40-44
作者:  
Zhao DG
收藏  |  浏览/下载:44/0  |  提交时间:2010/08/12
AlGaN  cubic  hexagonal  SEM  MOVPE  GAAS  GAN